Radiation-hard organic electronics with fullerene-based semiconductors
Abstract
We demonstrate an exceptional radiation hardness of thin films of pristine fullerene C60 and its organic derivative phenyl-C61-butyric acid methyl ester (PC61BM) in lateral resistor and field-effect transistor device geometries under exposure to ultra-high doses of 60Co gamma rays approaching 5–8 MGy (5–8 MRad). The obtained results exhibit the great promise of organic semiconductors for the development of radiation-hard electronics for outer space exploration and other extreme environments.

Please wait while we load your content...