Mohammad Awwal Adeshina , Abdulazeez Mustapha Ogunleye , Hakseon Lee , Hyunmin Kim , Gunwoo Kim and Jonghoo Park
First published on 6th October 2025
Inorganic halide perovskite single crystals have garnered significant interest due to their outstanding optical and electrical properties, making them strong candidates for a wide range of optoelectronic applications. However, conventional crystal growth techniques, such as the Bridgeman, antisolvent, and inverse temperature crystallization (ITC) methods, often requires complex procedures, high temperatures, and prolonged processing times. Here, we present a straightforward and efficient synthesis method for high-quality CsPbBr3 perovskite single crystals based on ultraviolet (UV) light irradiation. This method employs UV light to provide the energy required for the CsPbBr3 crystallization process, which includes molecularization, ionization and nucleation. The single crystals synthesized using the UV method (UV-grown) exhibit an average carrier lifetime of 17 ns (twice that of ITC-grown counterparts) and a hole mobility of 197 cm2∙V-1∙s-1 (a six-fold increase over ITC-grown counterparts). Our method not only provides enhanced optoelectronic properties but also simplifies the crystal synthesis process. This advancement paves the way for the scalable production of large-size CsPbBr3 single crystals for in-depth fundamental studies and a wide range of optoelectronic applications.