Open Access Article
Lucas
Fine
ab,
Maths
Karlsson
a,
Itai
Panas
a and
Michael Marek
Koza
*b
aDepartment of Chemistry and Chemical Engineering, Chalmers University of Technology, Göteborg, 412 96, Sweden
bInstitut Laue Langevin, 71 avenue des Martyrs, Grenoble, 38042, France. E-mail: koza@ill.fr
First published on 24th September 2025
Mixed hydride–electronic conductors are technologically important materials, but the mechanism of hydride-ion diffusivity is generally not fully understood. The diffusivities of hydride-ions and oxygen vacancies are closely related because hydride-ions are accommodated in oxygen vacancies, and a neighbouring oxygen vacancy is required for the inter-site migration of a hydride-ion. Here, we investigate the impact of electron localization in the hydride-ion-accepting oxygen vacancy on the inter-site hydride-ion migration dynamics in the perovskite-type oxyhydride BaTiO3−2xHx□x (where □ denotes oxygen vacancies) using density functional theory (DFT). Supercell calculations were designed to model two (
), one
, and zero
electrons localized in the hydride-ion-accepting site and correspondingly, zero, one, and two electrons delocalized in the conduction band formed from the Ti4+ 3d orbitals. It is found that the trapping of electrons causes the activation energy for inter-site migration to increase from 0.29 eV for
, to 0.39 eV for
, to 0.60 eV when
turns into
during the migration, and to 0.83 eV for
. In an analogous way, the mobility of oxygen vacancies becomes increasingly hindered with increased electron occupation in the vacancies. This suggests that the tailoring of the degree of electron localization by, e.g., bandgap engineering or the introduction of electron trapping impurity states may be effective in tuning the hydride-ion conductivity in oxyhydrides, not limited to BaTiO3−2xHx□x.
The H− conductivity in BaTiO3−x−yHx□y occurs, in part, through the hopping (migration) of H− into adjacent vacant sites in the O2− sub-lattice (VO), as demonstrated by both experimental7 and theoretical studies.4,8 Therefore, the formation of percolation pathways enabling H− conduction throughout the material inherently depends on the diffusion of
within the O2− sub-lattice, which occurs via the migration of adjacent O or H− into the
. The electron conductivity, on the other hand, is due to the presence of H− and/or
in the
sub-lattice, which act as n-type dopants of the empty 3d states of titanium (Ti).9,10 When O2− is replaced by H−
or when a
forms, the valence electrons originally associated with
, referred to as doping electrons, can adopt two possible states. They may either localize in the
or near a Ti4+ ion, as an electron polaron, which results in a singly charged defect
or a neutral defect (
). This implies a semiconductor-like behavior of the material. Alternatively, they may delocalize across the Ti4+ sub-lattice and populate the conduction band (CB) as a band state, which results in a doubly charged defect
. This implies a metal-like behaviour of the material.11–14
Previous studies of BaTiO3−x−yHx□y with y in the range of 0.1–0.31, combining DFT with experimental techniques such as inelastic neutron scattering (INS)15 and nuclear magnetic resonance (NMR),16 showed that the doping electrons form a band state. However, in ref. 15 it is shown that the energy difference between the two scenarios, electron polaron vs. band state, is low and lies in the range of −0.15 to 0.12 eV, depending on the H− concentration and the DFT settings used. Similarly, in ref. 16 it is concluded that band states are prevalent but the existence of polarons cannot be ruled out. Therefore, the conclusion that the doping electrons always form band states cannot simply be generalized to all compositions of BaTiO3−x−yHx□y (x, y < 0.6). In fact, both metal-like and semiconductor-like behaviors have been reported in various experimental studies.1,9,11,17
Crucially, as observed in various transition metal oxide cathode materials, such as LiV3O8,18 LiV2O5,19 and LiFePO4,20 electron polarons can significantly influence the activation energy for ion conductivity. Nonetheless, for BaTiO3−x−yHx□y, the H− and electron conductivities have, to the best of our knowledge, been studied only independently, and the localization effects of the doping electrons were not explicitly taken into account.4,8,21,22 As a result, the influence of electron localization on H− conductivity remains unclear. Yet, elucidating the mechanisms underlying mixed hydride–electronic conductivity in BaTiO3−x−yHx□y is essential for the rational design of new oxyhydrides and related technologies. Notably, electron localization engineering has been used to enhance catalytic activity, such as in CO2 reduction, through dopant incorporation and nanostructuring.23–25 These studies highlight the potential of controlling electron localization in the design of advanced catalysts.
Towards this aim, we build upon previous DFT studies by explicitly modeling the localization of doping electrons in BaTiO3−2xHx□x and assessing its effect on H− migration. We consider three cases with two (
), one
, and zero
electrons localized in the hydride-ion-accepting site and correspondingly, zero, one, and two delocalized electrons in the conduction band. For each, we calculate the activation energy (Ea) for H− migration to a neighboring oxygen vacancy. Rather than attempting to predict whether the doping electrons are localized or delocalized in BaTiO3−2xHx□x, our aim is to establish a physical understanding of how their degree of localization influences H− transport behavior.
inserted next to each other, which correspond to BaTiO2.75H0.125□0.125 and BaTiO2.93H0.037□0.037. Another 2 × 2 × 2 supercell of composition BaTiO2.75H0.125□0.125 was arranged in a channel geometry in such a way that the H− and the
form a linear chain along the crystallographic a axis. Additionally, the hydrogen-free but oxygen-vacancy containing material BaTiO2.75□0.25 and the fully stoichiometric material BaTiO3 were modeled using a 2 × 2 × 2 supercell. All supercells are depicted in Fig. S1 of the Supporting Information (SI). Brillouin zones were sampled over Monkhorst–Pack grids of 5 × 5 × 5 points for the 2 × 2 × 2 supercells and 3 × 3 × 3 points for the 3 × 3 × 3 supercell. Spin-polarized calculations were conducted, where a cut-off energy of 500 eV was applied to the plane wave basis set and electronic structures were converged to energy changes less than 10−7 eV. Prior to calculating the electronic properties and Ea, every structure was optimized to relax inter-atomic forces below 10−4 eV Å−1. Minimum energy paths and Ea were calculated using the nudged elastic band with a climbing image method.30 The doping electrons are introduced in the system as a consequence of
, as confirmed by calculations on BaTiO3 and BaTiO2.75□0.25 (see the SI). Specifically, since charge neutrality is maintained in the calculations, introducing one
in the supercell provides two doping electrons, while substituting one oxygen atom with a hydrogen atom yields one doping electron and one H− ion
. This results in a net total of three doping electrons, which can be found either localized near the
, forming
(high localization) or
(partial localization), or delocalized over the Ti sub-lattice, forming
(full delocalization).
Different combinations of exchange–correlation (XC) functionals and supercells are employed to investigate the impact of varying degrees of electron localization on H− mobility. The functionals employed include the Perdew–Burke–Ernzerhof (PBEsol) functional, suitable for metallic bulk and surface systems,31 and the PBE functional32 within the DFT+U framework (further referred to as PBE+U).33 They are summarized in Table 1 and further described in the following.
. The charge state of
was monitored at the initial state (I.S.) or at the transition state (T.S.)
| Label | Setting | Composition | State of | E a (eV) | |
|---|---|---|---|---|---|
| I.S. | T.S. | ||||
| a E a is given without zero-point vibrational energy correction. | |||||
| (1) High localization | 2 × 2 × 2 + PBE+U | BaTiO2.75H0.125□0.125 |
|
|
0.83 |
| (2) Partial localization | 2 × 2 × 2 + PBEsol | BaTiO2.75H0.125□0.125 |
|
|
0.60 |
| (3) Partial localization | Channel + PBEsol | BaTiO2.75H0.125□0.125 |
|
|
0.39 |
| (4) Full delocalization | 3 × 3 × 3 + PBEsol | BaTiO2.93H0.037□0.037 |
|
|
0.29 |
(1) High localization (
) of the doping electrons was modeled using the PBE+U functional with the 2 × 2 × 2 supercell. The Hubbard correction (U = 3.3 eV) is applied here as a means to localize the doping electrons near Ti4+ ions, thereby compensating for the over-delocalization that is characteristic of standard XC functionals.34 This approach has previously proven successful in modeling polarons in BaTiO2.875H0.125,15 a composition closely matching that of the 2 × 2 × 2 supercell used in this study, i.e., BaTiO2.75H0.125□0.125. In ref. 15, the U parameter was tuned to reproduce a linear dependence of the total energy on the occupation of the polaronic level – a known property of the exact XC functional35 – resulting in a calibrated value of U = 3.3 eV.
Fig. 1(a) shows the electronic band structure and the partial density of states (PDOS), revealing two defect (localized) states in the bandgap, close to the CB edge. The Fermi level is found above the CB edge, which indicates the presence of delocalized electrons in CB states, referred to as band states.
Fig. 2(a) shows real-space charge densities in the energy range of −2 to 0 eV, which, when integrated, account for a total of three doping electrons. One doping electron is delocalized over the whole Ti sub-lattice, occupying Ti orbitals of local t2g symmetry, i.e. 3dxz, 3dxy, and 3dyz orbitals [Fig. 2(a3)], which correspond to the occupied band states in the PDOS. Two doping electrons are localized near the
[Fig. 2(a1 and a2)], which correspond to the two defect states in the PDOS. The defect state of lowest energy is localized around Ti3 and occupies a Ti orbital of t2g symmetry, i.e. 3dyz [Fig. 2(a1)], while the defect state of highest energy is shared between Ti1 and Ti3 orbitals of eg symmetry, i.e. 3dz2 [Fig. 2(a2)]. Overall, two doping electrons reside near the
, which results in
. We note that H contributes in the valence band (VB) through its 1s orbital [Fig. 1(a) and Fig. S2]. Its hydridic character is confirmed by a Bader charge analysis,36 showing an excess of ∼0.6 electrons, in agreement with a previous study on BaTiO2.82H0.1□0.08.15
(2) Partial localization
of the doping electrons was modeled using the PBEsol functional with a 2 × 2 × 2 supercell. Removing the Hubbard correction restores the over-delocalization characteristic of the XC functional and, consequently, more doping electrons are expected to form band states. However, one localized defect state remains in the bandgap, making this setting useful for studying a partially localized case [Fig. 1(b)]. This unexpected defect state is attributed to the periodic boundary conditions used in our supercell calculations, which result in the close ordering of
along the Ti–□–Ti direction, leading to spurious □–□ interactions and causing electron localization. The real-space charge density shows two delocalized doping electrons occupying Ti t2g orbitals [Fig. 2(b2 and b3)], which correspond to band states in the PDOS [Fig. 1(b)], and one localized doping electron occupying Ti1 and Ti3 eg orbitals, corresponding to the defect state in the PDOS. Overall, only one doping electron resides near the
, which results in
.
(3) Partial localization in a channel. In the 2 × 2 × 2 supercell with PBEsol (2), the partial localization is due to spurious □–□ interactions. In the channel geometry, the
are more closely packed along the □–H–□ direction, with a separation of 5.6 Å compared to 8 Å in the 2 × 2 × 2 supercell, thereby exacerbating the spurious interaction effects. At the initial state, the electronic structure in the channel geometry is similar to that of the 2 × 2 × 2 supercell with PBEsol (2). We observe one defect state in the band gap touching the CB edge, as well as occupied band states. Overall, one doping electron resides near the
, resulting in
[Fig. 1(c) and Fig. 2(c)]. However, due to the channel geometry, the degree of localization may differ from that of the 2 × 2 × 2 supercell during H− migration, making this geometry an additional case of electron localization.
(4) Full delocalization
of the doping electrons was modeled using the PBEsol functional with a 3 × 3 × 3 supercell. Given that the 2 × 2 × 2 supercell and the channel geometry cause electron localization due to spurious □–□ interactions, the 3 × 3 × 3 supercell was employed in order to mitigate the effect of periodic boundary conditions and obtain only delocalized electrons. Consequently, only band states are observed, as indicated by the band structure [Fig. 1(d)] and the real-space charge density [Fig. 2(d1–d3)]. Overall, no doping electron resides near the
, which results in
.
, which is also commonly referred to as the localized diffusion of H−. In previous studies, two H− migration pathways were proposed. The first involves protonic species diffusing through interstitial sites and subsequently swapping positions with neighboring H−.21,22 The second consists of H− hopping into an adjacent
while preserving its hydridic character.4,7,8,16 Experimental studies have indicated that H− migration occurs via the second pathway,7,16 as no interstitial protonic species have been observed,37 whereas the presence of
has been confirmed.10,37 Based on this, we modeled H− migration according to the second pathway, where a H− undergoes vacancy-mediated hopping. In order to identify the saddle point for the inter-site migration, the minimum energy path (MEP) was first calculated with 5 intermediate positions of the H− in addition to the initial and final positions. This was done using the less computationally demanding setup PBEsol with a 2 × 2 × 2 supercell. Importantly, a Bader charge analysis at each configuration revealed an excess charge of approximately 0.6 electrons around the hydrogen atom, consistent with the value at the initial state, indicating that the hydrogen does not dissociate into a proton but retains its hydridic character throughout the migration process. The saddle point, further referred to as the transition state, is found exactly in the middle of the migration path, and the energy barrier is found to be symmetric around the transition state (Fig. 3). In our further calculations, only the transition state was thus calculated to save computational time.
At the transition state, two
are symmetrically arranged around Ti3, thus constraining a doping electron localized in the initial
to delocalize over both
. As a result, the symmetry of the Ti3 3dz2 orbital is violated and cannot handle the doping electron at the transition state. Instead, the Ti3 3dx2−y2 and 3dyz orbitals, initially well separated in the VB and CB, respectively, become mixed and accommodate the doping electron near Ti3. This band mixing affects the band structure and raises the energy levels of the defect states (see the SI). The position of the mixed bands, either in the band gap or in the CB, defines the degree of localization at the transition state, and therefore Ea. The main results are compiled in Table 1 and summarized in the following.
(1) For high localization of the doping electrons, the mixed states are located within the bandgap and are localized near Ti3 [Fig. 3(a)]. Because the electrons are confined near the jump path of H−, Ea increases as a result of an increase in Pauli repulsion between e− and H−, and takes the value Ea = 0.83 eV.
(2) For partial localization of the doping electrons, the mixed states are located in the CB as band states (see the SI). In other words,
at the initial state becomes
at the transition state [Fig. 3(b)], which indicates that the localized electron uses the CB to swap position with H−. In this case, we calculate Ea = 0.60 eV, which reflects the energy cost to pump the doping electron to the CB.
(3) For partial localization in a channel geometry, one mixed state is a defect state, maintaining
at the transition state, whereas the others are band states (see the SI). Interestingly, the doping electron, which was initially localized in the
, relocates near Ti2 at the transition state [Fig. 3(c)]. This relocation is facilitated by the close periodic arrangement of
along the □–H–□ direction, resulting in a lower Ea of 0.39 eV compared to (2) partial localization. Moreover, Ea is also found to be significantly lower than that of (1) high localization, at Ea = 0.83 eV, despite the presence of a localized doping electron. This reduction is due to the H− and the localized electron migrating together in the same direction, whereas for (1) high localization, they must move against each other, intensifying their interaction.
(4) For full delocalization of the doping electrons, the electronic structure remains unchanged, that is, the three doping electrons form band states and
is conserved during the H− migration, which results in Ea = 0.29 eV [Fig. 3(d)]. Note that this value is very similar to Ea = 0.28 eV, as previously calculated8 in an equally large supercell, but using DFT+U instead of PBEsol. Since we find the same value with PBEsol, we conclude that in such low concentrations of H− and
, in spite of the Hubbard correction, doping electrons always tend to delocalize or are readily displaced. Such consistency among different calculation settings strongly indicates that we are accurately modeling the actual states of doping electrons in BaTiO2.93H0.037□0.037, namely, band states. Another important observation is that the hydridic character is preserved at the transition state, as indicated by the Bader charge analysis showing an excess charge of ∼0.55 electrons, and that only the electrons forming H− are displaced during the migration, with the rest of the doping electrons residing in the CB.
By combining the results from the four different degrees of localization, we observe that when a doping electron forming
or
must migrate against H−, it entails an additional cost in energy. This cost in energy depends on the degree of localization of the doping electron. When the electron is delocalized as a band state forming
, which is favored by a lower concentration of H− and
, Ea is reduced. Conversely, when the doping electron remains localized during migration, as favored by the presence of an electron polaron, Ea increases. Interestingly, even in the presence of a localized doping electron, we find that Ea can still be reduced if the electron migrates in the same direction as H−, as enabled by the periodic arrangement of
within the channel geometry.
To further assess the role of electron localization in H− migration, we systematically depleted the doping electrons in our calculations and monitored the resulting changes in Ea. For both the PBEsol and PBE+U functionals, a consistent decrease in Ea was observed with increasing electron depletion. When all localized doping electrons were removed, Ea reached a minimum of approximately 0.4 eV, closely approaching the value of Ea = 0.28 eV obtained for case (4). These results confirm that the presence of localized electrons significantly hinders H− migration (see details in the SI).
To verify that these results are not accidental nor dependent on the choice of the XC functional, we also carried out calculations using the hybrid functional HSE06.38 The HSE06 calculations yielded one localized electron at both the initial and transition states, similar to case (1), and a comparable migration barrier of Ea = 0.89 eV (see details in the SI). The agreement in both activation energies and localization behavior confirms that this correspondence reflects the similar impact of both approaches on the system. This suggests that U parametrization offers a robust and transferable description of localization effects, providing a reliable framework for this material. This understanding provides an explanation for variations in Ea derived in previous DFT studies on H− migration in BaTiO3−x−yHx□y. On one hand, Ea was found to have a value of 0.28 eV,8 which approximates our case (4) of full electron delocalization. On the other hand, an Ea of 1 eV was derived4 close to our case (1) of high localization of the doping electrons. These varying results should be due to differences in the computational settings. While ref. 8 employed a 3 × 3 × 3 supercell, which is comparable to case (4), effectively modeling delocalized doping electrons, ref. 4 used a 2 × 2 × 2 supercell with a DFT+U functional, similar to case (1), thereby modeling localized doping electrons.
The present study also clarifies a fundamental distinction between proton and hydride migration by examining the influence of vibrational zero-point energy (ZPE) correction on Ea (see the SI for details on the calculation of the ZPE correction). For proton migration, ZPE corrections typically reduce Ea, as observed in various systems.39–41 In contrast, we find that ZPE corrections increase Ea by approximately 0.01 eV in BaTiO2.75H0.125□0.125. A comparison of the vibrational density of states between the initial/final states and the transition state reveals that one of the three H− normal modes becomes imaginary at the transition state, while the other two exhibit an upward energy shift, resulting in the observed positive ZPE correction. The stiffening of these vibrational modes is interpreted as evidence of enhanced binding of H− to the host lattice at the transition state and indicates that the H− does not migrate on a single, adiabatic potential energy surface (PES) as a proton would,42 but instead follows a non-adiabatic path involving breaking and forming bonds governed by transitions between intersecting PESs associated with the initial and final states. This finding suggests that the migration barrier is predominantly electronic in origin, governed by non-adiabatic coupling between the initial and final state PES, in contrast to proton migration, where the barrier is primarily determined by ion–ion interactions.
It is also interesting to compare our calculated Ea with the values obtained for localized H− diffusion from quasielastic neutron scattering (QENS) experiments. QENS studies on BaTiO2.3H0.04 reported an activation energy of Ea = 0.094 ± 0.002 eV,7 which aligns most closely with the value obtained for case (4) of full delocalization of the doping electrons. This consistency aligns with a previous combined DFT and INS study on BaTiO2.82H0.1□0.08, which demonstrated that the doping electrons form a band state.15 Similarly, QENS studies on the oxyhydrides SrVO2H and LaSrCoO3H0.7 – where H− ions are incorporated into a perovskite lattice, occupying sites that share the corners of oxygen octahedra – have shown that migration proceeds via the same nearest-neighbor hopping mechanism observed in BaTiO2.3H0.04. These studies reported activation energies of Ea = 0.20 ± 0.035 eV43 and Ea = 0.23 ± 0.045 eV,44 respectively. These values are in closest agreement with the activation energy obtained for case (4), corresponding to full delocalization of the doping electrons. Interestingly, these materials are Mott insulators,45–48 characterized by high electron localization on the V and Co ions, respectively. Our data thereby indicate that the doping electrons introduced in SrVO2H and LaSrCoO3H0.7 by H− and
do not form localized states within the VO but are instead localized near V and Co ions, or form band states. These observations suggest that H− migration is a local feature, independent of whether the oxyhydride material as a whole is a Mott insulator or a conductor, as evidenced by the fact that no electrons, except those forming the H− ion, are displaced during the migration in case (4) of full delocalization.
Finally, we compare our results to other classes of mixed electronic–ionic conductors, such as transition metal oxide cathode materials, where the interplay between electron polarons and ionic conductivity has been extensively studied.18–20,49–52 In these materials, the ionic charge carrier is a lithium cation (Li+), which interacts attractively with negatively charged electron polarons, leading to different outcomes compared to our findings. For example, in LiV3O8, LiV2O5, and LiCoO2, it has been observed that the presence of electron polarons lowers Ea for Li+ diffusion, and their simultaneous migration with Li+ may be the driving force for Li+ diffusion.18,19,49 Notably, Ea in these materials is generally around 0.3 eV, which is comparable to our determined Ea = 0.29 eV for case (4) – full delocalization of doping electrons. This suggests that our results cannot be generalized to all mixed electronic–ionic conductors and that the diffusing ionic species drastically affects the effect of electron polarons.
Supplementary information (SI): additional band structure, PDOS, and real-space electron density plots. See DOI: https://doi.org/10.1039/d5ma00521c.
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