DOI:
10.1039/D6CC02132H
(Communication)
Chem. Commun., 2026, Advance Article
Imaging the reactivity of carbon nitride nanosheets by photoinduced cathodic electrochemiluminescence microscopy
Received
8th April 2026
, Accepted 18th May 2026
First published on 19th May 2026
Abstract
Carbon nitride (CN) is a highly promising electrochemiluminescence (ECL) nanomaterial operating in aqueous media at physiological pH. Here, we report the upconversion photoinduced ECL (PECL) emission on a p-type Si modified with CN nanosheet (p-Si/CNNS) photocathode in aqueous solution. The PECL activity of the single micrometer-sized CNNS was directly imaged by microscopy, revealing the heterogeneity at the single-particle level. In addition, the reported approach allows decreasing the onset ECL potential to −0.47 V vs. Ag/AgCl. This study opens new avenues for light-addressable electrochemical systems, the optimization of CNNS reactivity, and the study of new ECL materials.
Due to the advantages of fast-response, electrochemical control and high sensitivity, electrochemiluminescence (ECL) in aqueous electrolytes at physiological pH has become widely used for sensing1–6 in the field of medical diagnosis. The traditional ECL approach measures averaged luminescence originating from a large ensemble of individual luminophores, while ECL microscopy7–10 allows single-entity imaging11,12 from single particles to single (bio)molecules.13–16 In cathodic ECL, most of the luminophores, especially carbon-based nanomaterials17–21 such as graphene quantum dots22,23 and carbon dots,24,25 were well recognized to emit strong ECL at a more negative potential than −1.2 V (all potentials are referred against Ag/AgCl, 3 M KCl) with persulfate, the typical cathodic coreactant. Since its first report in 2012,26 graphitic carbon nitride (CN)27–30 has become a highly promising cathodic ECL luminophore due to excellent conductive catalytic properties, large specific surface area,29 low toxicity and tunable luminescence characteristics. With this system, the ECL emission onset, controlled by electron injection in the conduction band of CN, usually starts at −0.82 V and requires a negative cathodic potential (over −0.9 V)31 to reach an important output signal. Many chemical modification methods such as heteroatom doping, defect introduction31 and heterostructuration32 were performed on CN to lower the trigger potential. Li et al.33 designed nickel single-atom doped CN and reported nitrogen vacancy engineering of nickel single-atom catalyst CN, which slightly shifted the onset potentials to −0.80 and −0.72 V, respectively. Liu et al.34 developed potassium doped CN, which achieved a large shift of the ECL excitation peak potential from −1.56 to −0.73 V with an onset potential of around −0.5 V and a red-shifted emission.
Photoinduced electrochemiluminescence (PECL) is a growing field of research that combines semiconductor (SC) photoelectrochemistry and ECL.35–46 Compared with conventional ECL, upon illumination of the SC photoelectrode, interfacial charge transfer with photogenerated minority carriers enables ECL emission at lower applied potentials due to photovoltage generation, thereby improving biocompatibility. PECL also enables near IR imaging47 and the construction of direct light-addressable48 devices.49 In contrast to photoluminescence (PL), this photoexcitation–ECL decoupling mechanism intrinsically suppresses both optical scattering and sample autofluorescence, thereby markedly enhancing the signal-to-noise ratio and spatial resolution. It should be pointed out that a major challenge for PECL is the poor stability of the SC photoelectrodes, which are prone to corrosion upon exposure to air and an aqueous electrolyte. To date, aqueous PECL has only been demonstrated using photoanodes with specific luminophores (luminol, L-012,50 and [Ru(bpy)3]2+). These systems employed stabilized photoanodes, such as (n-type Si) n-Si-based materials protected with transition metal thin films51,52 and stable oxide-based SC photoanodes.41 Moreover, PECL images of single cells42 and electrocatalysts have been recorded. As an alternative to anodic PECL, the less-explored cathodic PECL based on p-type SCs is expected to benefit stability, as detrimental surface oxidation is inhibited on negatively polarized Si-based electrodes.53–55 So far, PECL on photocathodes has only been proposed in organic solvents with a diphenylanthracene derivative via an ion-annihilation pathway56,57 and [Ru(bpy)3]2+/benzoyl peroxide via a cathodic ECL pathway.58
Here, we report an upconversion PECL system operating in aqueous solution (pH 7.4), using a p-Si modified with CN nanosheet (CNNS) photocathode (p-Si/CNNS). For an unmodified CNNS, the PECL onset potential achieved an unprecedentedly low potential (−0.47 V). The ability of PECL to trigger ECL at low potentials was first validated on a cathodic solid-state luminophore. In addition, clear and dynamic PECL images of single CNNS particles were observed, for the first time, at −0.9 V, showing the reactivity map of the material.
In our experiment, the CNNS particles were directly immobilized on p-Si. As depicted in Fig. 1a and b, the upconversion PECL of the p-Si/CNNS photocathode was studied with K2S2O8 as a coreactant, in PBS at pH 7.4. The photocathodes were prepared as follows: a suspension of CNNS in absolute ethanol was dropped onto freshly hydrogenated p-Si electrodes and dried at room temperature. Under illumination (850 nm), electrons photogenerated inside or close to the p-Si depletion region can participate in the electrochemical reactions if the downward band bending (i.e., the applied potential) is sufficiently large. At the p-Si/electrolyte interface, electrons reduce S2O82− to a strongly reactive radical SO4˙− and CNNS to CNNS˙−. SO4˙− oxidizes CNNS˙−, leading to its excited state CNNS* (Fig. 1a). The excited luminophore returns to the ground state by emitting a photon at λECL = 468 nm (Fig. 1c, cyan curve), consistent with previous works.26 As a control experiment, the ECL of CNNS on a heavily doped non-photoactive n+-Si/CNNS electrode (essentially behaving as a conductor) was also studied in the dark. The ECL spectrum of p-Si/CNNS well overlapped with that of n+-Si/CNNS (Fig. 1c, blue curve), and both were red-shifted by 13 nm compared with the fluorescence emission band at 455 nm (Fig. 1c, dark curve) of CNNS in absolute ethanol. During our experiments, all voltammograms and PECL experiments were recorded in 0.1 M PBS with 0.1 M K2S2O8.
 |
| | Fig. 1 (a) Scheme of a p-Si/CNNS photocathode during the photoinduced ECL process under near IR irradiation (λexc = 850 nm). Ef, ECB and EVB represent the Fermi level, conduction band and valence band of p-Si, respectively. (b) Scheme of the PECL microscopy setup. (c) Fluorescence (FL) spectrum of CNNS in absolute ethanol (black, excitation at 365 nm), ECL spectrum recorded on n+-Si/CNNS in the dark (dark blue) and PECL spectrum recorded under near IR illumination on p-Si/CNNS (cyan). (d) Linear sweep voltammograms recorded under near IR irradiation on p-Si/CNNS (cyan), in the dark on n+-Si/CNNS (dark blue) and on p-Si/CNNS (black). (e) Corresponding ECL intensity profiles. Measurements were performed in 0.1 M PBS with 0.1 M K2S2O8. Scan rate: 50 mV s−1. | |
The p-Si/CNNS photocathodes were first studied by linear sweep voltammetry (LSV) from −0.3 to −1.2 V under near IR irradiation and in the dark. The LSV curve in Fig. 1d shows that no current was observed in the dark (black curve); however, a photocurrent started to increase significantly from −0.31 V under illumination, which is attributed to the reduction of S2O82− on the p-Si surface. This is demonstrated by the LSV curve recorded without S2O82− (Fig. S1a). The current recorded for n+-Si/CNNS in the dark (Fig. 1d) starts to increase significantly from −0.62 V. The corresponding ECL intensity plots, shown in Fig. 1e, reveal no ECL response from p-Si/CNNS in the dark and an onset of PECL emission at −0.47 V, which increased considerably until −1.2 V under illumination. The ECL was attributed to the excited CNNS* produced by the exergonic reaction between CNNS˙− and SO4˙− in close proximity to the p-Si electrode (this is in good agreement with the ECL experiments performed on p-Si/CNNS in the absence of S2O82−, Fig. S1b). Under the same conditions, the onset of ECL emission was observed at −1.1 V for n+-Si/CNNS in the dark (Fig. 1e). Fig. 2 shows the ECL spectra collected on both n+-Si/CNNS in the dark (left) and p-Si/CNNS under illumination (right) during the LSV measurements recorded from −0.3 V to −1.2 V. A significant positive shift (+630 mV) of the emission onset potential was found for p-Si/CNNS under illumination compared with that recorded for n+-Si/CNNS in the dark (Fig. S2). The underlying mechanism is elaborated in Section S2.1 of the SI.
 |
| | Fig. 2 Emission spectra recorded from −0.3 to −1.2 V in the dark on n+-Si/CNNS (blue) and under near IR illumination on p-Si/CNNS (cyan). The measurements were performed in 0.1 M PBS with 0.1 M K2S2O8. Scan rate: 50 mV s−1. | |
The composition of the outermost surface of the electrodes was analyzed by X-ray photoelectron spectroscopy (XPS; Fig. S3a). The spectrum recorded for bare p-Si indicates that, before CNNS deposition, the surface consists only of Si and O atoms, with a low content of adventitious C, N and F. The spectrum acquired from the region containing CNNS confirms the presence of the deposited CNNS, as evidenced by significantly enhanced C 1s and N 1s peaks. These spectra also feature a strong decrease in the Si 2p and O 1s peak intensities. The high-resolution XPS spectra (Fig. S3b–d) are discussed in Section S2.3 of the SI. AFM (Fig. S4) and low-resolution (Fig. S5) and high-resolution scanning electron microscopy (SEM; Fig. 3a) were performed on the as-prepared p-Si/CNNS surfaces and revealed CNNS particles with a size distribution ranging from 0.1 to 7 µm with a height of ∼250 nm for the largest CNNS particles (Fig. S4b). EDS mapping (Fig. 3b–d) revealed that C and N were well distributed within the CNNS particles, whereas a weaker Si signal was observed in regions with thick CNNS coverage. EDS elemental analysis of selected regions of p-Si/CNNS (Fig. S6) is discussed in Section S2.5. PECL imaging was performed at a constant potential of −0.9 V under illumination with the largest CNNS particles, as depicted in Fig. 1b (see Sections S1.2 and S1.6). The corresponding current–time curves were recorded and are shown in Fig. S7. Four well-defined CNNS particles’ surfaces were selected based on the dark field image (Fig. 3e). The PECL profiles (Fig. 3h) of these four CNNS particles are indicated by the colored solid squares in Fig. 3g. Their physical size was first estimated from the images obtained in dark field mode, and the full widths at half maximum were 3.5, 2.8, 6.0, and 4.2 µm. For the same CNNS particles, the full widths at half maximum were also extracted from the PECL images, yielding the following values: 4.8, 4.3, 5.4, and 5.3 µm, respectively. The enlarged apparent dimensions of CNNS particles in PECL mode might be related to the fact that even thin edges of the CNNS particles emit PECL light, whereas they are more difficult to image in the dark field mode. The emitted PECL light is stronger in the centre than at the edges, and some inhomogeneities could be observed. However, this may be related to the particles’ thickness and the contact between the CNNS particles and the electrode. As a control, PECL imaging was performed under identical conditions on (i) p-Si/CNNS in an electrolyte lacking K2S2O8 and (ii) bare p-Si; no ECL emission was detected in either case. In addition, the temporal evolution of the PECL signal was measured on the four selected CNNS particles by analyzing sequential PECL images (Fig. S8a–f). It was clearly visible that the four CNNS particles appeared when the light (λexc = 850 nm) was switched on and then PECL intensity exhibited a gradual decrease and subsequently stabilized at a plateau. The PECL profile of CNNS #3 as a function of time is shown in Fig. 3i, which clearly shows a progressive decrease over time until reaching a quasi-stable intensity. The reasons for the attenuation of luminous intensity are discussed in Section S2.7 of the SI.
 |
| | Fig. 3 (a) SEM images of CNNS deposited on p-Si and EDS mapping of C (b, blue), N (c, green) and Si (d, red). (e)–(i) Microscopy images of individual CNNS on p-Si/CNNS. Darkfield image (e) and corresponding PECL images in the dark (f) and (g) under 850 nm irradiation at −0.9 V. (h) PECL intensity profiles extracted for the four CNNS particles selected on p-Si/CNNS (see panel (g)). (i) Variation of PECL intensity profiles of the selected CNNS #3 as a function of time. Electrolyte: 0.1 M PBS with 0.1 M K2S2O8. | |
To conclude, we exploited upconversion PECL to trigger the emission of CNNS deposited on photoactive p-Si at an unprecedentedly low potential without any chemical modification of the nanomaterials. Single CNNS particles were imaged by PECL microscopy. The reported approach enables spatiotemporal resolution of CNNS particles' emission, which reflects their local reactivity. In addition, the potential required to generate strong ECL emission was notably reduced to −0.47 V under physiological conditions. The PECL approach has great potential to be extended to other cathodic carbon-based materials. Finally, PECL microscopy opens new opportunities for imaging the reactivity of single photoactive nanoparticles and catalytic nanomaterials.
Conflicts of interest
There are no conflicts to declare.
Data availability
The data supporting this article have been included as part of the supplementary information (SI). Supplementary information is available. See DOI: https://doi.org/10.1039/d6cc02132h.
Acknowledgements
This work was financially supported by the Natural Science Foundation of Shandong Province (ZR2021QB080), the National Natural Science Foundation of China (21804063), and the French National Research Agency as a part of the France 2030 Program, under grant ANR-24-EXLU-3400014 (project VISIBLE of PEPR LUMA). C. Labrugère and P. Legros from PLACAMAT are acknowledged for XPS and SEM characterization studies. W. Z. acknowledges the China Scholarship Council for her visiting scholarship. C. L. is grateful for his visiting fellowship from the Shandong Government and Liaocheng University.
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