Tunable magnetic anisotropy and phase transitions in 2D Janus transition-metal chalcogenide halides†
Abstract
Two-dimensional (2D) magnetic semiconductors have received increasing interest for spintronic applications due to their tunable magnetic properties. Using first-principles calculations, we design a series of 2D novel ferromagnetic semiconductors, including VSBr and Janus M2S2BrX (M = Cr/V, X = F, Cl, I), which exhibit various exotic properties. We realize an indirect-to-direct bandgap transition in Cr2S2BrF, a giant perpendicular magnetic anisotropy in V2S2BrI, and a significant TC enhancement in both V2S2BrF and V2S2BrI. Notably, we reveal that biaxial tensile strain can induce a phase transition from ferromagnetic to antiferromagnetic states in the VSBr, V2S2BrCl and V2S2BrI, which is driven by the sign reversal of the third nearest-neighbor spin interaction J3. Meanwhile, under tensile strain, the TC of VSBr and V2S2BrCl reach 264 K and 297 K, respectively. These findings highlight our designed materials for great potential applications in advanced electronic and spintronic devices, showcasing their unique capabilities and promising performance.

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