From the journal:

Chemical Communications

Interfacial chemical bond engineering on a Te semiconductor to weaken carrier–phonon coupling to boost thermoelectric conversion performance†

Decheng An, ORCID logo *a   Min Liu,a   Zhiyong Si,a   Wang Yue,a   Wutao Yanga  and  Xian-Ming Zhang*a  

* Corresponding authors

a College of Chemistry and Chemical Engineering, State Key Laboratory of Clean and Efficient Coal Utilization, Taiyuan University of Technology, Taiyuan 030024, China
E-mail: andecheng@tyut.edu.cn, zhangxianming@tyut.edu.cn

Abstract

The thermoelectric performance of Te-based semiconductors can be boosted by utilizing interfacial chemical-bonding heterogeneity without doping the matrix lattice. The dual p–p type heterointerfaces obtained through introducing metavalently bonded Bi2Te3 and covalently bonded B into Te enable obvious carrier–phonon decoupling.

Graphical abstract: Interfacial chemical bond engineering on a Te semiconductor to weaken carrier–phonon coupling to boost thermoelectric conversion performance

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Article information

DOI
https://doi.org/10.1039/D5CC02836A
Article type
Communication
Submitted
19 May 2025
Accepted
16 Jun 2025
First published
16 Jun 2025

Chem. Commun., 2025, Advance Article

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Interfacial chemical bond engineering on a Te semiconductor to weaken carrier–phonon coupling to boost thermoelectric conversion performance

D. An, M. Liu, Z. Si, W. Yue, W. Yang and X. Zhang, Chem. Commun., 2025, Advance Article , DOI: 10.1039/D5CC02836A

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