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Correction: Simulation of the resistance switching performance and synaptic behavior of TiO2-based RRAM devices with CoFe2O4 insertion layers
Fei
Yang
*,
Bo
Hu
,
Zijian
He
,
Bingkun
Liu
,
Shilong
Lou
,
Duogui
Li
and
Wentao
Wang
School of Integrated Circuits, Anhui University, Hefei 230601, China. E-mail: feiyang-0551@163.com
First published on 12th March 2025
Abstract
Correction for ‘Simulation of the resistance switching performance and synaptic behavior of TiO2-based RRAM devices with CoFe2O4 insertion layers’ by Fei Yang et al., Nanoscale, 2024, 16, 6729–6738, https://doi.org/10.1039/D3NR05935A.
The authors regret that in the original article, eqn (6), (7), (9) and (10) in section 2.1 were given incorrectly. The correct versions of equations (6), (7), (9) and (10) are shown below.
 | (6) |
| ∇·σ∇ψ = 0 | (7) |
 | (9) |
| −∇·Kth∇T = σ|∇ψ|2 | (10) |
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
| This journal is © The Royal Society of Chemistry 2025 |