DOI:
10.1039/D5NR90044A
(Correction)
Nanoscale, 2025,
17, 7511-7511
Correction: Simulation of the resistance switching performance and synaptic behavior of TiO2-based RRAM devices with CoFe2O4 insertion layers
Received
3rd March 2025
, Accepted 3rd March 2025
First published on 12th March 2025
Abstract
Correction for ‘Simulation of the resistance switching performance and synaptic behavior of TiO2-based RRAM devices with CoFe2O4 insertion layers’ by Fei Yang et al., Nanoscale, 2024, 16, 6729–6738, https://doi.org/10.1039/D3NR05935A.
The authors regret that in the original article, eqn (6), (7), (9) and (10) in section 2.1 were given incorrectly. The correct versions of equations (6), (7), (9) and (10) are shown below. |  | (6) |
|  | (9) |
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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