Breaking the Boltzmann limit in sub-5 nm monolayer CdPS3 transistors

Abstract

Tunnel field-effect transistors (TFETs) have gained considerable attention for their potential to overcome the 60 mV dec⁻¹ Boltzmann limit of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs). Using first-principle quantum transport simulations, we investigate the suitability of monolayer CdPS₃ (ML CdPS₃) for sub-5 nm logic devices and examine its anisotropic properties. Our results show that ML CdPS₃ MOSFETs oriented along the zigzag direction exhibit pronounced tunneling-dominated transport, achieving an ultrasteep minimum subthreshold swing (SS) of 37.8 mV dec⁻¹. This characteristic enables devices with a 3 nm gate length to meet the high-performance standards set by the International Roadmap for Devices and Systems (IRDS). Leveraging its unique quantum transport properties, ML CdPS₃ emerges as a strong candidate for next-generation high-performance nanoelectronics.