Erosion behaviors of silicon carbide at micro–nano scales under atomic oxygen exposure

Abstract

Reactive molecular dynamics (RMD) methods are employed to investigate the interface evolution and oxidative erosion behavior of silicon carbide (SiC) under extreme atomic oxygen (AO) impact (high energy and flux). The degree of AO concentration at the surface is found to be a key factor regulating AO-induced oxidation behavior, while temperature plays a decisive role in driving transitions between erosion stages. High-flux AO impact increases the transition temperature of passive-to-active oxidation stage. The addition of a thermostat enhances SiC's resistance to AO erosion. Si-surface materials exhibit superior penetration resistance, oxidation resistance, and thermal protective properties under extreme AO impact conditions.