Shape resonances in silane and fluorinated silanes

Abstract

Low-energy electrons with silane and fluorinated silanes are central to plasma-enhanced deposition and etching processes. The shape resonances in these compounds are investigated using the complex absorbing potential method. The key aspect is to locate the resonant state within a sea of continuum states, and this is achieved by applying the nuclear charge stabilisation method in conjunction with the parametric equations of motion. The SiH₄ resonance energy is in reasonable agreement with the electron transmission spectroscopy data, while the SiF₄ resonance explains the low-energy peak in the total scattering cross sections. Successive fluorination leads to an increase in both resonance position and width.