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Correction: Heterogeneous integration of 8-inch LiNbO3 films for second harmonic generation

Yong Wanga, Zi Wangb, Yang Liua, Lina Yanga, Kaixuan He*a, Lifan Zhanga, Guodong Wang*b and Lei Zhangb
aEast China Institute of Photo-Electron IC, Bengbu 233000, China. E-mail: hekxsr@163.com
bState Key Laboratory of Crystal Material and Institute of Novel Semiconductors, Shandong University, Jinan, 250100, P. R. China. E-mail: guodong9631@sdu.edu.cn

Received 11th July 2025 , Accepted 11th July 2025

First published on 21st July 2025


Abstract

Correction for ‘Heterogeneous integration of 8-inch LiNbO3 films for second harmonic generation’ by Yong Wang et al., J. Mater. Chem. C, 2025, https://doi.org/10.1039/d5tc01952d.


The authors regret that Fig. 4 was inadvertently replaced with a copy of Fig. 5. The correct version of Fig. 4 is shown in this notice.
image file: d5tc90119g-f4.tif
Fig. 4 Cross-section of 8-inch heterogeneous integrated LN wafers: (a) TEM result; (b) EDS mapping results; (c) HRTEM result; (d) atomic structure diagram.

The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.


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