Open Access Article
M. El Bejia,
N. Hafienea,
M. Jdira,
S. Jaballaha,
M. N. Bessadok
a,
F. Ben Alia,
G. Nerib and
L. El Mir
*a
aGabes University, Faculty of Sciences of Gabes, Laboratory of Physics of Materials and Nanomaterials Applied at Environment (LaPhyMNE), 6072 Gabes, Tunisia. E-mail: Lassaad.ElMir@fsg.rnu.tn
bDepartment, of Engineering, University of Messina, C. da Di Dio, 98166 Messina, Italy
First published on 23rd October 2025
This research investigates magnesium-doped zinc oxide nanoparticles (NPs) synthesised by a modified sol–gel technique to create a high-performance gas sensing device with an enhanced sensing layer. The synthesised nanoparticles' structural, morphological characteristics, composition, and optical properties were analysed using X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy-dispersive spectrometry (EDX), UV-Vis absorption, and photoluminescence spectroscopy (PL). XRD analysis depicts that the samples possessed a hexagonal crystal structure with high crystallinity. TEM and SEM analyses indicated that the nanoparticle size was approximately 45 nm, and this size increased with the increasing magnesium content. The gas sensor evaluations were performed in the temperature range from 200 to 400 °C. The ZnO sample that was doped with 1% Mg (M1ZO) demonstrated the greatest response (∼19.9) to 40 ppm acetone (C3H6O) at 300 °C. This sensor exhibited quicker response and recovery times, ranging from 2 to 332 s, respectively, alongside enhanced selectivity for C3H6O when compared to ammonia (NH3), carbon dioxide (CO2), hydrogen sulphide (H2S), and sulphur dioxide (SO2). These findings suggest that Mg-doped ZnO holds promise as a material for controlling pollution and for applications in environmental gas sensing.
In this work, we developed acetone (C3H6O) gas sensors using Mg-doped ZnO materials, which exhibit exceptional efficiency at 300 °C. Even at very low quantities of C3H6O gas around 5 ppm, these sensors exhibit high sensitivity, quick response and recovery times. In this regard, the effect of magnesium doping was systematically investigated to enhance ZnO's gas sensing properties by altering its surface shape and energy band structure. Mg doping was used as a tool to enhance the structural and electrical properties of ZnO, creating active centres enabling optimal sensor performances at around 300 °C.
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Mg nanoparticles was as follows: 16 g of zinc acetate dihydrate [Zn (CH3COO)2·2H2O; 99%] was dissolved in 112 mL of methanol using a magnetic stirrer for 10 minutes. Next, a suitable amount of magnesium nitrate dihydrate [Mg (NO3)2·2H2O, 98%] relating to [Mg]/([Zn] + [Mg]) ratios of 0.01 (M1ZO), 0.03 (M3ZO), and 0.05 (M5ZO) were added to the above solution while maintaining magnetic stirring as shown in Fig. 1 for an additional 15 minutes until achieving a clear and uniform solution. After the precursors had fully dissolved, 188 mL of ethanol was added. This solution was then transferred into an autoclave and dried under the supercritical conditions of ethyl alcohol (Tc = 243 °C, Pc = 63.6 bars) following the method described by El Mir et al.16,17 Additionally, the acquired samples were subjected to heat treatment at 450 °C in air for 2 hours in a furnace to produce well-crystallised Mg-doped ZnO nanopowders. In the following, we indicate the samples by MXZO with X denoting the atomic percentage of Mg relative to Zn.
| βtot = βe + βL | (1) |
![]() | (2) |
970 A multimeter. The gas reaction was determined as S = Ra/Rg, in which Ra indicates the sensor's electrical resistance in dry air, while Rg denotes the resistance at different concentrations of C3H6O gas.
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| Fig. 3 X-ray diffraction analysis of ZnO, M1ZO, M3ZO, and M5ZO samples heat-treated at 450 °C for 2 hours. | ||
The refined XRD patterns of synthesised ZnO and MXZO nanoparticles are shown in Fig. 4. The experimental XRD patterns are shown in red, and the fitted graphs are shown in black. Bragg's positions are shown by vertical green lines, and the difference between experimental and fitted lines is shown by a blue line. It can be observed that the fitted graph is in good agreement with the experimental one.
Table 1 summarises the different refined lattice constants and unit cell volumes. The refined lattice constants of the ZnO sample are in good agreement with the literature (a = 0.3249 nm, c = 0.5206 nm).22 The increase of lattice parameters for MXZO samples and hence the expansion of the corresponding unit cell volume is confirmed.
| Sample | Lattice parameters (Å) | Lattice volume (Å3) | D W–H (nm) | Strain (ε) (10−4) |
|---|---|---|---|---|
| ZnO | a = 3.24614 | 47.48 | 38 | 9.24 |
| c = 5.20184 | ||||
| M1ZO | a = 3.24984 | 47.618 | 43 | 10.30 |
| c = 5.20609 | ||||
| M3ZO | a = 3.24969 | 47.612 | 47 | 9.92 |
| c = 5.20594 | ||||
| M5ZO | a = 3.25228 | 47.722 | 56 | 9.01 |
| c = 5.20970 |
The Williamson–Hall (W–H) plots for each synthesised material are shown in Fig. 5. It is noteworthy that the Williamson–Hall relationship was used to determine the strain (ε) and the average crystal size (D). For the undoped ZnO sample, the approximate average crystal size was 38 nm for samples M1ZO, M3ZO, and M5ZO; the values were 43, 47, and 56 nm, respectively. The nucleation process and the increase in surface energy of the MXZO NPs may be responsible for this increase.22,23 Table 1 shows the crystallographic information of ZnO and MZO nanoparticles and the size of the crystallites. Incorporating Mg into ZnO nanoparticles appears to increase their crystal size. In addition, as shown in the table, the estimated strain value of MXZO is in the same order of magnitude as that of ZnO. The slight variation in ionic radii between Zn2+ (∼0.74 Å) and Mg2+ (∼0.72 Å) might be responsible for this result.24,25
Fig. 6 depicts SEM images of MXZO nanopowders. The samples show dispersed spherical aggregates with gradual increase in density as function of Mg loading.
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| Fig. 6 SEM images of (a) M1ZO, (b) M3ZO and (c) M5ZO showing micrometric spherical aggregates formed of nanoparticles. | ||
Fig. 7 shows TEM images of Mg-doped ZnO samples that have been heat-treated for two hours at 450 °C. As demonstrated, the magnesium-doped ZnO material has a prismatic shape with an average size in the range of 40–60 nm. The TEM images' descriptions of the nanoparticle sizes for M1ZO, M3ZO and M5ZO agree with the XRD results.
The isotherm shape provides information on pore size, which is typically categorised as micropore, mesopore, or macropore. Fig. 8 depicts the evolution of N2 adsorption–desorption isotherms for MXZO nanopowders. These isotherms were obviously type II, with a hysteresis of H4 type, according to the IUPAC classification of sorption isotherms20 (formerly designated as Brunauer's classification). At elevated relative pressure P/P0, the hysteresis of H4 type was due to the filling up of mesopores by capillary condensation, indicating a shape of pores that was flatter instead of cylindrical.
Particle size, pore characteristics, and BET surface area are listed in Table 2. BET surface area was found to be about 20 m2 g−1 for the Mg-doped Samples, and the highest value was obtained for the M1ZO sample.
| Nanoparticles | Pore diameter (nm) | Pore volume (cm3 g−1) × 102 | Surface BET (m2 g−1) |
|---|---|---|---|
| M1ZO | 24.2 | 14.5 | 20.07 |
| M3ZO | 18.3 | 11.5 | 19.51 |
| M5ZO | 12.2 | 6.3 | 17.92 |
Results showed decreased mean diameter of pores in the range (from 24.2 nm to 12.2 nm) and total volume (14.5 × 10−2 cm3 g−1 to 6.3 × 10−2 cm3 g−1) for samples with doping ratio ranging from 1% to 5%. Al Dahoudi et al.26 have reported a very similar trend of BET surface area for crystalline IZO nanopowder synthesized by hydrothermal treatment. They observed that the incorporation of indium ions into ZnO particles obviously affected both the growth of ZnO lattice and nanostructure. They further demonstrated an evolution of nanoparticle shape, i.e., rod-like pure ZnO progressively transformed to spherical, thereby leading to decreased nanoparticle size with increased indium-doping concentration.
The band gap energy is calculated based on the Tauc relation.27,28 Fig. 9 shows the plot of (αhν)2 vs. (hν), which gives the Eg values of all samples when the linear region is extrapolated to the x-axis. The estimated bandgap values are 3.22, 3.23 and 3.17 eV, respectively, for M1ZO, M3ZO, and M5ZO samples. The bandgap energy slightly increases for 1% and 3% Mg dopant and then decreases. Several studies29–32 reported an increase in the bandgap energy of ZnO with the addition of the Mg dopant. This broadening of bandgap is most likely attributed to the Moss–Burstein effect. Lu et al.33 reported that, if the Fermi surface was supposed spherical, the gap energy would be given as follows:
| Eg = E0g + ΔEBMg | (3) |
![]() | (4) |
is the reduced effective mass carrier. Indeed, an increase in carrier concentrations induces a shift of the Fermi level towards the conduction band and thus widens the energy band gap. The decrease in band gap for the M5ZO sample might be due to the presence of a secondary phase, which was further confirmed in XRD results. Similar behaviour was found by Kulandaisamy et al. and was attributed to the high number of defects.35
Fig. 10(a) shows the photoluminescence patterns of ZnO nanoparticles with different Mg loadings at room temperature. The photoluminescence spectrum consists of two bands: a narrow ultraviolet (UV) emission band at 380 nm and a broad visible emission band at 554 nm. The UV emission corresponding to an energy of 3.26 eV, very close to the ZnO bandgap, is due to band-to-band recombination, i.e. a transition of an electron from the conduction to the valence band. While the second emission in the visible range corresponding to an energy of about 2.24 eV has generated much discussion and is generally attributed to oxygen vacancies VO.36,37 The evolution of PL intensity with Mg content confirms that Mg has been successfully incorporated into the ZnO lattice. The intensity of the green emission band decreases with Mg content from 1 to 5 at%. This emission observed in ZMO samples is mainly due to oxygen vacancies, which are intrinsic defects in the lattice. This behaviour agrees well with the results of elemental analysis, where the increase in the Mg concentration corresponds to a decrease in the oxygen vacancy content. Oxygen vacancies enhance the adsorption and reaction of target gas molecules such as acetone on the ZnO surface. Therefore, the intensity of the green emission is related to the defect concentration, which in turn directly affects the gas sensing of ZnO-based materials. In addition, Gaussian fitting deconvolution to the broad visible band (Fig. 10(b)–(d)), reveals, in addition to the main pick corresponding to the oxygen vacancy, two more contributions at 477 nm (blue-green region) and 660 nm (red region) for all samples. Such emissions are known for ZnO samples and are mainly due to zinc vacancy (VZn) and oxygen interstitial (Oi) intrinsic defects.38 In fact, the presence of such defects can play a predominant role in enhancing the gas sensing properties, such as lowering the response/recovery time and improving the selectivity toward some gases.
The spectrum in Fig. 10(e) showed the high-resolution O 1s XPS of the M1ZO sample, which could be fitted by two peaks: one (marked by OC) located at 530.77 eV, considered to be caused by to the lattice O2− anion in the Zn–O bond, and another (marked by OV) at 532.30 eV, related to the oxygen vacancy defects.38 The relative concentration of oxygen vacancies (OV/(OV + OC)) can be estimated semi-quantitatively by its area ratio in the O 1s XPS curves, which could be expressed as 13% of OV and 87% of OC. The results confirm that the used protocol enhances oxygen vacancy formation, which is beneficial for the creation of active centres and strengthening the electrical conductivity of ZnO. Fig. 10(f) depicts the incorporation of Mg in the ZnO host matrix.
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| Fig. 11 Response of M1ZO, M3ZO, and M5ZO-based sensors at various operating temperatures to 40 ppm of acetone. | ||
Fig. 12(a) shows the sensor's resistance of M1ZO while exposed to acetone concentrations ranging from 5 to 40 ppm. Upon the injection of the target gas (C3H6O), the resistance of the sensors drops instantly. When the acetone supply is halted, the signal reverts to the original baseline levels. Consequently, the M1ZO sensor displays a reversible n-type behaviour. The change in electrical resistance is attributed to gas adsorption and desorption occurring on the surface of the ZnO layer.40 Fig. 12(b) illustrates how the response of the three sensors steadily rises as the acetone concentration rises. This validates the M1ZO sensor, which thus appears as a promising sensor for applications in the real world.
Response and recovery times are two key characteristics of gas sensors in practice. Fig. 12(c) shows the response and recovery times of the M1ZO-based sensor when exposed to 5–40 ppm acetone gas at an operating temperature of 300 °C. It can be seen that the response time decreases significantly with increasing acetone concentration, but the recovery time is the opposite; it decreases with decreasing acetone concentration. Because more gas molecules are adsorbed more quickly at higher concentrations, the reaction time diminishes while the recovery time increases because it takes longer to reestablish the baseline after more adsorbed molecules have been desorbed. The measured reaction and recovery times are short. In fact, in the C3H6O concentration range of 5 to 40 ppm, the reaction time is less than 8 seconds, and the recovery time is less than 6 minutes (min). To evaluate the repeatability of the examined sensor, 40 ppm of C6H3O gas was injected multiple times consecutively into the test chamber, maintaining 300 °C as the operating temperature for M1ZO, M3ZO, and M5ZO. The test results obtained were presented in Fig. 12(d). This figure also demonstrates that reproducibility was assessed. It is evident that a minor variation in response is noted during the 5-cycle test. This behaviour demonstrates the strong response and remarkable repeatability of the M1ZO sensor. The gas sensing principle of resistive sensors made from semiconductor oxides mainly relies on the alterations in the sensor's resistance when exposed to target gases, attributed to the chemical interactions that occur between adsorbed oxygen ions and gas molecules. When the n-type semiconductor oxide sensors come into contact with synthetic air, oxygen molecules are adsorbed onto their surface layers. The oxygen molecules that are adsorbed take away electrons from the film's surface conduction band, leading to the creation of negatively charged oxygen ions. The types of chemisorbed oxygen ions are identified based on the operating temperature. The subsequent equations encapsulate the process of oxygen ion formation. Initially, reactive oxygen species including O2−, O2−, and O− are adsorbed onto the ZnO surface at high temperatures. It is important to mention that the chemisorbed oxygen species are highly influenced by temperature. The kinematics of the reaction can be outlined as follows:41,42
| O2(gas) ⇄ O2(ads) | (5) |
| O2 (ads) + e− ↔ O2−(ads) T ≤ 100 °C | (6) |
| O2− (ads) +e− ⇄ 2O− (ads) 100 ≤ T ≤ 300 °C | (7) |
| O− +e− ⇄ O2− (ads) T ≥ 300 °C | (8) |
The conductivity of ZnO NPs increases as reducing acetone vapour enters the test chamber due to electron exchange between the ion-adsorbed species and the ZnO itself.43 The interaction of acetone with ionic oxygen species can be characterised as follows:44,45
| CH3COCH3 + O− → CH3C+O + CH3O− + e− | (9) |
| CH3C+O → C+H3 + CO | (10) |
| CO + O− → CO2 + e− | (11) |
Selectivity is one of the key parameters of gas sensors and describes the ability of the sensor to respond to a specific gas in the presence of other interfering gases. M1ZO, the sensor with the best performance, was subjected to selectivity measurement in order to effectively concentrate on the most promising sample. Fig. 12(e) shows some sensor tests of the M1ZO at 300 °C for different dangerous gases (acetone (C3H6O), ammonia (NH3), carbon dioxide (CO2), hydrogen sulfide (H2S) and sulfur dioxide (SO2)). Although M1ZO was exposed to high concentrations of NH3 (800 ppm) and CO2 (80
000 ppm), it appears that, despite the excellent sensing performance of the Mg-doped ZnO sensor, the selectivity for acetone is relatively high. According to previous studies, the improved performance of the sensor based on a synthesised M1ZO sample against acetone gas is associated with various factors such as high surface roughness, small particles, stacking defects, and the amount of oxygen vacancies. XRD results showed an increase in the size of M1ZO particles compared to undoped ZnO NPs. Therefore, the improved gas sensor performance cannot be attributed to the small particle size. UV-Vis studies showed an increase in the intensity of the absorption bands, which led to an increase in the carrier concentration. The higher number of carriers can be considered the reason for the stronger gas response.
The sensor performance was compared with the latest studies based on ZnO-doped nanostructures. Table 3 shows the comparison of the gas sensing properties of M1ZO NPs with other sensing nanomaterials for acetone; only the metrics available in the original articles are included. As it is shown, M. Ben Amara et al.46 synthesised a sensor based on Al-doped ZnO NPs with notable sensing properties to acetone. Even the sensor exhibited high response, but it worked at a relatively high concentration of acetone (50 ppm).47 On the other hand, Liu et al.48 used high working temperature (about 360 °C) for detection of 100 ppm acetone (high concentration). The Co-doped ZnO-based sensor shows relatively high response (16) but at higher detection and higher operating temperature. Conversely, M. H. Darvishnejad et al.49 succeed to synthesize Mn/ZnO based sensor. The sensor was used for the monitoring of acetone (300 ppm) and showed a relatively low response (29), compared to gas concentration, at relatively higher operating temperature (300 °C). Focusing on other cited examples, which used the operating temperature of 320 °C, the synthesised Sn-doped ZnO sensor considered by Y. Al Hadeethi et al.50 shows a considerably lower sensitivity (5.5). At 1000 (40*25) ppm of acetone, the Ag–ZnO sensor45 exhibited a response of approximately 71, which is about 3.56 times higher than the response of 19.9 (this work). Despite that, the presented M1ZO sensor shows a higher response and lower detection limit (≤5 ppm) at 300 °C. In addition, the sensing layer was elaborated and deposited by an easier and faster method. So, the optimised 1% Mg doping, which adds oxygen vacancies and structural flaws that serve as active sites for acetone adsorption, as well as an adjusted form that boosts effective surface area, is responsible for the increased sensitivity of M1ZO. Finally, due to the simple elaboration process and excellent gas-sensing properties, the M1ZO sensor is regarded as a strong contender for effective and high detection of acetone.
Supplementary information is available. See DOI: https://doi.org/10.1039/d5ra05067g.
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