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Correction: Simulation of the resistance switching performance and synaptic behavior of TiO2-based RRAM devices with CoFe2O4 insertion layers

Fei Yang *, Bo Hu , Zijian He , Bingkun Liu , Shilong Lou , Duogui Li and Wentao Wang
School of Integrated Circuits, Anhui University, Hefei 230601, China. E-mail: feiyang-0551@163.com

Received 3rd March 2025 , Accepted 3rd March 2025

First published on 12th March 2025


Abstract

Correction for ‘Simulation of the resistance switching performance and synaptic behavior of TiO2-based RRAM devices with CoFe2O4 insertion layers’ by Fei Yang et al., Nanoscale, 2024, 16, 6729–6738, https://doi.org/10.1039/D3NR05935A.


The authors regret that in the original article, eqn (6), (7), (9) and (10) in section 2.1 were given incorrectly. The correct versions of equations (6), (7), (9) and (10) are shown below.
 
image file: d5nr90044a-t1.tif(6)
 
∇·σψ = 0(7)
 
image file: d5nr90044a-t2.tif(9)
 
−∇·KthT = σ|∇ψ|2(10)

The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.


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