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Correction: Growth of p/n-type BiFeO3 thin films for construction of a bilayer p–n junction for photodegradation of organic pollutants

Hao-Yun Tu a and Xiaoding Qi *ab
aDepartment of Materials Science and Engineering, National Cheng Kung University, Tainan City 70101, Taiwan. E-mail: xqi045@ncku.edu.tw
bCenter for Micro/Nano Science and Technology, National Cheng Kung University, Tainan City 70101, Taiwan

Received 12th December 2024 , Accepted 12th December 2024

First published on 23rd December 2024


Abstract

Correction for ‘Growth of p/n-type BiFeO3 thin films for construction of a bilayer p–n junction for photodegradation of organic pollutants' by Hao-Yun Tu et al., J. Mater. Chem. A, 2024, 12, 12752–12761, https://doi.org/10.1039/D4TA01615G.


The authors regret that an incorrect version of Fig. 1 was included in the originally published article. The correct version of Fig. 1 is shown below.
image file: d4ta90240h-f1.tif
Fig. 1 XRD θ–2θ scans. Single layer of BFO deposited with the Ar/O2 ratios of (a) 80/2 (p-type), (b) 80/5, (c) 80/10 (n-type), and (d) 80/15, respectively. (e) pn bilayer.

The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.


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