Operando observation of gate defects in quantum dot-based field effect transistors

Abstract

Colloidal nanocrystals are now widely explored for their integration into more advanced electronic and optoelectronic devices. Among the key components enabling this progress is the field-effect transistor (FET). While widely used as a phototransistor, combining both light absorption and gate-induced current modulation, its primary role remains as a tool for extracting material parameters. The electrical output from FETs serves as the main measurement to probe carrier density and mobility in nanocrystal films. However, such an approach suffers from two main flaws: it relies on modeling to link the electrical output to material properties; and second, it can be affected by the presence of defects. Here, we use scanning photoemission microscopy to assess the energy profile in such nanocrystal-based FETs. This method is used to quantify the impact of a local gate defect, which appears to be quite significant, as its impact is stronger and has longer-range effects than the conventional gate operation. We also demonstrate that the method is effective in determining the process at the origin of electrical breakdown. Overall, the method appears well suited to bridge the gap between the material scale and the obtained electrical output and to quantify the impact of potential deviations from ideal behavior.