Open Access Article
Enrique
H. Balaguera
*a,
F. Javier
Marinelli Pra
a,
Chittaranjan
Das
b,
Lorenzo
Torresani
b,
Juan
Bisquert
c and
Michael
Saliba
*bd
aEscuela Superior de Ciencias Experimentales y Tecnología, Universidad Rey Juan Carlos, C/ Tulipán, s/n, 28933 Móstoles, Madrid, Spain. E-mail: enrique.hernandez@urjc.es
bInstitute for Photovoltaics (ipv), University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany. E-mail: michael.saliba@ipv.uni-stuttgart.de
cInstituto de Tecnología Química (Universitat Politècnica de València-Agencia Estatal Consejo Superior de Investigaciones Científicas), Av. dels Tarongers, 46022, València, Spain
dHelmholtz Young Investigator Group FRONTRUNNER, IMD-3 Photovoltaics, Forschungszentrum Jülich, Jülich, 52425, Germany
First published on 4th September 2025
It is essential to shed light on the complex multiscale dynamics of mobile ions in perovskite solar cells for developing efficiency testing protocols, gaining a deeper understanding of the degradation mechanisms, improving long-term stability, and, ultimately, driving the commercialization of this technology. This study provides characteristic times for inhibiting the presence of mobile ions in efficiency measurements, enabling a comparison between ‘ion-freeze’ and steady-state efficiencies to quantify ion-induced degradation losses. Using current transient analysis during current–voltage measurements for a wide range of sweep rates, we achieve precise time-scale mapping of the complex ionic landscape of perovskites, spanning from ion immobilization (at time scales much shorter than the diffusion rate) to the equilibrium situation, encompassing the ubiquitous hysteresis effects for which we define a scan-rate range of occurrence. We corroborate the theory by using Impedance Spectroscopy. Our study provides valuable information about the intricate ionic dynamics in the context of classical current–voltage measurements, supporting the integration of these complementary experiments into the foundational characterization practices of the perovskite photovoltaic community.
Broader contextPerovskite solar cells have reached exceptional levels of power conversion efficiency; however, concerns about their long-term stability continue to hinder their roadmap toward commercial viability. A central issue among the degradation pathways is the behavior of mobile ions, recognized as the major contributor to the loss of efficiency and operational instability in perovskite photovoltaics. A detailed analysis of the intricate multiscale dynamics of mobile ions is therefore pivotal for advancing standardized device characterization, elucidating degradation phenomena, enhancing operational stability, and propelling the broader adoption of this emerging photovoltaic technology. Characteristic times necessary to suppress ionic contributions during performance evaluations are investigated here through a systematic current transient analysis across a spectrum of voltage sweep rates. The temporal landscape governing ion dynamics of perovskites enables a quantitative distinction between steady-state and ‘ion-freeze’ efficiencies, offering a direct measure of degradation attributable to ionic motion. In this sense, a hysteresis domain is defined within a specific scan-rate interval. Theoretical insights are substantiated through Impedance Spectroscopy, reinforcing the interpretive framework. Collectively, our findings enrich the understanding of ionic behavior in perovskite materials and advocate for the integration of such methodologies into the toolkit for device characterization within the perovskite research community. |
One of the most common underlying causes of these degradation pathways is the migration of mobile ions,5 as an intrinsic property of the perovskite absorber material. However, this process can also have beneficial effects on freshly prepared or well-passivated photovoltaic devices.6,7 Current–voltage characteristics are therefore compromised by transient ionic effects,8,9 making their understanding crucial for minimizing changes in performance over time and, ultimately, the device optimization process.10
A new methodology to quantify mobile ion-induced efficiency losses to the device performance in perovskite photovoltaics was recently presented in the literature using fast hysteresis measurements.11 This technique allows one to determine the steady-state and the ‘ion-freeze’ efficiencies, as real and virtual metrics of the device performance, respectively.12
On the one hand, the steady-state efficiency ηss, obtained from stabilized current–voltage curves, refers to the condition at which mobile ions are effectively in equilibrium and fully responding to the applied voltage.13 It is achieved when the voltage sweep rate is substantially slower than the diffusion rate (a few hundred of mV s−1). The ‘ion-freeze’ efficiency ηion-freeze, on the other hand, represents the cell performance measured under conditions where the movement of mobile ions is effectively suppressed.11,12,14 To effectively immobilize the ionic charges, the hold time along the stepwise scanning should be sufficiently short to ensure that the mobile ions are “frozen” in time (ultra-fast scan rates in the sense of a few hundred V s−1).
The difference between fast and slow scan speeds, related, respectively, to ‘ion-freeze’ and steady-state efficiencies (that is, Lion = ηion-freeze − ηss), provides a value that quantifies the performance losses caused by mobile ions in perovskite solar cells.12 Both limiting cases yield identical curves in the respective forward and reverse sweeps; however, hysteresis effects emerge in the current–voltage curves15 at intermediate scan speeds. The magnitude and rate of the ‘peak hysteresis’ or the maximum difference between the efficiency determined from the forward vs. the reverse scan is indeed a critical tool for the diagnosis of the relationship between ion migration dynamics and device performance.16–18
The origin and interpretation of hysteresis and the steady-state efficiency have been thoroughly addressed in the literature, thanks to extensive collaborative research efforts. However, there are still no consolidated theoretical principles that explain the internal physical processes behind the ‘ion-freeze’ current–voltage curves within realistic time scales that reflect the complex ionic behavior of metal halide perovskites.
In this work, we endorse the concept of ‘ion-freeze’ efficiency, inspired by the works of Stolterfoht and coworkers,5,11,12,14 as a novel approach to be used as a key parameter for emerging characterization protocols in assessing ion-induced device performance losses of high-performance perovskite solar cells.
From current–voltage measurements at different scan rates, we first corroborate the experimental results provided by literature. Using an advanced stepwise transient analysis, we demonstrate that only the fast or pure component of the recombination processes affects the evolution of the ‘ion-freeze’ current–voltage curves.
If any part of this recombination shifts to the slow ion-controlled regime of recombination, the value of ηion-freeze will change upon ageing. As the scan rate is reduced, the fast recombination mechanisms are complemented by ion-induced effects, including slow recombination processes, polarization mechanisms or even electric field screening, both in pristine conditions and after degradation.
We establish that the transition between consecutive current recordings in the voltage sweep is abruptly modified as a function of the speed rates and ageing time. From a physical model, we therefore explain the evolution of the experimental current–voltage curves, deciphering the time parameter that effectively leads to ion immobilization in a stepwise current–voltage scanning while further revealing the “game of dominance vs. loss of relevance” of physical effects in the current responses over time. A merit formula is derived to indicate the window of scan rates in which the experimentalists obtain current–voltage curves with hysteresis. Finally, impedance analysis was carried out for verification purposes.
The triple-cation perovskite precursor was prepared by wet chemistry methods. From powder-based precursors, 800 mg of PbI2 into 1157 μl of a 4
:
1 mix of dimethylformammide (DMF) and dimethylsulfoxide (DMSO), and 150 mg of PbBr2 were dissolved into 272 μl of the solvent mix. Subsequently, 220 mg of formamidinium iodide (FAI) were dissolved into 1029 μl of the PbI2 solution, and 20 mg of methylammonium bromide (MABr) were dissolved into 143 μl of the PbBr2 solution. Finally, we mix 930 μl of the FAPbI3 solution, 70 μl of MAPbBr3 and 52.6 μl of a 40 mg ml−1 solution of cesium iodide (CsI) in DMSO. The solution is kept at rest in the dark before deposition. The 2,2′,7,7′-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene (Spiro-OMeTAD) solution was prepared by dissolving 92 mg of Spiro-OMeTAD powder into 1 ml of chlorobenzene, to which 21 μl of a 520 mg ml−1 solution of bis(trifluorometano)sulfonimida lithium salt (LiTFSI) into acetonitrile, 15 μl of a 150 mg ml−1 Co(III) TFSI salt (CoTFSI) in acetonitrile and 32 μl of tributyl phosphate (TBP) were added.
The perovskite precursor (80 μl) was spin-coated on the glass/ITO/SnO2 substrate in two steps, a slow step (1000 rpm, 1000 rpm s−1, 10 s) and a fast step (5000 rpm, 2000 rpm s−1, 30 s). The solvent was removed by dropping an antisolvent (240 μl of chlorobenzene) 5 seconds before the end of the last step. The layer was finalized by annealing at 100 °C for 30 minutes. The layers are cooled down to room temperature and a solution of phenyl ethyl ammonium iodide (PEAI) 10 mg ml−1 in 2-propanol (IPA) is dynamically spin coated (4000 rpm, 1000 rpm s−1, 30 s) on the perovskite layer. A subsequent annealing at 100 °C for 1 minute ensures the formation of the 2D perovskite.
Spiro-OMeTAD was spin casted (4000 rpm, 2000 rpm s−1, 30 s) on the perovskite layer after it cooled down. The samples were left to oxidize overnight. The 100 nm golden contacts were thermally evaporated on the stack to finalize the device.
Beyond electrical measurements were carried out with a PGSTAT302N potentiostat/galvanostat, equipped with an impedance and ultra-fast sampling module, FRA32M and ADC10M, respectively, from Metrohm AutoLab. Impedance measurements were developed by configuring the AutoLab to apply sinusoidal signals of 10 mV amplitude from 1 MHz to 1 Hz at open-circuit voltage (Voc). On the other hand, chronoamperometric experiments were carried out, immediately after frequency resolved measurements, by applying a constant signal with the value of Voc and, after, voltage-excited steps of 5 mV. A sampling rate of 10 MHz and 10 kHz was used to record the initial-decay fast region and the subsequent slow relaxation of the current responses of perovskite solar cells, respectively.
All the experiments at room temperature were carried out under ambient atmosphere with the dry-air flow. The reproducibility of our conclusions was assured by conducting experiments in 10 samples with the same device configuration.
In the sequel, we use an ‘ion-freeze’ method that provides results of ion-induced losses by inhibiting the redistribution of mobile ions from their equilibrium positions at sufficiently high scan rates in comparison to equilibrium state. The evolution of the performance parameters of our perovskite solar cells with current–voltage sweep rate is shown in Fig. 1: (a) efficiency η, (b) short-circuit current density jsc, (c) Voc, and (d) fill factor (FF).
Firstly, we detect in Fig. 1a that the presence of mobile ions affects the device performance or ‘ion-freeze’ efficiency even when they are immobilized: comparing η at ultra-fast scan and slow scan rates, a slight decrease is observed, attributed to an inhomogeneous redistribution throughout the perovskite active layer that influences the fast step of recombination.20 This reduction of ηion-freeze at fast scan rates (1000 V s−1) is minimal compared to the pronounced change of ηss observed during ageing in the slow range of 500 mV s−1 and 100 mV s−1. As the samples degrade, the hysteresis effects also extend over a wider range of scan rates, evidencing a slower ionic response over time.10,21,22 An additional indicator is the gradual shift of the ‘peak hysteresis’ towards slower scan rates, underscoring the strong dependence of hysteresis behavior on the degradation state of the device.23
It is important to point out that, for the fresh samples, the main reason for the ionic loss in efficiency is the decay of approximately 1 mA cm−2 in jsc (calculable from the comparison in equilibrium and ‘ion-freeze’ states). On the other hand, the performance losses for our degraded perovskite devices are fundamentally due to an abrupt decrease of FF. Voc and jsc are affected to a lesser extent. However, this evolution exemplifies a particular case of how the performance parameters of a nip-type cell can change during degradation. A more comprehensive and extensive review of such changes across a wide range of device layer architectures has already been conducted in the literature.12 Next, we will analyze the case of a specific pin-type device.
As a representative example, Fig. 2 shows the remarkable difference of the current–voltage curves and thus of the power conversion efficiency between fast and slow scan rates after 4 weeks of ageing. If one compares both ‘ion-freeze’ current–voltage curves of Fig. 2a and c, fast losses can be easily obtained by inspection.12 Conversely, ionic losses are observed when comparing the curves at fast and slow speeds11,12 under the same operating conditions. Fig. 2b and d show that hysteresis remains normal, not inverted, suggesting that capacitive and polarization effects24,25 govern, for this case and commonly for high-performance and stable cells, the device operation.
The basic solar cell device model establishes that the net extracted current in steady state or equilibrium is
| Jss (V) = Jrec (V) − Jph(V, Φ) | (1) |
For perovskite solar cells, Jrec must be separated into two different pathways depending on the recombination velocity. Based on the experimental impedance observations of the voltage-dependence electrical elements reported in literature,26,27 we therefore assume the overall recombination current as9,28
| Jrec (V) = Jrec,fast (V) + Jrec,slow (V) | (2) |
![]() | (3) |
![]() | (4) |
Both components represent, respectively, the fast bulk and slow surface recombination modes with Jf0 and Jd0 as pre-factors, as well as nf and nd as ideality factors. Here q is the elementary charge, kB the Boltzmann's constant, and T the absolute temperature.
On the other hand, we also separate the photocurrent, created by charge extraction at selective contacts and commonly affected by ion-induced field screening in perovskite solar cells, into two components. The steady-state photocurrent Jph(V, Φ) is,
![]() | (5) |
In perovskite solar cells in which slow ion-assisted relaxation effects are present, an additional transient current jtrans is expected to be observed in experimental measurements. Thus, this fundamental analysis allows us to write a general formula for the total current31 flowing through the perovskite solar cells j divided in terms accounting for electronic steady-state contributions and ion-assisted transient effects:
| j = Jss + jtrans | (6) |
Note that we use uppercase letters for steady-state or instantaneous currents (Jss and its terms) and lowercase letters for time-dependent currents (jtrans and its components) throughout the manuscript.
Ionic motion becomes evident at intermediate sweep rates, manifesting itself from hysteresis mechanisms in the current–voltage curves and underlying a multitude of phenomena, such as polarization,24,32 delayed recombination,32–34 or field screening.12,29,35,36 Consequently, the relaxation current can be expressed as:
![]() | (7) |
![]() | (8) |
Therefore, the limiting behavior of the hysteretic current is:
![]() | (9) |
On the one hand, the hysteresis term is zero at sufficiently low scan rates (s → 0): internal ionic dynamics are equilibrated (vs → V, jd → Jrec,slow(V), and vb → V).13
Under ‘ion-freeze’ conditions (at a scan rate sufficiently high s → ∞), on the other hand, ionic polarization current is negligible (vs → 0), surface recombination pathway is deactivated (jd → 0),42 and the charge collection efficiency by diffusion is not reduced (vb → 0), generating, as discussed below, the difference between ηss and ηion-freeze. Note that eqn (9) for high scan rates can be obtained, therefore, including a zero value for the slow ion-controlled variables in eqn (S1)–(S7). Specifically, it is important to clarify that surface recombination cannot dynamically respond during fast-hysteresis measurements (e.g., under ‘ion-freeze’ conditions) when the applied voltage changes rapidly. The respective ion-driven current is consequently “frozen in time”, unchanged during the voltage scan, and therefore does not contribute to the observed current evolution. As a result, device efficiency remains invariant upon ageing. So, we demonstrate that the ‘ion-freeze’ efficiency is independent of surface recombination, as evidenced by both theory and experimental measurements via transient analysis and Impedance Spectroscopy. This insight resolves previously reported ambiguities arising from drift-diffusion approaches12 and contributes to a deeper understanding of the ‘ion-freeze’ state in perovskite solar cells.
From eqn (1)–(7), and (9), the ‘ion-freeze’ current may be therefore expressed as
![]() | (10) |
The resulting behavior is characterized by complex multiscale dynamics from the initial spike just after the voltage step, due to series resistance effects Rs, to the final steady-state regime, when the ions are in equilibrium. During this transition, the current response converges to an intermediate state, giving rise to the ‘ion-freeze’ phenomena in the current–voltage curves. Notably, the transient responses only show decays between 0 V and Voc in our perovskite devices, driven primarily by polarization effects.24,43 However, it is also plausible for the dynamics to exhibit a decay followed by a rise—or the reverse—accompanied by subsequent negative spikes,44 if specific time constants are involved and delayed recombination or field screening become dominant factors.41
Fig. 3 provides a general outlook of the current waveforms and the respective labels during the classical stepwise voltage scanning used to assess device efficiencies.45–47 Note that, however, the values of mainly the conductances and to a lesser extent the time constants can vary along the swept voltage due to the intrinsic nonlinear behavior of the solar cell and thus, further analysis is indeed necessary48 as we will show below.
To analyze the dynamical properties of the perovskite solar cells during classical voltage scanning from an adequate theoretical perspective, one should consider small step-type perturbations that depart from stationary points as excitations.45 For the measurement of cyclic voltammetry, the critical parameter is the scan rate
![]() | (11) |
From the linearization of eqn (1) and (6)–(8), network analysis and synthesis show that the relaxation processes involved in the current shifts Δj during a voltage sweep are described according to the following relationships:13,42
| Δjss = ΔV(grec,fast + grec,slow + gelect field) = ΔVgdc | (12) |
| Δj(t) = Δjss + Δjtrans(t) | (13) |
![]() | (14) |
![]() | (15) |
The graphical representation of the experimental current shift Δj(t) of Fig. 3 has been labeled to reveal details in correspondence to eqn (12)–(15). Here, the transient current makes a transition from the initial conductivity peak (with a value of 1/Rs and after describing the dielectric capacitor charging governed by τv = RsCg) to an ‘ion-freeze’ conductivity state, gion-freeze + gdc, that finally causes the current to decay by the ion-controlled effects towards a stationary conductance gdc.
An expanded view of time-dependent photocurrents in response to stepwise voltage sweep in forward direction around Voc of Fig. 4a is shown in Fig. 4b–d, as a representative example, for the perovskite devices after 4 weeks of ageing.
![]() | ||
| Fig. 4 Illustrative photocurrent profile as a function of time at a (a) forward stepwise voltage scan between Voc and Voc + 20 mV depending on the duration of the 5 mV voltage steps: (b) 50 ms (scan rate of 0.1 V s−1), (c) 0.5 ms (scan rate of 10 V s−1), and (d) 5 μs (scan rate of 1000 V s−1) corresponding, respectively, to the equilibrium situation, ‘peak hysteresis’, and ‘ion-freeze’ state of the current–voltage curves shown in Fig. 2c and d for our perovskite devices. | ||
In the current–time profiles of Fig. 4b, all photocurrents reach steady-state conditions at the end of each step and thus, no hysteresis effects should emerge in the subsequent current–voltage curves (refer to Fig. 2c for a scan rate of 0.1 V s−1). Here, we strategically select a minimum time delay Δtss to reach steady-state conditions:
![]() | (16) |
Subsequently the optimal scan rate sss to accelerate the elimination of the hysteresis is
![]() | (17) |
Note that, to simplify the problem, we assumed that the slow physical processes exhibit approximately the same kinetic time constant τkin independently on the voltage, which is a realistic assumption according to experimental observations.13,28,40
With lower experimental delay times, slow and non-steady-state operation of the nip-type perovskite solar cells gradually influence the electrical responses shown in Fig. 4c. As a result, one obtains increasing residual currents as a natural consequence of the past activity. Physically speaking, the anomalous ion migration cannot respond as fast to each voltage stimuli introduced during cyclic voltammetry and therefore the current is interrupted before the value of the hysteretic current is negligible, Δjhyst(t) ≠ 0 A. In this way, the shape of the current–voltage curve is altered due to the hysteresis phenomenon (refer to Fig. 2d), driven by the presence of mobile ions.
Finally, Fig. 4d shows that the pseudo-instantaneous currents uniquely emerge at sufficiently low values of Δt. Current responses are indeed pseudo-stabilized in an intermediate state in which the hysteretic response of eqn (15) is constant, Δjhyst = ΔVgion-freeze, and thus the ions are immobilized without generating notorious discrepancies between the current–voltage relationship in forward and reverse scans (refer to Fig. 2c for a scan rate of 1000 mV s−1). Only the charging of the bulk capacitor and the fast step of recombination processes take place at each voltage step during the voltage cycling. The key here is that the contribution of the ‘ion-freeze’ conductivity gion-freeze is not reduced by the respective exponential term of eqn (15).
Mathematically speaking, this condition requires that e−t/τkin ∼ 1, which implies that only the first term of the MacLaurin series expansion of the exponential function is operative, 1 ≫ (t/τkin). Therefore, the time Δtion-freeze required to neutralize the movement of ions and approach an ‘ion-freeze’ state, in practice, is that for which
| Δtion-freeze ≪ τkin | (18) |
| Δjion-freeze = ΔV(gdc + gion-freeze) | (19) |
![]() | (20) |
Hence, the solar cell characterizers can obtain a current–voltage curve devoid of hysteresis effects at the voltage scan speeds given by eqn (17) and (20), corresponding to the equilibrium and ‘ion-freeze’ states, respectively. For intermediate values (Δtion-freeze < Δt < Δtss), hysteresis phenomena become apparent in the current–voltage curves. Thus, this work, for the first time in literature, defines a “hysteresis window”
![]() | (21) |
Note that, experimentally, τkin does not maintain a strict constant value, particularly for aged devices throughout the swept voltage range, as can be seen in the plot of the relaxation times of Fig. 5a obtained from time- and frequency-resolved techniques. This fact requires that experimentalists select an appropriate value based on the previously outlined rules: the maximum (minimum) value of τkin for eqn (16) and (17) (eqn (18) and (20)).
First, we present the theoretical admittance response of our model for a small sinusoidal perturbation of angular frequency ω:
![]() | (22) |
We observe that the perovskite devices respond with a double capacitive arc in the complex plane impedance and admittance plots26,53 of Fig. 5b, which is strictly equivalent to the doubling decay of the current responses shown in Fig. 3 and 4. Apart from the initial high frequency, there are two additional frequential values fion-freeze and fdc (experimentally, around 200 kHz and 20 Hz) in which the admittance exhibits a single conductance value with zero susceptance; i.e., Y′(jω) is strictly equal to gion-freeze + gdc or gdc and Y′′(jω) = 0. Note that ω = 2πf. There is, in fact, a close relationship between these frequencies and the values of time Δtion-freeze and Δtss leading to free-hysteresis current–voltage curves, as some of the authors indicated in a previous work.42
The hysteresis window is also highlighted in Fig. 5a, which is located in the low-frequency range of fion-freeze > f > fdc. To select such specific values, it is important to note that the concept of admittance, not impedance, must be analyzed, as only the former is controlled in voltage,41 like the current–voltage curves. For a more detailed impedance-based analysis, additional measurements at different operating bias voltage points would be necessary, which have already been presented in detail by the authors in other works.49,54
However, certain differences in the characteristic time scales are observed: the ‘ion-freeze’ state, the ‘peak hysteresis’, and the equilibrium regime occur at faster scan rates compared to our nip-type cells, which is consistent with previous reports.17,25,49 Additionally, the ‘ion-freeze’ regime for this device is narrower (see, specifically, Fig. S1c), an observation of particular interest. This peculiar behavior correlates with the smaller separation between τv and τkin in the pin-type architecture relative to the nip-type device. In short, we present experimental evidence that confirms the validity of the conclusions presented here in the SI.
Supplementary information: theory of ion-controlled processes of perovskite solar cells; conductances of the complete device model; summary of analytical variables; application in pin-type cells. See DOI: https://doi.org/10.1039/d5el00137d.
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