Improving the luminescence performance of the near-infrared phosphor La3SnGa5O14:Cr3+,Yb3+via energy transfer and its application in fingerprint detection and night vision

Abstract

Near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) have recently emerged as a significant research focus. However, NIR phosphors still face challenges such as narrow emission bands and poor thermal stability. In this work, a series of broadband NIR La₃SnGa₅O₁₄(LSGO):Cr³⁺,Yb³⁺ phosphors were obtained using a high temperature solid-state method. The luminescence performance of the phosphors can be greatly improved by the energy transfer of Cr³⁺ → Yb³⁺, for example, the full width at half maximum (FWHM) can be expanded to 386 nm, and the thermal stability can be enhanced (82.5%@423 K). The NIR LEDs fabricated by combining these phosphors with blue LED chips demonstrated potential applications in fingerprint detection and night vision. This work presents a novel approach for developing high-performance NIR-emitting phosphor materials.