A PbS quantum dot film as a hole transport layer for self-powered AgBiS2 nanocrystal photodetectors

Abstract

We fabricated an all-inorganic self-powered photodetector based on ZnO/AgBiS₂/PbS–EDT. Compared with the reference device employing spiro-OMeTAD as the hole transport layer (HTL), the PbS–EDT HTL has higher stability, electrical conductivity and favourable near-infrared light absorption. Consequently, the as-fabricated photodetector exhibits superior photovoltaic performance, stability and photoresponsivity over the reference device.