Open Access Article
Nazlıcan Şahin Sütcü
*a,
Pelin Kavakb,
Ayşenur Corcor Özbaya,
İrem Topalc,
Neşe Güngöra,
Emrah Çakmakçı
c,
Kadir Esmera,
Caner Değer
a,
İlhan Yavuz
a and
Mustafa Alevli*a
aPhysics Department, Marmara University, Istanbul, 34722, Turkey. E-mail: mustafaalevli@marmara.edu.tr; nazlican.sahin@marmara.edu.tr
bDepartment of Physics, Faculty of Arts and Sciences, Yıldız Technical University, 34220, Istanbul, Turkey
cChemistry Department, Marmara University, Istanbul, 34722, Turkey
First published on 17th March 2026
In this study, we investigate how methylammonium chloride (MACl) affects the formation and optoelectronic properties of FAPbI3 perovskite films. The perovskite precursor molarity was systematically varied (1.46–1.80 M) while keeping the MACl additive level constant at 20 mol% with respect to FAPbI3, and a chloride-rich condition (1.2 M with 50 mol% MACl) was additionally examined. Using SEM, XRD, FTIR, and steady-state/time-resolved photoluminescence together with density functional theory (DFT), we establish a direct correlation between MACl-driven crystallization, facet-selective growth, and the resulting structural and optoelectronic properties. XRD reveals enhanced α-phase purity and strengthened (001) preferential orientation upon MACl addition, without any significant or systematic peak shift beyond minor lattice variations. EDS confirms residual chlorine retention after annealing. DFT rationalizes these findings through a dual-ion compensation mechanism, in which MA+-induced lattice contraction and Cl−-induced expansion nearly cancel, preserving the lattice framework while stabilizing the α-FAPbI3 phase. These results provide mechanistic insight into MACl-assisted stabilization and clarify the structural origin of performance improvements in FA-based perovskite solar cells.
In this study, we explore MACl-assisted FAPbI3 film formation using two complementary conditions. Unlike previous reports that primarily focus on the presence or absence of MACl, this work decouples precursor molarity effects from additive loading, enabling a systematic correlation between structural stabilization and device optimization. First, we vary the FAPbI3 precursor molarity (1.46, 1.63, and 1.8 M) at a fixed MACl loading of 20 mol% (relative to FAPbI3) to isolate precursor-concentration effects on crystallization, morphology, and device performance. Second, we include a low-molarity, high-MACl formulation (1.2 M with 50 mol% MACl) as a chloride-rich reference to assess how increased additive content further influences phase stability and film quality. Based on the proposed compensating roles of MA+ and Cl− in the lattice, we examine whether any measurable lattice response accompanies MACl processing using XRD and EDS. Experimental characterization is complemented by DFT calculations to elucidate the structural origin of these trends.
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| Fig. 1 The device structure of pristine and MACl-treated FAPbI3 (FTO/SnO2/perovskite/Spiro-OMeTAD/V2O5/Ag). | ||
The FAPbI3 solution was prepared by dissolving 43 mg formamidinium iodide (FAI) and 116 mg PbI2 powders in a dimethylformamide (DMF)/dimethyl sulfoxide (DMSO) mixed solvent (8
:
1, v/v).14,15 MACl/FAPbI3 precursor solutions were prepared at four different perovskite molarities of 1.2 M, 1.46 M, 1.63 M and 1.8 M. For the 1.46 M, 1.63 M and 1.8 M formulations, MACl was added at 20 mol% with respect to FAPbI3, whereas the 1.2 M formulation was prepared with a higher MACl loading of 50 mol% (chloride-rich condition). The 1.2 M MACl-added FAPbI3 solution was prepared by dissolving 51.5 mg of FAI, 138.5 mg of PbI2 and 9.8 mg MACl in a mixed solvent of DMF/DMSO (4
:
1, v/v). The final solution was stirred at ambient temperature for 2 h. All other solutions were prepared by stirring at room temperature for 30 min. The perovskite solutions with and without MACl powder were spin coated. The perovskite growth process was carried out in a single-step spin coating program at 1000 rpm for 10 s and 4000 rpm for 20 s. 200 μL of chlorobenzene was injected onto the film surface at 10 s prior to the end of the spinning process. After coating, the perovskite films, with and without MACl, were annealed at 150 °C for 15 min to complete the perovskite phase. The substrates were cooled down for few minutes and 50 μL Spiro-OMeTAD solution doped with lithium bis(trifluoromethanesulfonyl)imide (Li-TFSI) and 4-tert-butyl pyridine was spin coated dynamically on a rotating substrate at 4000 rpm for 30 s. The hole transport material solution (chlorobenzene as the solvent) was prepared by dissolving 72.3 mg spiro-OMeTAD, 28.8 μL 4-tert-butylpyridine, and 17.5 μL Li-TFSI (520 mg mL−1 in acetonitrile). Finally, approximately 10 nm of V2O5 and 100 nm of Ag were thermally evaporated as the counter electrode onto the hole transport layer under a vacuum of about 10−6 Pa, forming the back contact. The PSCs have an active area of 0.09 cm2.
To predict the formation energies, the following formula was utilized:
Here, Ef represents the energy of the supercell with MACl incorporated, and E0 is the energy of the pristine supercell. µi is the chemical potential of the incorporated or removed species, and Δni indicates the number of atoms added or removed to generate the modified structure. This method quantifies the energy change due to the incorporation of MACl in FAPbI3 structures, highlighting the thermodynamic stability of the doped configurations.
Fig. 2A–D compares MACl-treated films, where the 1.46–1.80 M series contains the same MACl loading (20 mol%) and the 1.2 M film contains a higher MACl loading (50 mol%) as a chloride-rich reference. The grain size and surface coverage depend on both precursor molarity and MACl loading. Notably, the 1.2 M (50 mol% MACl) film shows the largest grains (∼2.6 μm) and a more homogeneous surface. Within the constant-MACl series (20 mol%), the average grain sizes are ∼1.45 μm (1.46 M), ∼1.61 μm (1.63 M), and ∼2.08 μm (1.8 M), indicating that precursor concentration also influences crystallization. The cross-sectional SEM image (Fig. 2F) confirms well-defined FTO/SnO2/perovskite layering with distinct interfaces and no obvious void formation.
Fig. 2G and H show the EDS spectra of pristine FAPbI3 and 1.63 M MACl-doped FAPbI3 perovskite films, respectively. EDS analysis confirmed the absence of Cl in the pristine FAPbI3. In the perovskite film doped with MACl, a Cl signal (∼0.5%) was observed. This indicates that Cl was not completely removed during annealing and was partially retained within the structure.
Fig. 3 shows the X-ray diffraction (XRD) patterns of the perovskite films. The addition of MACl improves the crystallinity and phase purity of FAPbI3. In particular, the δ-phase impurity peak is suppressed upon MACl incorporation, while the preferred orientation peaks at 14.19° (001) and 28.33° (002) become more intense.19,20
Among the investigated conditions, the 1.2 M film (prepared with higher MACl loading, 50 mol%) exhibits the highest α-phase purity and the strongest preferential orientation along the [001] direction.
Although minor variations are observed, the XRD peak positions do not show a systematic shift beyond instrumental resolution, consistent with DFT results showing compensating effects of MA+ (volume contraction) and Cl− (volume expansion) that nearly cancel when both ions are present, leading to negligible net lattice change (Fig. 8E). As shown in Fig. 2, the increase in the preferred orientation correlated with the increase in particle size and morphological order. Furthermore, the calculated d-spacing changes from 6.23 Å (pristine FAPbI3) to a maximum of 6.33 Å for the MACl-containing samples, corresponding to a variation of less than 2%. These small variations are consistent with microstrain and compensating lattice effects of MA+ and Cl− incorporation rather than a structural phase change. Thus, the crystal structure is essentially preserved despite minor lattice adjustments.
The most intense diffraction features belong to the (001) plane family, emphasizing preferential growth along the [001] direction. Furthermore, the diffraction intensity of the (001) facet increased by approximately 1500% with higher MACl content. This suggests that MACl selectively reduces the surface energy of this facet and promotes its growth.
As a result, the chloride-rich composition (1.2 M) delays the δ-to-α phase transformation, leading to larger grains and improved crystal alignment, as also observed in Fig. 2.21 In contrast, the (011) facet shows no further increase in intensity, highlighting the facet-selective nature of MACl-induced stabilization. Overall, these results indicate that MACl incorporation not only suppresses secondary phases but also directs preferential growth, thereby optimizing the crystallization pathway of FAPbI3 films.
To analyze the surface topography of perovskite films prepared at different MACl contents, AFM measurements were performed and roughness values were extracted for each sample. AFM images at a scale of 15 μm × 15 μm were shown in Fig. 4A–E for pristine and MACl-treated FAPbI3. Film roughness was evaluated using the root mean square (RMS) roughness. The surface roughness was measured as 64.19 nm, 39.88 nm, 32.52 nm, 29.15 nm and 26.42 nm for 1.2 M (50 mol% MACl), 1.46 M (20 mol% MACl), 1.63 M (20 mol% MACl), 1.8 M(20 mol% MACl), and FAPbI3, respectively. 1.2 M (chloride rich) film shows a laterally more uniform and homogeneous coverage, yet a relatively high RMS value. This can arise because RMS roughness is highly sensitive to long-range topography and peak-to-valley height variations; the presence of larger, preferentially oriented grains can increase the height amplitude within the scan area, resulting in a higher RMS even when surface coverage is uniform. Therefore, the higher RMS in the 1.2 M film does not necessarily indicate poorer film quality, but rather reflects pronounced vertically developed features associated with oriented crystal growth. Overall, these results indicate that MACl loading and precursor conditions modify the surface texture of the perovskite films, consistent with the SEM and XRD trends (Fig. 2 and 3).
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| Fig. 4 AFM images of the perovskite films: (A) 1.2 M (50 mol% MACl), (B) 1.46 M(20 mol% MACl), (C) 1.63 M(20 mol% MACl), (D) 1.8 M(20 mol% MACl), and (E) FAPbI3, respectively. | ||
Fig. 5 presents the FTIR spectra of the perovskite films, highlighting changes induced by MACl addition. The peaks at 1710, 1353, 1048 and 590 cm−1 become more pronounced upon MACl treatment of FAPbI3 and can be assigned to C
N stretching, C–H bending, N–H rocking and C–H rocking vibrations, respectively.21 The C
N stretching at ∼1710 cm−1 and the N–H rocking/C–H bending features around ∼1048 and ∼1353 cm−1 are characteristic of the FA+-containing lattice, whereas the C–N stretching region between 960–1000 cm−1 remains largely unchanged, suggesting that MACl does not strongly perturb this particular vibrational mode. In addition, the broad N–H stretching band in the ∼3300–3500 cm−1 range is consistent with MA+/FA+-containing films.22 During perovskite crystallization/annealing, a minor fraction of volatile organic iodide species (e.g., FAI-related components) can be lost, while the persistence of FA+-related bands indicates that the major fraction remains in the final film. Overall, the FTIR spectra indicate that MACl modifies the vibrational signatures of the organic sublattice without drastically altering the bonding environment of the FA+ cation. Because FTIR does not directly identify Cl−, the presence and impact of MA+ and Cl− incorporation into the perovskite lattice are addressed later by DFT calculations.
To evaluate the effect of MACl and perovskite molar concentration on the interfacial charge transfer kinetics, we measured the photoluminescence (PL) spectra of FAPbI3 films on FTO/SnO2 substrates. Fig. 6A shows the room-temperature steady-state PL spectra of the perovskite films. The PL peaks are centered around ∼823 nm, ∼821 nm, ∼818 nm, and ∼817 nm for samples 1.2 M, 1.46 M, 1.63 M, and 1.8 M, respectively, which align with the onset values observed in the absorption spectra. Notably, the emission peak of the FAPbI3-MACl-based films shifts similarly compared to the band edge data obtained from the absorption results, which are 1.513, 1.522, 1.511 and 1.521 eV for 1.2 M, 1.46 M, 1.63 M, and 1.8 M, respectively. The difference between the absorption edge and the PL peak energy indicates the Stokes shift.23
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| Fig. 6 (A) PL and (B) absorption spectra of FAPbI3 films prepared with different concentrations (C) time-resolved PL decay at room temperature for pristine FAPbI3 and 1.63 M MACl-treated FAPbI3. | ||
The Stokes shift for the 1.2 M, 1.63 M, and 1.8 M films is minimal, consistent with reduced defect-assisted relaxation processes and a high level of radiative recombination. The smallest Stokes shift observed for the 1.63 M film is consistent with reduced non-radiative losses and enhanced device performance. Fig. 6C illustrates the decay profiles of pristine FAPbI3 and optimized MACl-treated film (1.63 M) at room temperature. The pristine FAPbI3 film exhibits a short decay time that can be fitted with a mono-exponential function, yielding a lifetime of 106.9 ns. The mono-exponential fit (shown in red) suggests that the carriers recombine quickly, indicating the presence of non-radiative recombination centers, which can limit the overall performance of the material in solar cells. The lifetime extracted for the FAPbI3-MACl film is 109 ns.
In general, longer carrier lifetimes can facilitate carrier diffusion and extraction by suppressing non-radiative recombination losses. However, the nearly identical lifetimes observed here (106.9 ns vs. 109 ns) indicate that MACl does not significantly alter the intrinsic recombination dynamics; therefore, the efficiency enhancement is primarily attributed to improved crystallinity/phase purity and more favorable charge-transport pathways rather than lifetime extension. The comparable TRPL lifetimes (106.9 ns vs. 109 ns) suggest that MACl does not markedly change the intrinsic recombination dynamics; therefore, the device-performance differences discussed below primarily reflect improvements in crystallinity/phase purity and charge-transport pathways.
Fig. 7(A–D) presents the statistical distributions of the key photovoltaic parameters (Voc, Jsc, FF, and PCE) for FAPbI3 (no MACl) and MACl-treated FAPbI3 perovskite solar cells fabricated from different precursor formulations. Voc and Jsc showed better values in MACl-treated solar cells compared to the pristine film. For the constant-MACl series (20 mol% MACl at 1.46–1.8 M), Voc remains nearly unchanged with molarity, suggesting that band-edge energetics are not strongly affected. In contrast, Jsc increases with molarity and saturates at 1.63–1.8 M, consistent with the higher optical absorption observed in these films. The chloride-rich 1.2 M (50 mol% MACl) condition exhibits the highest FF, consistent with the improved phase purity and preferential orientation seen in XRD. As noted above, improved preferential orientation reduces recombination at grain boundaries and enhances carrier extraction efficiency, contributing to improved FF through reduced resistive losses. When all parameters are considered together, the overall device performance is maximized at 1.63 M (20 mol% MACl), which delivers the highest average PCE of 14.02%.
Fig. 7E shows the J–V curves of pristine FAPbI3 perovskite solar cells, while Fig. 7F–G shows the J–V curves of the best performing MACl-treated FAPbI3 perovskite solar cells with precursor molarities of 1.63 M and 1.46 M. The J–V curves show the forward and backward scan results and reveal the typical behavior of high-efficiency perovskite solar cells. For pristine FAPbI3, forward scanning yields a PCE value of 8.40%, while backward scanning shows a slightly higher value of 8.55%. In perovskite solar cells with MACl addition, for a 1.63 M film, forward scanning gives a PCE value of 16.57%, while backward scanning shows a slightly higher value of 16.86%. Similarly, the 1.46 M film gives values of 14.97% (forward) and 15.74% (backward). Higher PCEs were obtained in perovskite solar cells with MACl addition. Furthermore, these results show minimal hysteresis between forward and backward scanning, reflecting stable charge transport and efficient charge collection.
Additionally, the stability test shown in Fig. 7H reveals that MACl-treated films maintain their structural integrity more effectively over time compared to pristine films. The PCE of the FAPbI3 film was initially 8.40%, decreasing to 1.76% after 180 minutes. In contrast, the PCE of the MACl- treated FAPbI3 film was initially measured at 11.44%. Even after 528 hours, it was measured at 10.20%, representing only a 10% loss.
To reconcile the structural findings from Fig. 3 with the photovoltaic performance trends in Fig. 7A–D, a combined interpretation is necessary. From these results, a clear distinction emerges between structural and device optimizations: the chloride-rich condition (1.2 M with 50 mol% MACl) yields the highest α-phase purity, whereas the optimized device performance is achieved at 1.63 M with a fixed MACl loading (20 mol%). In the 1.63 M film, the (001) peak intensity remains dominant and well-defined, although slightly reduced compared to chloride-rich condition, confirming that the α-phase framework is preserved.
Mechanistically, the higher MACl loading at 1.2 M more effectively suppresses the δ-phase and stabilizes the α-phase, producing structurally pure films with high FF. At slightly higher molarities (1.63 M), the optimized precursor concentration leads to higher absorption intensity in the UV-Vis spectra (Fig. 6B) and improved charge-carrier collection, resulting in higher Jsc and ultimately better device efficiency, despite a modest reduction in FF. Improved charge-carrier collection is supported by the reduced Stokes shift, comparable TRPL lifetimes, improved crystallinity and phase purity, and the enhanced device FF, which together indicate reduced recombination losses and more efficient carrier extraction. Similar behavior has been reported by Joo and Choi, who observed that MACl incorporation enhanced the intensity of the (001) diffraction peak and correlated this structural improvement with increased PCE in FAPbI3-based perovskite solar cells.24 The effects of MA+ cations and Cl− anions incorporated into the perovskite structure were investigated using DFT calculations. The simulated α-FAPbI3 phase exhibits a lower surface energy with MACl at the (001) plane, favoring homogeneous growth and explaining the larger grains observed in SEM (Fig. 2). Incorporation of MA+ induces a ∼1.5% volume contraction, while Cl− incorporation leads to a ∼1.6% expansion; when both ions are present, these effects nearly cancel, resulting in <0.5% net lattice change. This agrees with the experimental XRD data, where no systematic or monotonic peak shift is observed beyond minor lattice adjustments (<2%), and the overall lattice framework remains preserved within the instrumental resolution limit, despite the clear improvement in α-phase purity (Fig. 3). As shown in Fig. 8, the MACl-doped structures also exhibit lower formation energies for both bulk and surface models compared to pristine FAPbI3, indicating greater thermodynamic stability. These quantitative results confirm that MACl incorporation not only stabilizes the α-phase lattice but also correlates with the enhanced crystallinity and phase purity observed experimentally.
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