Open Access Article
Elif Unsal
*ab,
Alessandro Pecchia
c,
Alexander Croy
b and
Gianaurelio Cuniberti
ade
aChair of Materials Science and Nanotechnology, TU Dresden, 01062, Dresden, Germany. E-mail: elif.uensal@uni-jena.de; gianaurelio.cuniberti@tu-dresden.de
bInstitute of Physical Chemistry, Friedrich-Schiller-Universität, 07743, Jena, Germany
cCNR-ISMN, Strada Prov.le 35 d, n. 9 00010 Montelibretti, Rome, Italy
dDresden Center for Computational Materials Science (DCMS), TU Dresden, 01062, Dresden, Germany
eCluster of Excellence CARE, TU Dresden and RWTH Aachen, Germany
First published on 3rd October 2025
Graphynes, a class of two-dimensional carbon allotropes, exhibit exceptional electronic properties, similar to graphene, but with intrinsic band gaps, making them promising for semiconducting applications. The incorporation of acetylene linkages allows for systematic modulation of their properties. However, the theoretical characterization of graphynes remains computationally demanding, particularly for electron–phonon coupling (EPC) analyses. Here, we employ the density functional tight binding method within the DFTBEPHY framework, providing an efficient and accurate approach for computing EPC and transport properties. We investigate the structural, mechanical, electronic, and transport properties of graphynes, comparing transport calculations using the constant relaxation-time approximation and the self-energy relaxation-time approximation (SERTA) alongside analytical models based on parabolic- and Kane-band approximations. For graphyne, the SERTA relaxation time is 0.63 (1.69) ps for holes (electrons). In graphdiyne, the relaxation time is 0.04 (0.14) ps for holes (electrons). While the hole mobilities in graphyne are on the order of 103 cm2 V−1 s−1, the electron mobilities reach up to 104 cm2 V−1 s−1. In graphdiyne, the mobility values for both types of charge carriers are on the order of 102 cm2 V−1 s−1. The phonon-limited mobilities at room temperature in graphyne fall between those of graphene and MoS2, while in graphdiyne, they are comparable to those of MoS2.
Incorporating acetylene linkages in graphynes provides a versatile approach to tailoring their properties. The adjustable length of such acetylene chains systematically modifies the structural arrangement and influences the material's electronic, mechanical, and transport properties.1,4 This tunability parallels the customizable architectures of covalent organic frameworks (COFs)7–10 and 2D Fused Aromatic Networks (FANs),11 where rigid aromatic backbones enable precise control over porosity and functionality. Such structural versatility makes these materials promising for applications also in catalysis and energy storage.11–13 The uniform distribution of nanoscale pores also makes these materials highly suitable for nanoelectronics, including molecular sieving for gas separation,14 water desalination,15 and biomedical usage such as cholesterol extraction.16
The theoretical characterization of these materials presents a significant challenge, primarily due to their large unit cells. This complexity demands substantial computational resources, especially when analyzing electron–phonon couplings (EPCs), which are essential for understanding their electronic transport properties.17,18 Using semi-empirical methods such as density functional tight binding (DFTB)19 instead of density functional theory (DFT) offers a practical solution. DFTB effectively reduces the computational demands of DFT, providing a reasonable balance between efficiency and accuracy.20,21 Here, we employed the DFTBEPHY Python package, which is developed to compute EPCs within a DFTB framework.22 It enables the calculation of transport properties within the Boltzmann transport framework in the relaxation-time approximation, integrating these calculations into an efficient computational workflow. DFTBEPHY offers a promising approach for addressing the computational challenges associated with large and complex systems, enhancing the accessibility of EPCs and transport property analyses.
In addition to computational approaches, analytical models provide valuable insights into charge carrier transport. While the constant relaxation-time approximation (CRTA) is often used for its simplicity, it does not always capture non-parabolic effects that become significant at higher carrier concentrations.18 The Kane-band model offers a more accurate representation of charge carrier mobility in such cases.23 Although these analytical models may not always achieve the accuracy of computational methods, they offer a fast and efficient way to estimate mobilities and conductivities in complex materials. This makes them particularly useful for preliminary studies and identifying trends before engaging in more demanding simulations. These analytical approaches provide a comprehensive framework for understanding charge transport in complex materials.
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| Fig. 1 Optimized geometries of the monolayers of (a) graphene, (b) graphyne (GY) and (c) graphdiyne (GDY). The red rhombi represent the unit cells. | ||
From the acoustic branches of the phonon dispersions, the stiffness tensor elements C11 and C12 can be extracted.25 Due to the honeycomb lattice structure, they are related to the sound velocities of the LA and TA modes via C11 = ρvLA2 and C12 = ρvTA2, where ρ is the mass density and the sound velocities are given by the slope of the respective branch at Γ. The in-plane elastic properties, 2D Young's modulus Y2D, bulk modulus B2D and shear modulus μ2D, of the structures were calculated from these stiffness constants as in ref. 26. The agreement of the DFTB results with DFT calculations is again quite good, as seen in Fig. 2(b) (and the calculated values can be found in Table 1 in the SI). The in-plane stiffness of graphyne sheets decreases rapidly due to the introduction of acetylene linkers. Although triple bonds in acetylene are stronger than aromatic bonds, their association with weaker single bonds leads to a reduction in strength as the number of increasing acetylene linkages.27 In this context, we observe a similar trend, with the in-plane stiffness of GDY being lower than that of graphene. This trend is also observed for bulk modulus B2D, and shear modulus μ2D.
The band-gap value of GY calculated with DFTB is 1.38 eV, which is comparable to the value predicted within the extended Hückel theory and with an empirical correction which is 1.2 eV.4 The gap values obtained with these methods are ≈0.9 eV higher than those obtained with bare DFT. This discrepancy likely arises from using a GGA-PBE functional, known to underestimate band gaps, particularly in systems with delocalized electrons.28 A similar trend is observed for GDY, where PBE predicts a band gap of approximately 0.5 eV, while DFTB predicts ≈1.5 eV. The band gap values obtained by DFT for GY and GDY are in good agreement with the literature.5,29
For the effective mass calculation for DFT bands, we used EFFMASS Python package.30 In GY, DFT calculations indicate that the effective masses of electrons and holes are smaller in the M–K direction (me = 0.08m0, mh = 0.09m0) compared to the M–Γ direction (me = 0.20m0, mh = 0.22m0). This anisotropy arises since the M-point lies at the zone edge, where the reduced symmetry31 results in direction-dependent band curvature around band edge in GY. Our results align well with the results reported in ref. 5. On the other hand, in GDY, the effective masses do not vary with direction (me = mh = 0.09m0 for the primary bands, while me = mh = 0.07m0 for the secondary bands). In both materials, the effective masses from DFTB bands show minimal directional variation, a consequence of the isotropic nature of the band structure in both directions. In GY, the effective masses from the DFTB band structure exhibit slight anisotropy between the M–K (me = 0.24m0 and mh = 0.26m0) and M–Γ direction (me = 0.30m0 and mh = 0.32m0). In GDY, the primary bands have isotropic effective masses in both directions: me = 0.28m0 and mh = 0.32m0. For the secondary bands, the effective masses can also be assumed to be isotropic: me = 0.19m0 and mh = 0.21m0 in the M–K direction and me = 0.18m0 and mh = 0.20m0 in the M–Γ direction. Although the effective masses obtained from DFTB are larger than those from DFT, both methods consistently indicate isotropic behaviour with respect to directional dependence. The effective mass values are also given in Table 1 in the SI.
In Fig. 5, the scattering rates for electrons and holes in GY are shown as a function of energy. When all scattering is included, the relaxation times for electrons and holes are 1.69 and 0.63 ps, respectively (see Table 1). The calculated values for electrons and holes are 54% and 21% higher than those in the literature, respectively.32 The contribution to the scattering around the band edge for the holes is primarily from acoustic phonon scattering (see Fig. 5(a)). The scatterings from acoustic phonons remain constant over an energy range of 0.2 eV. However, moving further into the valence band, we see that scattering from optical phonons becomes significant. As for electrons, the contribution from optical phonons is roughly three times larger than that from acoustic phonons. Similar to the holes, acoustic phonon scattering remains relatively constant within the conduction band. The scatterings from optical phonons increase significantly as we move deeper into the band. We compared the charge carrier scatterings in GY and GDY in Fig. 7 in the SI. In GDY, degeneracy is present in both valence and conduction bands at the Γ-point and the scattering rates were calculated by considering these degenerate bands. The relaxation time values provided in Table 1 were calculated using Matthiessen's rule, which combines the individual contributions from each band, expressed as 1/τ = 1/τband1 + 1/τband2.
In this analysis, we included only the bands lying closest to the band edges within the selected chemical potential window at room temperature, as these dominate charge transport under the conditions studied.
When the chemical potential is at the band edge, the total scattering for the electrons is approximately 2.5 times larger than that of holes. Acoustic phonon scattering rates in GDY display a similar trend, remaining constant within the bands for both electrons and holes, whereas optical phonon rates show a notable energy dependency. The total scattering rates in GDY are one order of magnitude larger than those in GY.
Carrier mobilities were determined using the relation μ = σ/en, where σ represents the electrical conductivity, n is the carrier density, and e is the electron charge. The calculations were performed with fixed temperature and the chemical potential. Fig. 6 shows the corresponding mobilities as a function of carrier concentrations. We find SERTA mobilities for electrons and holes in the GY reaching approximately 9.6 × 103 (≈×104) and 3.5 × 103 cm2 V−1 s−1, respectively. The values in the literature for electrons and holes are around 2 × 104 and 4 × 103, respectively.32 For GDY, mobility calculations were performed accounting for degenerate bands, yielding approximate values of 7.4 × 102 cm2 V−1 s−1 for electrons and 4.9 × 102 cm2 V−1 s−1 for holes. In comparison, the mobility values reported in the literature are higher, at ≈2 × 105 cm2 V−1 s−1 for electrons and ≈2 × 104 cm2 V−1 s−1 for holes, respectively.29 Notably, literature values for electrons are three orders of magnitude higher, while those for holes are two orders of magnitude higher. This discrepancy may be attributed to using the zeroth-order deformation potential theory in ref. 29, which considers only the deformation potentials for a single conduction band and a single valence band in GDY.
As seen in Fig. 6, the analytical CRTA results, under the assumption of parabolic bands, exhibit density-independent behavior as expected in 2D. Furthermore, the analytical results from the Kane-band model reasonably align with those from the CRTA and provide a more accurate representation of charge carrier mobility compared to the parabolic-band model. The Kane model shows a good agreement, especially for the holes in GY, consistent with the scattering rates. Hole mobilities in GY remain constant over a broader energy range at lower carrier densities, with scattering rates similarly exhibiting constancy over a large energy range. The deviation between SERTA and Kane-mobilities for electrons in GY becomes apparent at higher carrier densities. A similar trend is also observed for carriers in GDY; however, the deviation arises at lower carrier densities compared to GY. In addition, we calculated the analytical Kane-mobilities using energy-dependent relaxation times τ(ε). To have a smooth and continuous representation of the scattering rates as a function of energy, we applied linear interpolation to the scattering rates calculated with DFTBEPHY. The Kane-mobilities obtained with τ(ε) lie between the CRTA and the SERTA results. Thus, incorporating energy-dependent scattering rates provides a more accurate estimation of mobilities in a material, yielding more representative values. This approach enables an analysis of carrier transport properties, offering deeper insights into the interplay between energy-dependent scattering and charge carrier mobility. In Table 1, we represent effective relaxation-time values determined as the ratio of the maximum SERTA-mobilities to the maximum mobilities obtained with other models. In the limit of low density, these effective relaxation times values agree with SERTA results.
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| Fig. 7 Illustration of the workflow for calculating electron–phonon couplings and transport properties using the DFTBEPHY code. | ||
The calculation of the EPC in DFTBEPHY involves multiple steps. The first step is to start with creating a super-cell, which is analogous to the way utilized in PHONOPY.33,34 DFTBEPHY uses the DFTB+ (ref. 35) code to obtain the real-space Hamiltonian and Overlap matrices,
and
, where
denotes the cell index, and s is the sublattice index of each atom. These matrices are then Fourier-transformed with respect to the cell indices, yielding
and
.
The electronic properties are necessary for EPC calculations. After solving a generalized eigenvalue problem for each k-point, the electronic band structure
and the corresponding eigenstates
are obtained,
![]() | (1) |
If required, the band velocities
can also be calculated using the following equation,
![]() | (2) |
In the second step, each atom in the super-cell is displaced. Then, in a finite-difference scheme, the real-space gradients of the Hamiltonian and overlap matrices are evaluated at the unperturbed positions. The first-order change of
and
is calculated by noting that the two-center matrix elements depending on the distance vector, not individual positions. Then the gradients are also Fourier transformed yielding
and
.
EPC calculations also require phonon frequencies and eigenvectors. The phonon dispersion is determined from the dynamical matrix
,33,34
![]() | (3) |
is the phonon wave vector, α and β denote the Cartesian coordinates, and
are the harmonic force constants. The phonon frequency
and eigenvectors
are determined by solving the eigenvalue equation of the dynamical matrix,
![]() | (4) |
is the eigenvector of atom s in phonon branch λ, and
is the corresponding phonon frequency.
Finally, the EPC matrix is calculated from the expression
![]() | (5) |
In addition to the electronic structure and the phonons, the calculation of EPCs requires the computation of the (real-space) gradients of the Hamilton and the overlap matrix. Those can be obtained via a finite displacement method. For more detailed information about the derivation and the calculation scheme, please see ref. 22.
![]() | (6) |
The partial decay rate
is given in terms of the electron–phonon coupling matrix
and the occupation factors of the involved states,
![]() | (7) |
Here, f0(ε) and n(ω) denote the Fermi function and the Bose–Einstein distribution, respectively, which characterize the occupation of electronic states and the phonons in equilibrium. Within DFTBEPHY the partial decay rates are computed using a Gaussian smearing function with constant width instead of the δ-functions. The integral over the Brillouin zone in eqn (6) is replaced by a sum over q-points.
![]() | (8) |
and
are the charge carrier group velocities in the directions α and β, which can be calculated via eqn (2). The charge carrier densities nc at a given temperature T and a chemical potential μ can be defined as
![]() | (9) |
![]() | (10) |
![]() | (11) |
In the Kane model, the bands are flattened, and the density of states increases by a factor of (1 + 2αε) compared to the parabolic approximation. For the charge carrier densities, we obtain
![]() | (12) |
![]() | (13) |
Spin–orbit coupling was not included in this study since it is very weak for carbon38 and has negligible influence on band dispersion and charge transport near the Fermi level.
In parallel, we performed DFT calculations by using the Vienna ab initio Simulation Package (VASP)39,40 for geometry optimization and band structure calculations. The Perdew–Burke–Ernzerhof (PBE)41 form of GGA was adopted to describe electron exchange and correlation. The energy cut-off for plane-wave expansion was set to 525 eV. The Gaussian smearing method was employed for the total energy calculations and the width of the smearing was chosen as 0.05 eV. The energy difference between successive electronic steps was set to 10−8 eV. For the primitive unit cells of GY and GDY, 24 × 24 × 1 and 21 × 21 × 1 Γ-centered k-point samplings were used, respectively.
Vibrational properties are investigated by using the small displacement method as implemented in PHONOPY code.33,34 To obtain force constants, 7 × 7 × 1 and 5 × 5 × 1 supercells were generated for graphyne (GY) and graphdiyne (GDY), respectively. Atoms were displaced by 0.001 Å. Tolerance to find the symmetry of crystal structure was set to 10−4 for DFTB calculations and 10−5 for DFT calculations.
We calculated the scattering rates within the SERTA (see section 3.2) by setting the chemical potentials to the band edges at 300 K. A 16 × 16 × 1 k-mesh and a 100 × 100 × 1 q-mesh were employed for the calculations. For the linear interpolation of the scattering rates (for the analytical Kane-mobilities), we used the interp1d function from the SCIPY library.
For the conductivity calculations, a 150 × 150 × 1 k-mesh and a 100 × 100 × 1 q-mesh were used. For GY, the k-vector was shifted at the M-point (band edge) and only two bands were considered. For GDY, the k-vector was located at the Γ-point (band edge). In this case, four bands were considered. In the calculations for both materials, a chemical potential range of 0.3 eV was employed, starting from slightly below (above) the conduction (valence) band-edge and extending into the respective bands. In our calculations, contributions from all electronic bands were taken into account in the evaluation of electron–phonon couplings, scattering rates, conductivities, and mobilities.
For GY, the relaxation-times calculated within SERTA are 0.63 (1.69) ps for holes (electrons). In the case of GDY, the relaxation times are 0.04 ps and 0.14 ps for holes and electrons, respectively. We find that for holes, scattering rates near the band edge are mainly due to acoustic phonons, while for electrons, optical phonon scattering is the dominant mechanism. Electron scattering rates in GY are approximately 6 × 1011 s−1, which is almost the same as intravalley electron scattering rates in graphene 5 × 1011 s−1.45 In contrast, GDY has electron scattering rates of around 7 × 1012 s−1, much closer to electron scatterings in MoS2 (≈1013 s−1).46
In the parabolic-band model, analytical mobility calculations based on the CRTA remain independent of carrier concentration. Alternatively, the Kane-band model provides a more accurate description of mobility. The hole mobilities in GY, calculated with DFTBEPHY, are on the order of 103 cm2 V−1 s−1, while the electron mobility values reach up to 104 cm2 V−1 s−1. In GDY, the mobility values for both types of charge carriers are on the order of 102 cm2 V−1 s−1. The phonon-limited mobilities of electrons in GY at room temperature range between those of graphene (≈105 cm2 V−1 s−1)45,47 and MoS2 (≈400 cm2 V−1 s−1).46 On the other hand, the electron mobilities in GDY are of the same order of magnitude as those in MoS2.
The unique properties of GY and GDY, including their tunable porosity, direct band-gaps, and relatively high charge carrier mobilities, render them highly promising for future applications in next-generation nano- and optoelectronics, for energy storage, and for sensing technologies. Further research into their synthesis, stability, and large-scale production will be crucial for exploiting their full potential.
The results presented here point to various directions for the future development of DFTBEPHY. Extensions such as the application of MRTA for a more accurate treatment of scattering processes and the implementation of long-range electron–phonon interactions to characterize polar materials will broaden its methodological scope. Further developments towards lower-dimensional systems48 and van der Waals heterostructures can be combined with improved parallel performance and integration into high-throughput workflows, in order to increase the applicability of DFTBEPHY to a broader class of materials.
Supplementary information (SI) is available. See DOI: https://doi.org/10.1039/d5nr02989a.
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