Open Access Article
Sebastian Karger
a,
Elias Drösemeier
b,
Alexander V. Virovets
a,
Eugenia Peresypkina
a,
Hans-Wolfram Lerner
a,
Thomas Müller
*b and
Matthias Wagner
*a
aInstitute of Inorganic and Analytical Chemistry, Goethe University Frankfurt, Max-von-Laue-Straße 7, Frankfurt am Main, 60438, Germany. E-mail: matthias.wagner@chemie.uni-frankfurt.de
bInstitute of Chemistry, Carl von Ossietzky Universität Oldenburg, Carl von Ossietzky-Str. 9-11, Oldenburg, 26129, Germany. E-mail: thomas.mueller@uni-oldenburg.de
First published on 19th May 2026
The all-germanium adamantane (Me3SiGe)4(GeMe2)6 (2) was synthesized from its isomer (Me3GeSi)4(GeMe2)6 (1) via sila-Wagner-Meerwein rearrangement (overall four steps starting from commercial Me2GeCl2, Si2Cl6, and [nBu4N]Cl). The molecular structures of 1 and 2 were characterized by single-crystal X-ray diffraction; a plausible mechanistic scenario is postulated based on quantum-chemical calculations.
A similar bottleneck still hinders the exploration of heavier adamantane homologues. While Marschner's synthesis of the tetrasilylated Si10 adamantane A [(Me3SiSi)4(SiMe2)6; Fig. 1) was conceptually inspired by Schleyer's approach, it highlights the disparity between the two systems:13 tetrahydrodicyclopentadiene is readily available through hydrogenation of dicyclopentadiene, whereas the preparation of the respective Si14-precursor required elaborate oligosilane chemistry.14 Ultimately, the synthesis of A long remained a labor-intensive, 10-step sequence from commercial reactants, proceeding with an overall yield below 4%.13 The resulting limitations were in part alleviated by Su et al., who optimized the Marschner protocol, thereby rendering A accessible in 8 steps with an overall yield of 20%.15 This advance subsequently enabled the regioselective derivatization of A, as well as more comprehensive insight into its optoelectronic properties. Looking ahead, functionalized all-silicon adamantanes now provide previously missing links for systematically probing how fundamental physical features evolve during the transition from discrete molecular silicon species to silicon nanocrystals and, ultimately, the extended semiconductor lattice.16,17
Analogous model systems for Si1−nGen and Si1−nSnn alloys are no less essential, given that these materials, despite their considerable application potential,18–29 remain far less well-understood than bulk silicon. Since 2021, our groups have reported the first mixed SixGey and SixSny adamantanes.26,29 A distinct advantage over A is that these compounds can be accessed in one-pot reactions of Me2GeCl2 or Me2SnCl2 with [SiCl3]−, generated in situ via chloride-induced heterolysis of Si2Cl6.30–32 As a representative example, the Si4Ge6 adamantane B was obtained in 40–45% yield (Fig. 1); likewise, analogues with Si5Ge5, Si6Ge4, Si5Sn5, and Si6Sn4 skeletal compositions and Ge/Sn atoms occupying the secondary (2°) core positions were isolated in pure form. Later, we disclosed the synthesis of compound C, which contains four Ge atoms in quaternary (4°) positions, via sila-Wagner–Meerwein rearrangement33–42 of the permethylated Si6Ge4 adamantane D (Scheme 1).43 Parallel to this research, Su et al. obtained the same compound through Lewis acid-mediated rearrangement of the mixed Si/Ge precursor E in a demanding multistep sequence (Scheme 1).44
A logical next synthetic target is the hitherto unknown Ge10 adamantane. This is not only because it constitutes the unit cell of stable cubic α-germanium, but also because it would provide the first heteroadamantane containing Ge–Ge bonds. Herein, we demonstrate that this compound is indeed accessible via a three-step sequence, building on the insights into group 14 heteroadamantanes outlined above: in the first step, B is permethylated, followed by a fourfold Me3Si/Me3Ge exchange and, finally, migration of the four peripheral Ge atoms into the cluster core through a sila-Wagner–Meerwein rearrangement (Scheme 2a).
The synthesis of the crucial Si4Ge6 precursor BTMS (TMS: Me3Si) was accomplished on a 200 mg scale through permethylation of B with an excess of MeMgBr in THF/Et2O according to a published room-temperature protocol.29 For the installation of the four Me3Ge substituents, we relied on Marschner's45–47 KOtBu-induced Si–Si bond-cleavage reaction. Specifically, a mixture of BTMS and KOtBu/18-crown-6 (6 equiv.) in THF was treated slowly and dropwise with a THF solution of Me3GeCl (8 equiv.) at ambient temperature. Workup afforded the fourfold germylated Si4Ge6 adamantane 1 in 59% yield. We note that employing the formally required stoichiometry of 1
:
4
:
4
:
4 (rather than the actually employed 1
:
6
:
6
:
8 ratio) led to a less selective conversion. The skeletal-editing transformation to furnish the targeted all-germanium adamantane 2 was performed in toluene at 60 °C over 4 d (sealed glass ampoule). [Ph3C][B(C6F5)4] (0.1 equiv.) served as the Lewis-acidic catalyst (87% yield). For a successful rearrangement step, it is crucial to completely remove the crown ether prior to the reaction by chromatographic purification. Crystals of 1·0.75(C5H12) and 2·0.75(C5H12) suitable for X-ray diffraction (SCXRD) were grown from their n-pentane solutions by slow evaporation. The facile conversion BTMS → 1 is particularly remarkable in light of the observation by Su et al. that an analogous Me3Si/Me3Ge exchange on the Si10 adamantane A can be carried out at most twice, which “limits the efficiency of accessing SiGe adamantanes with >2 Ge atoms via skeletal editing if starting from A”.44 We assume that, in the present case, the specific reaction conditions promote a sequential substitution of all four Me3Si groups, although the number of silanide vertices coexisting on the same heteroadamantane intermediate remains unknown. The very formation of silanide intermediates was demonstrated by reaction of BTMS with 1 equiv. of KOtBu/18-crown-6 in THF-d8: NMR spectroscopic analysis unambiguously indicated the essentially quantitative conversion to the monosilanide [3]− (Scheme 2b). After solvent exchange to C6H6, the salt [K(18-c-6)][3] was isolated in crystalline form and characterized by SCXRD.
While BTMS gives rise to two distinct 29Si NMR signals at −3.9 (Me3Si) and −97.7 ppm (4° Si), only a single resonance is detectable for each of the compounds 1 (−88.8 ppm; 4° Si) and 2 (1.4 ppm; Me3Si). The replacement of Me3Si by the more electronegative Me3Ge group upon going from BTMS to 1 is thus accompanied by a deshielding of the corresponding Si vertex by 9 ppm; a comparable deshielding has been reported for the all-silicon adamantane A (−118.6 ppm)13 after exchange of one of its Me3Si substituents for a Me3Ge group (−110.7 ppm).15 Furthermore, the experimentally determined δ(29Si) chemical shifts of 1 and 2 are in good agreement with the computed values (Table S6). Each of the compounds BTMS, 1, and 2 displays only two 1H and two 13C NMR resonances, consistent with their proposed Td-symmetric molecular frameworks. Symmetry breaking due to the absence of one Me3Si substituent in the monosilanide [3]− results in four distinct 1H NMR signals: one corresponds to the remaining three Me3Si substituents (27H), one to the α-GeMe2 units (18H), and two to the axial and equatorial-pointing GeMeax (9H) and GeMeeq (9H) groups, respectively (Scheme 2b). Compared to the tetrahedrally coordinated Si–SiMe3 vertices (δ(29Si) = −109.4), the resonance of the silanide site appears slightly downfield (δ(29Si) = −96.3).
The four SixGey adamantanes A, BTMS, 1, and 2 show very similar UV/vis absorption spectra with peak maxima (λmax) in the range 222–228 nm (in cyclohexane; Table S1).13 These similarities are consistent with previous studies on SixGey adamantanes44 and nanoscale Si1−nGen crystals,48 indicating only a small effect of increasing Ge content on the optical band gaps.49
The rhombohedral unit cells of 1 and 2 each contain a single crystallographically unique molecule located on a C3 axis that passes through one of the E–EMe3 bonds and the center of the opposite boat-like E6 ring (Fig. 2; E = Si, Ge). Successful Me3Si/Me3Ge exchange is evidenced by the fitting atomic scattering factors for the peripheral, heavy Ge atoms and by the elongated average Si–EMe3 bond length in 1 (2.399[3] Å; E = Ge) compared to BTMS (2.3567[7] Å; E = Si; cf. FEWWAJ = BTMS in Table S11);29 the corresponding average Ge–SiMe3 bond length in 2 is 2.396[2] Å.50 As expected, the average Ge–Ge bond length within the cluster core of the Ge10 adamantane 2 is further increased to 2.433[1] Å, in good agreement with representative literature values.39,50–52 [K(18-c-6)][3] forms Cs-symmetric contact-ion pairs in the solid state (K+⋯Si− = 3.388(2) Å; Fig. 2). The sum of the Ge–Si–Ge bond angles at the silanide center of [3]− amounts to 304.5(2)°, which is significantly smaller than the corresponding average value of 324.1(2)° for the tetrahedral Si–SiMe3 centers. The higher degree of pyramidalization of the silanide vertex indicates pronounced s-character of the electron lone pair and a corresponding increase in p-orbital contribution to the Si–Ge bonds, in agreement with Bent's rule.53
Density functional theory (DFT) calculations at the MN15/def2-TZVP level (see the SI for details) indicate that the isomerization of the germylated Si4Ge6 adamantane 1 to the silylated Ge10 adamantane 2 is exothermic by 357 kJ mol−1 (Scheme 2a and SI). A conceivable Si4Ge6 adamantane isomer featuring all four Si atoms in 2° positions, lies energetically between isomers 1 and 2 (cf. F; Fig. S19). The selective formation of isomer 2 suggests that the sila-Wagner-Meerwein rearrangement of these clusters is thermodynamically controlled.43 In particular, the resulting greater number of Si–C bonds, combined with their higher bond dissociation energy (BDE = 385 kJ mol−1) relative to the Ge–C bond (332 kJ mol−1), outcompetes the energetic penalty of replacing stronger Ge–Si (311 kJ mol−1) with weaker Ge–Ge bonds (293 kJ mol−1; see Table S3 for calculated BDEs). Specifically, the 1 → 2 conversion is associated with the exchange of twelve Ge–C bonds for twelve stronger Si–C bonds (Δ(ΣBDE) = −636 kJ mol−1) and of twelve Si–Ge bonds by twelve weaker Ge–Ge bonds (Δ(ΣBDE) = 216 kJ mol−1). A simple additive estimate based on these increments yields an overall energy difference of −420 kJ mol−1 in favor of 2, which is close to the DFT-computed energy difference between 1 and 2 of −357 kJ mol−1 (Scheme 2a).
We investigated the [Ph3C]+-catalyzed isomerization 1 → 2 in detail. Previous experimental and computational studies on related systems have shown that the initial step in this type of reaction involves the formation of silylium or germylium ions via Me−-anion transfer from the SixGey oligomer to the [Ph3C]+ cation.54 Following rearrangement to the thermodynamically most stable silylium or germylium ion, this species finally abstracts Me− from another molecule of the starting material (here 1), thereby affording the product and initiating the next rearrangement event. Me− abstraction from 1 leads to two possible cations, [G]+ and [H]+, with the 2° germylium ion [G]+ being more stable by 16 kJ mol−1 than the exo-cluster germylium ion [H]+ (Scheme 3a). Both [G]+ and [H]+ are significantly higher in energy than the cations [I]+ and [J]+, which are plausible immediate precursors of the final product 2. The enhanced stability of [I]+ and [J]+ arises from the exo-cage position of all four Si atoms, thus maximizing the number of strong Si–C bonds. Consequently, the isomerization of the 2° germylium ions [G]+ → [I]+ corresponds to the most exothermic rearrangement pathway (−371 kJ mol−1; Scheme 3a).
The large exothermicity of the transformation [G]+ → [I]+ guarantees the catalytic nature of the reaction although the regeneration of germylium ion [G]+ by Me− transfer from the Si4Ge6 adamantane 1 to [I]+ is slightly endergonic (ΔGR = +15 kJ mol−1, Scheme 3b).
While bulk silicon and germanium remain foundational semiconductor materials, the drive toward device miniaturization necessitates a deeper understanding of how quantum confinement reshapes their physical properties at the nanoscale.55,56 In contrast to the extensive body of work on silicon nanoclusters,57–60 their germanium counterparts are still comparatively underexplored61–65 – notwithstanding the current renaissance of germanium in optoelectronic applications. Currently, the field of molecular germanium clusters is dominated by soluble polyhedral Zintl anions and unsaturated metalloid species.65,66 Prominent examples are the nido-cluster [Ge9]4− (Corbett)67 and its silylated derivative [Ge9(Si(SiMe3)3)3]− (Schnepf, Sevov).68,69 These clusters contain both ‘naked’ and substituent-bound Ge atoms. In contrast, 2 bears a peripheral group at each Ge atom and is thus an electron-precise saturated cage paralleled only by the tetragermatetrahedrane [Ge(SitBu3)]4,70 hexagermaprismane [Ge(CH(SiMe3)2)]6,71 and octagermacubane [Ge(CMeEt2)]8.72 Unlike these smaller polyhedral species, the Ge10 adamantane 2 is free of strain and represents the fundamental structural motif of α-germanium. Given conflicting theoretical reports73 regarding the extent of σ-delocalization74,75 and quantum-confinement effects in all-tetrel adamantanes and diamantanes, the scalable synthesis and foreseeable rich derivatization chemistry of 2 will enable the critical validation of existing theoretical models through robust experimental data.
CCDC 2545827–2545829 contain the supplementary crystallographic data for this paper.76a–c
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