Issue 23, 2024

Demonstration of high-performance STO-based WORM devices controlled by oxygen-vacancies and metal filament growth

Abstract

Herein, we propose high-performance Ti/STO/n+-Si and Ag/STO/n+-Si write-once-read-many-times devices, where the resistance transition mechanisms are controlled by oxygen vacancies in the STO layer and metal atoms from the electrochemically active Ag electrode, respectively. The as-deposited STO films have a low oxygen-vacancy content of 12.2%. When the Ti electrode is deposited, the formation of a thin TiOx interfacial layer at the Ti/STO interface is achieved, which leads to an increase of oxygen vacancy content in the STO layer to 28.6%. The relatively higher oxygen vacancy density means that the Ti/STO/n+-Si device can provide a voltage-polarity-independent memory function. In contrast, the resistance transition of the Ag/STO/n+-Si device can be limited in the positive voltage region because Ag cations can only be driven into the STO layer using a positive bias. Both devices show high ILRS/IHRS ratios, superior data retention capability, and fast transition speeds.

Graphical abstract: Demonstration of high-performance STO-based WORM devices controlled by oxygen-vacancies and metal filament growth

Article information

Article type
Paper
Submitted
01 Apr 2024
Accepted
15 May 2024
First published
16 May 2024

J. Mater. Chem. C, 2024,12, 8418-8425

Demonstration of high-performance STO-based WORM devices controlled by oxygen-vacancies and metal filament growth

C. Hsu, X. Wen, K. Xiao, W. Jhang and M. Joodaki, J. Mater. Chem. C, 2024, 12, 8418 DOI: 10.1039/D4TC01319K

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