Open Access Article
Mathias
van der Veer
ab,
Nick
Daems
a,
Pegie
Cool
b and
Tom
Breugelmans
*a
aApplied Electrochemistry and Catalysis (ELCAT), University of Antwerp, Campus Drie Eiken, Universiteitsplein 1, 2610, Wilrijk, Belgium. E-mail: Tom.breugelmans@uantwerpen.be
bLaboratory of Adsorption and Catalysis (LADCA), University of Antwerp, Campus Drie Eiken, Universiteitsplein 1, 2610, Wilrijk, Belgium
First published on 15th October 2025
Thin-film-based catalysts, fabricated through physical vapor deposition, have attracted significant interest as promising materials for electrochemical CO2 reduction. In this context, metallic Cu films function as active catalyst layers for the reduction to ethylene and ethanol. However, these films still experience high overpotentials, resulting in low energy efficiencies. In this study, we have fabricated Cu1−xNx films to overcome this issue by incorporating nitrogen into the sputtering process, leading to the formation of an anti-ReO3 crystal structure of Cu3N, which contains interstitial vacancies filled with Cu atoms. Under optimal sputtering conditions of rN2 = 0.50, sputter rate = 4 Å s−1, and pressure = 6 μbar, EDX analysis reveals a sub-stoichiometric thin-film composed of Cu0.84N0.16. In the electrochemical CO2 reduction, this film resulted in an increase in energy efficiency from 15.8% to 20% for ethylene compared to pure Cu films, which was attributed to a decrease in the measured potential by ± 500 mV, due to the addition of nitrogen in the structure. This key finding suggests that for future applications, Cu1−xNx layers should be employed instead of metallic Cu to reduce the required energy demands while maintaining selectivity.
Broader contextAs the field of CO2 capture and utilization is increasing, many believe that the electrochemical CO2 reduction holds a future as a large-scale industrial application of efficiently using CO2 as a feedstock to produce valuable chemicals such as CO, Formic acid, Ethylene, and Ethanol. Driven by renewable electricity, efficient catalysts are needed. In literature, metallic Cu films are widely used to study large-scale operation of CO2 reduction. However, we note that Cu3N films, synthesized by adding N2 to the sputter process, are more efficient catalysts and reduce the energy requirements. Especially since the formation of Ethylene and Ethanol require 12 e− per mole, the energy demands are quite high. Therefore, reducing overpotentials is a key area that is sometimes overlooked. Herein, we highlight an increase of 25% in energy efficiency and a 20% increase in mass activity by simply changing the cathode material to Cu3N. Furthermore, initial stability was also improved, due to the strong presence of N3−, which maintains the presence of Cu+, and thus reduces catalysts reconstructions that can be detrimental to the operational process. These reasons led us to believe that future research should be conducted with Cu3N films. |
000 h), and high production rates to make it commercially viable and competitive with more traditional fossil fuel based routes. Among the wide variety of CO2 products, C2+ products are more desirable than C1 due to their high energy density and commercial value.2 However, the reaction to ethylene and ethanol is challenging due to the multiple proton-coupled electron transfers required, resulting in diverse reaction pathways and, thus in most cases, a poor selectivity.3–6
Cu-based catalysts, such as Cu7/Cu2O8–10 or Cu–M (M = Ag,11–13 Pd,14 Zn,15 Bi16) are known to synthesize C2+ products albeit with high energy input, relatively poor stability, and low selectivity towards a single product. Recently, a flow cell design has been reported for the conversion of CO2 to ethylene, with a FE reaching up to 70%, and a remarkable stability of 150 h, nevertheless this was only achieved with highly corrosive alkaline electrolytes (>7 M KOH).17 As a result, tuning Cu-catalysts for more efficient production of a single multi-carbon product at less demanding conditions remains of paramount importance to advance the field. In this regard, Cu3N catalysts are promising as the limited research into them has shown higher ethylene efficiencies but so far only in H-cell conditions and thus at low current densities. For instance, a study conducted by Yin et al., synthesized Cu3N nanocubes through wet chemical synthesis as electrocatalysts for CO2 to ethylene with a reported FE of 60%.18 Similarly, Wang et al. synthesized Cu3N nanoparticles enclosed with (100) and (111) facets, which operated at a high FE of 61%.19 Finally, Cu3N-derived Cu nanowires proposed by Mi et al. showed a total C2+ of 86% with ethylene being the main product at 66%, and a high stability of 28 h.20 From these results, it is clear that Cu3N has a catalytic capability towards ethylene, with a more narrow product selectivity than typical Cu/Cu2O catalysts but they need to be evaluated under the more industrially relevant conditions of a flow cell and high current densities.8,9,10,21,22 The main challenge with Cu-based catalysts is the in situ reduction of the active Cu+ species, which leads to surface reconstructions and subsequent loss of activity.2,21 Sargent et al. suggested that Cu3N could prolong the stability of the copper(I) species, which are known to aid in decreasing energy barriers for *CO adsorption and subsequent C–C coupling.22 Moreover, the above mentioned catalyst designs are often complex and require specific chemicals that may be toxic or costly, which also limits their scalability. For this reason, other ways to synthesize these Cu3N materials are required if they are to replace the typical CuOx catalysts also in flow electrolyzers.
In this respect, a promising route towards the preparation of stable Cu1−xNx films on which abundant research has been performed is the physico-chemical fabrication approach including methods such as atomic layer deposition,23 reactive radio-frequency sputtering,24 and direct current magnetron sputtering,25 resulting in the application of this metastable semiconductor Cu3N in various fields such as photovoltaics,26 optical storage devices,23 H2 gas sensing,27 and tunnel junctions28 but as of yet Cu3N-based films prepared by this approach have not found their way to eCO2R. As a non-toxic, and earth-abundant material, it can nevertheless be a viable alternative to other toxic materials. Direct current (DC) sputtering stands out as it provides high scalability, improved homogeneity, controllable thickness and crystallinity.
In this study, we have fabricated Cu-based thin films with reactive sputtering, by adding nitrogen to the argon flow, resulting in the formation of Cu1−xNx sub stoichiometric layers. By controlling different operational parameters such as N2/Ar gas fraction (rN2), deposition pressure (P), and sputter rate (Å s−1), we found an optimal sub-stoichiometric layer of Cu0.84N0.16 for the eCO2R to increase the energy efficiency towards ethylene compared to typical metallic Cu thin film. We have thus proven that the implementation of nitrogen in traditional Cu-based thin films can significantly decrease the energy consumption, which is an important discovery, especially for future up scaling research.
A gradual increase in rN2 lowered the total Cu deposition. Because N is a lighter atom than Ar, it has a lower intrinsic kinetic energy, and thus, it yields a slower material transfer rate.23,24,29,30 However, during DC magnetron sputtering, the reactive gas (N2) can be implemented into the subsurface region of the Cu target. Nitrogen can remain as non – reactive ions in the target or form an insulating layer, this results in an increase in power and a decrease of the target erosion rate.31 In other words, the bombardment of the Cu target was less effective, resulting in decreased deposition rates.
Next, an increase in sputter pressure also results in reduced deposition, as evidenced by the lower Cu loadings. This was explained as follows in a study by Figueira et al.,29 as the atoms in the plasma undergo an increased number of collisions, the mean free path and thus the chances of reaching the target are reduced, along with more target poisoning due to an increase of nitrogen during sputtering, as such decreasing the total deposition.32
Finally, a higher initial sputtering rate results in more power being applied during operation (see Table S1); and therefore, more localized target heating occurs, which increases the kinetic energy of the Cu atoms, leading to more evaporation.33 Furthermore, a more efficient cleaning of the target also occurs, which helps in reducing the target poisoning. Ultimately, both results in a higher loading.
To identify the crystalline phases, the XRD patterns of the different films were obtained. A distinct peak in all samples was identified at 28° corresponding to the carbon substrate, which is henceforth labelled ‘C’. The peak potential value has been restricted to increase sensitivity of the important peaks. To identify the remaining peaks, reference patterns for Cu3N (JCPDS File No. 47-1088) and Cu (JCPDS File No. 04-0836) were used. Fig. 1 presents the XRD patterns for all prepared samples. In Fig. 1A, the influence of rN2 is evident. For rN2 = 0, diffraction peaks corresponding to metallic Cu appear at 43° (111), 50° (200), and 53° (210), while no Cu3N peaks are observed. Upon increasing the rN2 factor, characteristic Cu3N peaks emerge at 23° (100), 41° (111), 47° (200), and 54° (210). Simultaneously, the Cu peaks gradually shift toward those of Cu3N, reflecting the growth of Cu3N domains.24,25,30 Nevertheless, residual Cu remain detectable, likely due to the formation of sub-stoichiometric layers in which Cu may exist as interstitial atoms or separate Cu domains. Furthermore, SEM–EDX images (Fig. S2) revealed that an increase in rN2 caused the particles to change from distinct spherical particles to more stacked agglomerated platelets, with sharp edges.24 EDX subsequently determined the percentage of N present in the sample, for increasing r value, this was respectively, 0–13–16–21% (Table S1).
Next, the influence of sputter pressure was investigated in Fig. 1B. The effect of sputter pressure on the crystallinity has been well reported in the literature:34–37 a low pressure (<6 μbar) results in grains that grow along the Cu111 plane,37 which favors creation of more sub-stoichiometric layers due to a low reactive character of the sputtering process.
A higher operating pressure (15 μbar) will shorten the mean free path, and more atomic collisions will thus occur. As a consequence, the kinetic energy of the Cu species arriving at the substrate will be lower than at lower pressures (6 μbar). The Cu ions with lower energy will be deposited with a more amorphous character, as they lack energy to organize in ordered structures. Upon increasing the pressure, the Cu3N peaks that are visible at 6 μbar are less intense and shifted towards metallic Cu peaks, evident of a more amorphous layer growth.24,32,38 The Cu thus deposits with lower energy on the substrate further inducing defects and yielding a deteriorated crystallinity. SEM images in Fig. S3, show that an increase in deposition pressure results in the particles becoming more stacked and agglomerated, as was observed in previous literature.36,38 In this regime, higher diffusion rate and atom mobility result in a more densely stacked surface.
Next, we compared the different sputter rates in Fig. 1C, the crystallinity of the characteristic Cu3N peaks are similar with varying sputter rate. A higher rate will result in more material deposited on the carbon substrate, as evidenced by the ICP–MS result on Cu loading (Table S1), consequently, the intensity of the Cu3N peaks increase. Furthermore, SEM images (Fig. S4) reveal an increase in mean average size was detected from 394 nm ± 47 nm for 1 Å s−1 to 516 nm ± 35 nm for 10 Å s−1. This can be attributed to a faster growth rate and less nucleation under the latter conditions.32
Next, contact angles were measured on the Cu1−xNx coated GDLs for each sample. Table 1 (Fig. S5–S7, for pictures) shows that the contact angle lowers with rN2, as the nitrogen content increases, Cu3N has a higher contribution, which is intrinsically more hydrophilic than Cu, due to its higher polarity. A higher P makes the surface more amorphous as evidenced by XRD, which will reduce the contact angle further. Finally, a lower SR results in reduced Cu loadings; therefore, exposing more of the hydrophobic carbon-based GDL to the water droplet as such yielding a higher contact angle for the lowest SR of 1 Å s−1.
| Sample | Contact angle (°) |
|---|---|
| r = 0 | 106.16 |
| r = 0.25 | 85.4 |
| r = 0.5 | 86.6 |
| r = 0.75 | 63.1 |
| P = 6 | 86.6 |
| P = 10.5 | 57.5 |
| P = 15 | 47.7 |
| SR = 1 | 102.4 |
| SR = 4 | 86.6 |
| SR = 7 | 74.3 |
| SR = 10 | 65.2 |
Next, the pressure (Fig. 2C and D) had a more profound effect on C2+ selectivity as it dropped from 72% to around 65% upon increasing the pressure above 6 μbar, with a significant increase in the production of HCOO− as a consequence (up to 16% for P = 15 μbar). This may be explained by the agglomerated particles that form at these higher P. Since, they have a higher coordination number, they can be expected to be less active for C2+ as they have lower surface energies.44 Additionally, the measured potential for P = 15 μbar fluctuated more and reached values as high as −2.1 V vs. RHE, compared to −1.4 V for P = 6 μbar, indicating that stability and activity suffered as well upon increasing the pressure. The significant decrease in contact angle for high pressure (from 86° to 47°) alters the surface tension of water so that molecules can penetrate more easily, enhancing the HER, this seems to be most outspoken when increasing the pressure.45
When increasing the SR (1–4–7–10 Å s−1), only a small impact on the C2+ formation (67–72–70–66%) was observed, highlighted by the simultaneous increase in C1 and HER (10%) (Fig. 2E/F). A higher SR (>4 Å s−1) showed a steady increase in CO and HER, while the potential increased to −1.5 V vs. RHE for SR = 7 Å s−1, and −1.7 V vs. RHE for SR = 10 Å s−1. At these higher SR, the particles are more amorphous, making them less active. The lowest SR of 1 Å s−1 nevertheless had the highest potential (−2.7 V vs. Ag/AgCl), and a possible explanation is the low amount of deposited catalyst rendering less active sites enabling HER and inhibiting C–C coupling.
The Cu1−xNx films prepared by magnetron sputtering clearly provide promising performance as electrocatalysts for CO2 reduction. To further explain the improvement in activity (i.e., higher EE) from pure Cu, we estimated the electrochemical active surface area (EASA) of all the samples by determining the double layer capacitance (Cdl) (Fig. S8 & Table S3). From the summarized results in Table S3, it can be concluded that the optimal sample (rN2 = 0.5; SR = 4 Å s−1; P = 6 μbar) possesses the highest EASA value of 4.08 mF (as it is an indication of roughness), and thus is most active towards eCO2R which explains why it reaches the highest EE value. A general trend among all catalysts is found that for higher Cdl values, improved energy efficiencies are observed. This observation suggests that the limited differences between the nitrogen containing samples are driven by their difference in the calculated active surface area (EASA). For instance, the extrapolated Cdl for rN2 = 0.50 has the highest value at 4.08 mF, compared to 3.8 mF for rN2 = 0.75, resulting in minor cEE differences between these two samples.
The (non-iR corrected) cathodic EE was then calculated for all samples for ethylene and ethanol, the two major products, and summarized in Table S3. Clearly, a maximum EEC2H4 of 20% is reached for the sample configuration of rN2 = 0.5, SR = 4 Å s−1, and an operational pressure of 6 μbar. Furthermore, the partial mass activity (mA mg−1) for ethylene was calculated (Figu. S9), and a clear improvement from 193.2 mA mg−1 to 230.2 mA mg−1 was observed from pure Cu to Cu0.84N0.16 (rN2 = 0.5). This clearly highlights the advantage and novelty of using Cu1−xNx film as a more efficient electrocatalyst when compared to the more commonly used Cu film, as the EE and mass activity improved significantly. In Table S2, a summary of recent Cu-based catalysts for C2+ production is given. Without iR correction, our material either equals or outperforms several other reported studies in terms of EE, however, if iR contribution is applied, a total EEC2H4 of 28% is found, further showing that our material is better than most previously reported Cu nitride based materials (Table S2). Furthermore, although the FEs might be comparable, emphasis on the high mass activity (due to low Cu loading) for ethylene is highlighted. In most cases, a higher mass activity is observed due to the sputtering fabrication method requiring low Cu loadings (<1 mg cm−2). Magnetron sputtering thus allows for facile tuning of properties, whilst providing a rapid, uniform, and scalable fabrication strategy (up to ± 1 m2) making this an optimal alternative for traditional, and complex synthesis methods even though they sometimes slightly outperform in terms of performance. For instance, Cu3N-derived Cu nanowires (NWs) exhibit superior performance compared to our sample, achieving an FEC2H4 of 66% and an EEC2H4 of 35% albeit at lower current densities in a H-cell.20 Nevertheless, the synthesis procedure entails the production of Cu(OH)2 NWs, followed by nitridation in a tube furnace, and ultimately, partial electrochemical reduction to Cu NWs. Evidently, this method involves a complex fabrication process that poses challenges for scaling to quantities relevant for industrial applications.
To conclude, the higher EE with Cu1−xNx as opposed to metallic Cu can be explained as follows. First, the distinct anti-ReO3 crystal structure that yields interstitial sites filled with Cu (as highlighted by the EDX) and Cu domains, increases the conductivity and stability of Cu+ due to the presence of residual nitrogen (as supported by ex situ XRD analysis). Secondly, the greater interatomic distances (3.817 > 3.615 Å)23 between Cu–Cu atoms can help in stabilizing certain intermediates by reducing the energy barrier and facilitating better adsorption and improved cell potentials. Finally, the significant charge density of N3− contributes in maintaining the more active Cu+ species, further contributing to the increased cEE.
Finally, we investigated the initial stability of the optimal Cu1−xNx films (for rN2 = 0.50, SR = 4 Å s−1 and P = 6 μbar) and compared it to pure Cu. From Fig. 3A, similar potential trends are seen over the course of the experiment, as before, with rN2 = 0.50 a higher energy efficiency was reached due to a difference of ± 600 mV in the measured working potential. With respect to the ethylene efficiency over time (Fig. 3B), rN2 = 0.50 clearly achieves improved stability as the ethylene is still at 20% after 4 hours, whereas, for pure Cu the ethylene FE has dropped to zero. Therefore, it seems that Cu0.84N0.16 can retain higher production rates over extended duration and we believe this is due to the more defined crystal structure. During operation, sputtered metallic Cu reorganize into channel-like structures that allow enhanced water penetration.13 A similar mechanism occurs with rN2 = 0.50, however, the initial nitrogen incorporation likely influences activation by stabilizing Cu+, similar to the case of oxide-derived Cu.
Chronoamperometry at −0.5 V vs. Ag/AgCl (the potential at which Cu+ reduces) was run until the current reached approximately zero (in 1 M K2SO4). After integrating the resulting curves (Fig. S10), we can calculate the amount of charge (C) required for reduction (when current reaches zero), which is significantly higher for rN2 = 0.50 (at 62.67 mC) than for Cu (38.5 mC), indicating prolonged Cu+ retention, furthermore, the XRD (Fig. S11) of the spent sample shows some Cu3N peaks, proving the presence of residual nitrogen which helps in stabilizing the catalyst. Although these initials experiments indicate another advantage of utilizing Cu0.84N0.16, stability is not solely related to the catalyst, but also to the system. Controlling the differential pressure46 to limit flooding effects, operating under pulsations to counteract surface reconstructions,21 flow cell setup,47 and substrates effects such as a pure PTFE substrate that hinders salt precipitation,48 are all determining factors that heavily impact stability, which is not the main aim of this work and also the reason why longer testing was not performed. The main aim is to point out the benefits of utilizing nitrogen during reactive sputtering over pure Cu as electrocatalyst for the CO2 reduction reaction.
In this study, we have proven that the application of sputtered Cu1−xNx films can be expanded to the field of CO2 electrolysis, whilst accomplishing similar FEs, the energy input can be significantly improved compared to typical pure Cu films. As previously mentioned, the increase in the mass activity due to relatively low Cu loadings (<400 μg cm−2) is another advantage of this cost – effective and scalable alternative. Therefore, we believe that Cu1−xNx thin films have potential to be used as promising catalysts for the CO2 reduction reaction, especially given there is still a lot of room for improvement of this system both in terms of efficiency and of stability.
Supplementary information: detailed experimental methods; summary of deposition conditions, ICP-MS results, EDX results; literature review of various Cu-based catalysts; view of the flow cell; SEM images of Cu1−xNx films prepared with different rN2 ratios; SEM images of Cu1−xNx films prepared with different operational sputter pressure; SEM images of Cu1−xNx films prepared with different sputter rates; contact angles of Cu1−xNx films prepared with different rN2 ratios; contact angle of Cu1−xNx films prepared with different operational pressure; contact angle of Cu1−xNx films prepared with different sputter rate; cyclic voltammograms and the resulting linear fit for calculation of EASA data for all used Cu1−xNx films; summary of our results with EE and Cdl; summary of partial mass activity; chronoamperometry with rN2 = 0, and rN2 = 0.50 at −0.5 V vs. Ag/AgCl; XRD pattern of rN2 sample after electrolysis. See DOI: https://doi.org/10.1039/d5ey00246j.
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