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Correction: Heterogeneous integration of 8-inch LiNbO3 films for second harmonic generation
Yong
Wang
a,
Zi
Wang
b,
Yang
Liu
a,
Lina
Yang
a,
Kaixuan
He
*a,
Lifan
Zhang
a,
Guodong
Wang
*b and
Lei
Zhang
b
aEast China Institute of Photo-Electron IC, Bengbu 233000, China. E-mail: hekxsr@163.com
bState Key Laboratory of Crystal Material and Institute of Novel Semiconductors, Shandong University, Jinan, 250100, P. R. China. E-mail: guodong9631@sdu.edu.cn
First published on 21st July 2025
Abstract
Correction for ‘Heterogeneous integration of 8-inch LiNbO3 films for second harmonic generation’ by Yong Wang et al., J. Mater. Chem. C, 2025, https://doi.org/10.1039/d5tc01952d.
The authors regret that Fig. 4 was inadvertently replaced with a copy of Fig. 5. The correct version of Fig. 4 is shown in this notice.
 | ||
| Fig. 4 Cross-section of 8-inch heterogeneous integrated LN wafers: (a) TEM result; (b) EDS mapping results; (c) HRTEM result; (d) atomic structure diagram. | ||
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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