Organic–inorganic hybrid halide perovskites for field-effect transistors

Abstract

Organic–inorganic hybrid halide perovskites exhibit exceptional properties, including prolonged charge carrier lifetimes, high photoluminescence quantum efficiency, and remarkable defect tolerance, demonstrating significant potential in optoelectronic applications like photoelectric detectors, light-emitting devices, and solar cells. Despite the high intrinsic carrier mobilities, their application in field-effect transistors (FETs) has not been well investigated. Three critical challenges currently hinder the development of high-performance hybrid halide perovskite FETs: ion migration, bulk/interfacial defects, and material instability. In the past few years, the application of halide perovskites as FET channel materials has been actively advancing, not only for the development of high-performance FETs showing stunningly improved mobilities, but also for fundamental investigation of charge transport mechanisms and structure–property relationships. This article comprehensively reviews recent progress in three-dimensional (3D) and two-dimensional (2D) organic–inorganic hybrid halide perovskite-based FETs. We discuss achievements and current challenges regarding device performance and stability issues of such hybrid materials and provide a general perspective on breaking through their bottlenecks and exploring future directions.