First phosphite-bridging lanthanide–bismuth heterometallic selenotungstates and their ratio-metric-temperature luminescence sensing properties
Abstract
Designing luminescent materials with adjustable emission and high-temperature sensitivity in a rational manner remains a significant challenge in advanced temperature-sensing applications. Herein, we prepared two phosphite-bridging LnIII–BiIII heterometallic selenotungstates [H2N(CH3)2]8Na2H4[Ln2W3BiO6(HPO3)(H2MA)(H2O)5]2[B-α-SeW9O33]4·52H2O (Ln3+ = Eu3+, {Eu4Bi2P2W42}; Ln3+ = Tb3+, {Tb4Bi2P2W42}; H6MA = mucic acid) by introducing [HPO3]2−, Bi3+ and [SeO3]2− into the Ln3+/WO42− system through a one-step self-assembly strategy. Their polyanions feature a mucic-acid-modified phosphite-bridging LnIII–BiIII heterometallic {[Ln2W3BiO6(HPO3)(H2MA)(H2O)5]2}18+ cluster connecting four [B-α-SeW9O33]8− units. Luminescence measurements confirm the good luminescent properties of {Ln4Bi2P2W42}. Through the Eu3+/Tb3+ co-doping method, {Eu4xTb4−4xBi2P2W42} doped-Ln–POMs were prepared, and energy transfer from Tb3+ to Eu3+ within the Eu0.2Tb3.8Bi2P2W42 doped-material was observed, enabling tunable emission color from green to red under 365 nm UV irradiation. Furthermore, the ratio-metric-temperature luminescence sensing properties of the doped-Ln–POMs were systematically investigated. From 110 to 320 K, the luminescence intensities of Tb3+ and Eu3+ decrease due to the thermal activation of the non-radiative decay pathway. Notably, the Eu0.2Tb3.8Bi2P2W42 doped material shows the highest relative sensitivity (Sr = 6.4% K−1) and the lowest temperature uncertainty (δT = 0.36 K) at 320 K compared to other co-doping Ln–POM-based materials. This work not only offers a new approach for constructing innovative lanthanide–main-group heterometallic selenotungstates but also establishes a promising platform for the development of high-performance ratio-metric-temperature luminescence sensing.