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Correction: Effective strategies for current boosting in a mesa-shaped In–Ga–Zn–O vertical-channel thin-film transistor with a short-channel length of 40 nm
Chae-Eun
Oh
a,
Young-Ha
Kwon
b,
Nak-Jin
Seong
b,
Kyu-Jeong
Choi
b and
Sung-Min
Yoon
*a
aDepartment of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 17104, Korea. E-mail: sungmin@khu.ac.kr
bNCD Co., Ltd, Daejeon 34015, Korea
First published on 19th November 2024
Abstract
Correction for ‘Effective strategies for current boosting in a mesa-shaped In–Ga–Zn–O vertical-channel thin-film transistor with a short-channel length of 40 nm’ by Chae-Eun Oh et al., J. Mater. Chem. C, 2024, 12, 14455–14468, https://doi.org/10.1039/D4TC02779E.
The authors regret errors in the right y-axis label values in the published article for the graphical abstract, Fig. 2(a)–(c) and 8(a), where the displayed range of 0–800 for linear drain current should be 0–80. These errors do not impact any of the conclusions of the article.
The corrected images are shown here (the captions remain unchanged).
Graphical abstract:
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| Fig. 2 Variations in transfer characteristics as an increase in VDS from 0.1 to 1.0 V for the (a) Dev-A, (b) Dev-B, and (c) Dev-C, respectively. Typical output characteristics for the fabricated IGZO VCTs when the TCH was varied to (d) 5 (Dev-A), (e) 10 (Dev-B), and (f) 15 nm (Dev-C), respectively. | ||
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| Fig. 8 Variations in transfer characteristics (a) with an increase in VDS from 0.1 to 1.0 V and (b) with a lapse of stress time for 104 s under the PBTS conditions at 60 °C for Dev-AL. Evolution of the transfer characteristics with an increase in measurement temperature for (c) Dev-A and (d) Dev-AL. | ||
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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