Issue 18, 2024

Halogen ion doping mediated exciton state modulation in MoS2 quantum dots for fluorescence tuning and optical anti-counterfeiting

Abstract

Developing an ideal luminescent material with exceptional performance in various aspects, such as affordability, low toxicity, high photostability and security, is vital for advanced optical anti-counterfeiting. Here, halogen-doping-dependent luminescence MoS2 quantum dots were synthesized via a simple hydrothermal method for optical anti-counterfeiting ink. The results show that F, Cl and Br doping results in notable fluorescence blueshifts of MoS2 quantum dots and significant enhancements in the photoluminescence quantum yield (PLQY) of up to 5.7, 5.0, and 3.2 times, respectively. However, I incorporation causes a fluorescence redshift and a 25% decrease of PLQY. This mechanism is elucidated using density functional theory (DFT) and experiments. Specifically, F, Cl and Br doping localizes surface electrons and blocks sulfur vacancies in MoS2 quantum dots, enhancing the release of neutral excitons from trions and defect-bound excitons. Conversely, I doping increases the surface charge and sulfur vacancies, favouring the conversion of neutral excitons into trions and defect-bound excitons. The halogen-doped MoS2 quantum dots are engineered as security ink, demonstrating high concealment, excellent photostability and easy fabrication. The study offers a novel way of tailoring fluorescence of MoS2 quantum dots, potentially extending to other transition metal dichalcogenide quantum dots and their optical anti-counterfeiting implementation.

Graphical abstract: Halogen ion doping mediated exciton state modulation in MoS2 quantum dots for fluorescence tuning and optical anti-counterfeiting

Supplementary files

Article information

Article type
Paper
Submitted
19 Feb 2024
Accepted
04 Apr 2024
First published
10 Apr 2024

J. Mater. Chem. C, 2024,12, 6645-6652

Halogen ion doping mediated exciton state modulation in MoS2 quantum dots for fluorescence tuning and optical anti-counterfeiting

F. Wu, Y. Cheng, K. Wu, R. Wu, R. Yu, P. Guan, Y. Cheng, W. Li, J. Yang and X. Wei, J. Mater. Chem. C, 2024, 12, 6645 DOI: 10.1039/D4TC00660G

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