Crystal engineering of manganese nitride thin film electrodes for all-nitride asymmetric supercapacitors

Quanxing Guo; Shuyue Fang; Binbin Wei; Qiaoyan Chen; Junjie Chen; Junhong Huang; Jingang Wu; Minming Jiang; Xiaohong Ge; Ningbo Liao; Hanfeng Liang; Zhengbing Qi

doi:10.1039/D6CC02349E

Crystal engineering of manganese nitride thin film electrodes for all-nitride asymmetric supercapacitors

Quanxing Guo,^a Shuyue Fang,^a Binbin Wei,*^ab Qiaoyan Chen,^a Junjie Chen,^a Junhong Huang,^a Jingang Wu,^a Minming Jiang,*^a Xiaohong Ge,^d Ningbo Liao,

^e Hanfeng Liang

^c and Zhengbing Qi

*^a

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* Corresponding authors

^a Key Laboratory of Functional Materials and Applications of Fujian Province, School of Materials Science and Engineering, Xiamen University of Technology, Xiamen, China
E-mail: bbwei@xmut.edu.cn, jiangminming@xmut.edu.cn, zbqi@xmut.edu.cn

^b Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore

^c State Key Laboratory of Physical Chemistry of Solid Surfaces, Tan Kah Kee Innovation Laboratory (IKKEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, China

^d Eyepol Optical Technology (Xiamen) Co., Ltd, Xiamen, China

^e College of Mechanical & Electrical Engineering, Wenzhou University, Wenzhou, China

Abstract

Crystal engineering of magnetron sputtered manganese nitride thin film electrodes is demonstrated. Mn₃N₂ electrodes deliver a high areal capacitance of 66.7 mF cm⁻², attributed to favorable K⁺ adsorption, enhanced charge transfer and lower migration barrier. An asymmetric Mn₃N₂‖VN supercapacitor achieves an energy density of 153.1 mWh cm⁻³ and excellent cycling stability.

Chemical Communications

Crystal engineering of manganese nitride thin film electrodes for all-nitride asymmetric supercapacitors

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Crystal engineering of manganese nitride thin film electrodes for all-nitride asymmetric supercapacitors

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