Open Access Article
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Correction: An ion-gating synaptic memristor based on tri-layer HfOx composition regulation
Lanqing
Zou
a,
Junming
Zhang
a,
Yunhui
Yi
a,
Jiawang
Ren
a,
Huajun
Sun
*ab,
Chuqian
Zhu
a,
Jiyang
Xu
a,
Sheng
Hu
ac,
Lei
Ye
ab,
Weiming
Cheng
ab,
Qiang
He
ab and
Xiangshui
Miao
ab
aSchool of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Hubei Engineering Research Center on Microelectronics, Huazhong University of Science and Technology, Wuhan 430074, China. E-mail: shj@hust.edu.cn
bHubei Yangtze Memory Laboratories, Wuhan 430205, China
cWuhan Xinxin Semiconductor Manufacturing Corporation, Wuhan, 430205, China
First published on 7th April 2025
Abstract
Correction for ‘An ion-gating synaptic memristor based on tri-layer HfOx composition regulation’ by Lanqing Zou et al., J. Mater. Chem. C, 2025, 13, 5326–5331, https://doi.org/10.1039/D4TC04564E.
The authors regret that an incorrect version of Fig. 4a was included in the published article, showing incorrect data points for the first cycle. This does not impact any of the conclusions of the article. The corrected version of Fig. 4 is shown in this notice.
 | ||
| Fig. 4 (a) Cycle-to-cycle conductance evolution. (b) LTP/LTD process linearity fitting graph. (c) VO migration diagram in the CFs during LTP/LTD. (d) Structure of the HNN. (e) Alarm clock images display process during 200 weight updates in HNN learning with the T-HfO1.7 and the device with ideal linearity. (f) The learning accuracy for the HNN. | ||
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
| This journal is © The Royal Society of Chemistry 2025 |