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Multiferroicity in 2D MSX2 (M = Nb and Zr; X = Cl, Br, and I)

Yutong Li ab, Haoyun Bai b, Zhichao Yu b, Chi Tat Kwok *ab and Hui Pan *bc
aDepartment of Electromechanical Engineering, Faculty of Science and Technology, University of Macau, Macao SAR, China. E-mail: fstctk@um.edu.mo
bInstitute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, China. E-mail: huipan@um.edu.mo
cDepartment of Physics and Chemistry, Faculty of Science and Technology, University of Macau, Macao SAR, China

Received 2nd February 2024 , Accepted 28th March 2024

First published on 29th March 2024


Abstract

Recently, two-dimensional (2D) multiferroic materials have aroused intensive interest owing to the combination of ferroelectric and magnetic properties. In this work, we design a family of 2D MSX2 (M = Zr and Nb; X = Cl, Br, and I) and investigated their structural, mechanical, magnetic, electronic, ferroelectric, and piezoelectric properties based on first-principles calculations. We find that ferroelectric (FE) ZrSX2, paraelectric (PE) ZrSX2 and FE NbSX2 are stable. ZrSX2 materials are nonmagnetic, while NbSX2 materials have antiferromagnetic (AFM) ground states. NbSX2 materials demonstrate multiferroic behaviors, which can be explained by the pseudo Jahn–Teller distortion (PJTE) mechanism. Our work reveals the intrinsic multiferroicity of MSX2, which may provide a guidance on the design of 2D functional materials.


1. Introduction

2D multiferroics have been attracting much attention due to their promising properties such as high spontaneous FE polarization,1–4 photovoltaic effects,5–8 and high-temperature magnetism.9 FE materials, such as BiFeO310 and BaTiO3,11–13 have demonstrated outstanding potential for memory storage and integrated microelectrons. 2D GeS showed a tunable Curie temperature and spontaneous polarization of 1 C m−2, and mutliferroic behaviors under small strain provided high freedom for modulating ferroelectric devices.3 2D CrI3-based magnetic tunneling junctions exhibit layered-dependent magnetism, in which an outstanding magnetoresistance was reported.14,15 Commonly, there is an off-center displacement in FE phases other than the PE phase, indicating the break of symmetry for FE polarization.10,16–18 Taking 2D VOCl2 as an example, the off-center displacement of V ions contributes to FE characteristics, and the energy barrier of the FE flip is 0.18 eV, which stabilizes the ferroelectricity.19 2D TiOBr2 exhibits significant piezoelectricity with d11 = 37.758 pm V−1, resulting from low in-plane elastic constants and atomic sensitivity to an applied strain.4 Young's moduli (Cij) reflect the ability to stretch and deform. The structures also have large piezoelectric strain coefficients (dij) because of their large piezoelectric stress coefficients (eij) and low Young's moduli. The CrOF2 monolayer exhibits a half-metallic nature with intrinsic ferromagnetism (FM) and a high phase transition temperature. The Pmna-MnOCl2 monolayer is an FM-stabilized semiconductor with an indirect band gap of 0.152 eV, while the Pmmn-MnOCl2 monolayer is an FM Dirac semimetal with a Curie temperature of 910 K.20 Uniaxial strain drives the magnetic phase transition in CrOF2, resulting in a high phase transition temperature.21 2D NbOX2 materials possess suitable conduction band minimums (CBMs) and valence band maximums (VBMs) for photocatalytic water splitting, which can be further tuned by stacking.22 Furthermore, the proper built-in electric field, high carrier mobility, and suitable band edges in 2D NbOXY make it a potential candidate for overall water splitting.23 2D MoOCl2 has hyperbolic optical properties with two wide hyperbolic windows from 0.41 to 2.90 eV and from 3.63 to 5.54 eV.24

Compared with bulk counterparts, 2D materials can be modified by various methods, such as surface engineering,25,26 defect engineering,27 strain engineering,28 heterostructure engineering,29,30 and composition engineering,31 to achieve ideal properties for targeted applications. Although numerous investigations have been carried out on 2D metal oxide dihalides,22,32–34 studies on the ferroelectricity of 2D metal sulfide dihalides are limited. In this work, we present a systematic study of 2D MSX2 based on first-principles calculations. We reveal the intrinsic ferroelectricity in MSX2 and piezoelectric effects vary with tension.

2. Methods

All calculations were performed by the Vienna ab initio simulation package (VASP) with the projector augmented wave (PAW) potential and Perdraw–Burke–Ernzerhof (PBE) energy functional.35–39 A vacuum slab of 15 Å along the c-axis was used to avoid interactions between neighboring layers, which has been tested (Fig. S1, ESI). The cut-off energy for the plane-wave basis set was 550 eV, and the convergence threshold and residual forces were 1 × 10−7 eV and 1 × 10−3 eV Å−1, respectively.36,40,41 A 2 × 2 × 1 supercell was used to study magnetic properties. The Γ-centered k-meshes for sampling the Brillouin zone (BZ) were 12 × 12 × 1, 6 × 6 × 1, and 3 × 3 × 1 for structural relaxation, electronic structures, and phonon calculations, respectively.42 The Γ-only grid was used for the AIMD simulation. The Heyd–Scuseria–Ernzerhof hybrid functional (HSE06) was used to calculate band structures accurately.43 The climbing image nudged elastic band (CI-NEB)44 method was implemented to determine the energy barrier of the ferroelastic phase transition. To describe the Coulomb interaction among partially occupied d-electrons of transition metals, the GGA+U45 method was adopted in our calculations. The various values of 1, 2, and 3 eV elucidate the effects of Hubbard U on structural and electronic properties.

The density-functional perturbation theory46 (DFPT) was used to calculate the phonon dispersion with the Phonopy47 code; 3 × 3 × 1 supercells were used for the phonon calculations as well as AIMD simulations. The Γ-centered k-meshes were 18 × 18 × 1 for the calculations of piezoelectric parameters via the DFPT. To study the thermodynamic stability, the ab initio molecular dynamic (AIMD) simulation48 was performed. The simulated temperature, time step, and time period in AIMD were 300 K, 1 fs, and 8 ps, respectively. VASPKIT49 was used as the post-processing tool for data analysis.

To determine Néel temperatures (TN), Monte Carlo (MC) simulations50 were performed based on the Wolff algorithm of the classical Heisenberg model using the MCSOLVER code.51,52 In the MC simulations, a 100 × 100 square supercell containing 10[thin space (1/6-em)]000 local magnetic moments was adopted; 40[thin space (1/6-em)]000 MC steps were performed at each temperature, and the calculations lasted for 6.4 × 109 loops at each temperature.

3. Results and discussion

3.1 Structural properties

MSX2 has four atoms in a unit cell, including one metal atom (M = Zr and Nb), one sulfur atom and two halogen atoms (X = Cl, Br, and I). Similar to 2D TiOX2, VOX2, and VOXY,4,53 in-plane off-center displacement of metal atoms leads to multiferroic behavior. The FE phases with the space group of Pmm2 (No. 25) and PE phases with the space group of Pmmm (No. 47) were investigated. The FE structures have two kinds of M–S bond lengths (dM–S2 and dM–S1) and two kinds of S–M–X bond angles (Fig. 1). The differences between θ1 and θ2 decrease as X changes from Cl to I. In contrast, the lengths of M–S bonds are the same in the PE phases, and the bond angles of S–M–X remain 90° (Table S1, ESI). Moreover, two kinds of X–M–X angles are found in the structures. The polar displacement (P.D.) leads to in-plane ferroelectricity, which can be defined as follows:53
 
P.D. = |dM–S2dM–S1|/2,(1)
where dM–S2 indicates the long bond length between metal and sulfur atoms, and dM–S1 is the short one.

image file: d4tc00463a-f1.tif
Fig. 1 (a) Top and (b) and (c) side views of a 2 × 2 × 1 supercell of FE MSX2 and (d) top and (e) side views of PE MSX2. M–S2 indicates the long bond length between metal and sulfur atoms, M–S1 is the short counterpart, and the black arrow indicates the direction of FE polarization.

The P.D. decreases dramatically with the increase in U in ZrSX2. In contrast, the P.D. varies slightly with U in NbSX2 (Fig. S2 and Table S2, ESI). There are imaginary optical phonon modes at the Γ point for PE ZrSX2 and little imaginary frequency for FE counterparts, suggesting spontaneous symmetry breaking and off-center displacements of metal atoms4,54 (Fig. S3 and S4, ESI). The negligible imaginary dispersions of the FE phases may be induced by the calculation accuracy and lattice instabilities related to long wave undulations, which have been reported in other 2D materials.55,56 Correspondingly, the lattice parameter b in the FE phase is larger than that in the PE phase because of the off-center displacements of metal atoms in MSX2 (Table S1, ESI). Furthermore, PE ZrSX2 materials with U = 3 eV are dynamically stable with negligible imaginary frequencies (Fig. S4, ESI). NbSX2 materials are dynamically unstable without U, while exhibiting similar FE phenomena with U = 3 eV (Fig. 2a and Fig. S5, S6, ESI). NbSCl2 shows a weak tolerance to tension (Fig. S6, ESI). All of the ZrSX2 materials exhibit dynamically stable FE phases without U and PE phases with U = 3 eV. MSCl2 and MSBr2 are unstable with U = 1 eV and 2 eV, but have stable FE phases with U = 3 eV (Fig. S3–S8, ESI). Previous reports indicate that NbSX2 and VOX2 exhibited varied polarizations with U.4,57 Therefore, ZrSX2 without and with U (3 eV) and NbSX2 with U = 3 eV were investigated.


image file: d4tc00463a-f2.tif
Fig. 2 (a) Phonon spectrum, (b) AIMD simulation, (c) Young's moduli, and (d) Poisson's ratio of FE NbSBr2 with U = 3 eV.

3.2 Structural stability

To ensure thermodynamic and mechanical stabilities, we carried out AIMD simulations and calculated mechanical parameters. The AIMD simulations show that the total energies of the structures have little fluctuations over time, and the mean squared displacement (MSD) was defined as
 
image file: d4tc00463a-t1.tif(2)
where x(t) and x(0) is the position of atom i at a time of t and 0, respectively, and N stands for the total number of atoms.

The MSDs are less than 0.6 Å2, indicating thermodynamic stability (Fig. 2b and Fig. S9 and S10, ESI).58 Stable FE phases are supposed to retain positive elastic constants restricted by the Born–Huang criteria:59

 
C11C22C122 > 0(3)
 
C66 > 0(4)
We see that FE ZrSX2, ZrSX2 with U = 3 eV, and FE NbSX2 with U = 3 eV are mechanically stable as obtained elastic constants satisfy the Born–Huang criteria. Their Young's moduli (Ex and Ey), Poisson's ratios (νx and νy) and shear moduli (G) are also obtained (Table 1). Thus, we confirm that MSX2 materials are dynamically, thermodynamically, and mechanically stable. In addition, the distorted shapes of Young's moduli and Poisson's ratios reflect their anisotropic nature (Fig. 2c and d and Fig. S11–S15, ESI). Previous studies have indicated that the mechanical and piezoelectric properties may be enhanced under tension along polarization.60,61 Thus, we also obtained the corresponding parameters at a tension of 5% along b-axes. With the tension along the b-axis, C22 drops significantly, leading to a lower Ey and a higher νx. Conversely, C22 soars with a larger U in ZrSX2, resulting in higher Ey and smaller Poisson's ratios.

Table 1 Mechanical parameters of the structures
MSX2 Tension (%) U (eV) Stiffness tensor (GPa) Young's modulus E (GPa) Poisson's ratio Shear modulus G (GPa)
C 11 C 12 C 22 C 66 C 11 C 22C122 (±) X y X y G
ZrSCl2 0 0 18.569 3.606 23.747 4.577 + 18.021 23.047 0.152 0.194 7.482
ZrSCl2 5 0 17.766 2.839 4.957 3.582 + 16.140 4.503 0.573 0.160 7.464
ZrSCl2 0 3 18.877 0.959 57.459 4.926 + 18.861 57.410 0.017 0.051 8.959
ZrSBr2 0 0 16.083 3.192 24.629 4.485 + 15.669 23.995 0.130 0.198 6.446
ZrSBr2 5 0 15.621 2.633 4.936 3.577 + 14.216 4.492 0.533 0.169 6.494
ZrSBr2 0 3 16.102 0.926 57.017 4.762 + 16.087 56.964 0.016 0.058 7.588
ZrSI2 0 0 13.550 2.554 27.386 4.361 + 13.312 26.905 0.093 0.188 5.498
ZrSI2 5 0 13.424 2.196 5.582 3.524 + 12.560 5.223 0.393 0.164 5.614
ZrSI2 0 3 13.479 0.895 56.740 4.491 + 13.465 56.681 0.016 0.066 6.292
NbSCl2 0 3 18.943 4.931 15.986 6.013 + 17.422 14.702 0.308 0.260 7.006
NbSCl2 5 3 20.242 1.481 3.439 4.898 + 19.604 3.331 0.431 0.073 9.381
NbSBr2 0 3 17.985 3.562 26.608 6.122 + 17.508 25.903 0.134 0.198 7.212
NbSBr2 5 3 17.967 3.455 2.784 5.000 + 13.679 2.120 1.241 0.192 7.256
NbSI2 0 3 16.385 3.088 31.860 6.024 + 16.086 31.278 0.097 0.188 6.649
NbSI2 5 3 16.659 3.050 3.551 5.027 + 14.039 2.993 0.859 0.183 6.805


The formation energies were also obtained to demonstrate their possibility for experimental realization:62

 
Ef = (EMSX2EMES − 2EX)/4,(5)
where EMSX2 is the ground state energy of MSX2 per chemical formula, and EM, ES, and EX are the chemical potentials of metal, sulfur and halogen atoms calculated from their elemental forms, respectively. The calculated formation energies are negative (Table S3, ESI), indicating that they are possible to be achieved experimentally. Moreover, other phases, including MS and X2, as well as MX2 and S, were considered to calculate the formation energy of MSX2. Their formation energies are obtained as follows:
 
Ef1 = (EMSX2EMS − 2EX)(6)
 
Ef2 = (EMSX2ESEMX2),(7)
where EMS and EMX2 are the energies of bulk MS and MX2, respectively. The results indicate that MSI2 may decompose into MS and I2 and others may not (Table S4, ESI). We find that energy barriers between FE and AFE structures are 19, 17, 8, 60, 52, and 38 meV per unit cell for ZrSCl2, ZrSBr2, ZrSI2, NbSCl2, NbSBr2, and NbSI2, respectively (Fig. S16, ESI), which are much lower than those of the VOCl2 monolayer19 and LiNbO3 perovskite.63 FE polarizations are switchable, and the energy barriers for FE-AFE switches in NbSX2 are higher than the thermal energy at room temperature (∼26 meV), indicating stable FE states (Fig. S16, ESI).

3.3 Magnetic properties

FE ZrSX2 materials do not show magnetism as the energies do not change with spin (Table S5, ESI). In contrast, the FE NbSX2 materials demonstrate magnetic behaviors. To determine the magnetic ground states of NbSX2, one FM state and three AFM states were studied in a 2 × 2 × 1 supercell (Fig. S17, ESI). The exchange energy per unit cell is the energy difference between stable AFM and FM states:62,64
 
Eex = (EAFMEFM)/N,(8)
where EAFM is the energy of the most stable AFM state, EFM is the energy of the FM state, and N is the number of unit cells inside a supercell (N = 4). The exchange energies are −226, −36, and −17 meV per unit cell for NbSCl2, NbSBr2, and NbSI2, respectively, illustrating the AFM3 ground state (Table 2 and Table S6, ESI). The exchange energy of NbSCl2 is much higher than that of VTe2.64 Compared with FM-stabilized materials, AFM-stabilized ones do not have redundant magnetic fields and are significantly insensitive to external magnetic fields due to their zero total magnetization. Moreover, 2D AFM structures have fast spin dynamics and high packing density, making them potential candidates for fostering innovation in spin-based devices.65–68
Table 2 Exchange energies (Eex), magnetic moments, exchange coupling parameters, and Néel temperatures
NbSX2 U (eV) E ex (meV per unitcell) Nb (μB) S (μB) X (μB) J a (meV) J b (meV) J ab (meV) T N (K)
NbSCl2 3 −226 ±0.863 ±0.072 0 −28.593 0.328 0.218 25
NbSBr2 3 −36 ±0.870 ±0.069 0 −4.618 0.099 0.116 4.5
NbSI2 3 −17 ±0.868 ±0.063 0 −2.356 0.203 0.194 2


Magnetic anisotropy describes the preferred orientations of magnetic moment vectors.69 The magnetic anisotropy energies (MAEs) in xOz, yOz, and xOy planes for NbSCl2, NbSBr2 and NbSI2, respectively, are investigated by including the spin–orbital coupling (SOC) effect, which is defined as70–72

 
MAE = EE,(9)
where E and E are energies per chemical formula with the in-plane and out-of-plane spins with respect to the easy axes, respectively.

The angular dependent results show that easy magnetization axes are [100], [001], and [010], and the MAEs are 0.073, 0.050 and 0.036 meV per unit for NbSCl2, NbSBr2 and NbSI2, respectively (Fig. S18, ESI), which are much higher than those of cubic Fe73 and Ni.74 As X changes from Cl to I, the easy magnetization axes are altered, and the MAEs decrease. Specifically, the total energy varies significantly with the magnetization direction in the xOy and yOz planes. The significant the MAEs of NbSX2 make them potential candidates for nanoscale devices such as magnetic recording media.75

The magnetic moments of niobium atoms are close to 1μB per Nb. The nearest–neighbor (NN) and next–nearest–neighbor (NNN) exchange interactions are considered to determine the exchange parameters of NbSX2.19,54 The NN exchange coupling parameters along the a- and b-directions are Ja and Jb, and the NNN exchange coupling parameter is Jab (Fig. S17, ESI).76,77 The Hamiltonian is written as

 
image file: d4tc00463a-t2.tif(10)
where H0 is the nonmagnetic Hamiltonian, Mi is the net magnetic moment at site i, 〈ija is nearest Nb atoms along the a-direction, and 〈〈kl〉〉 stands for NNN Nb atoms. The NN and NNN exchange coupling parameters can be solved by the energies of one FM state and three AFM states. The total energies of the four magnetic states are calculated as19
 
EFM = E0 − 4M2 (Ja + Jb + 2Jab)(11)
 
EAFM1 = E0 − 4M2 (−Ja + Jb − 2Jab)(12)
 
EAFM2 = E0 − 4M2 (JaJb − 2Jab)(13)
 
EAFM3 = E0 − 4M2 (−JaJb − 2Jab)(14)
After obtaining the MAEs and exchange parameters, the TN can be determined by the MCSOLVER code. The TN of NbSCl2 is higher than that of VOF278 and VOI279 (Table 3 and Fig. S19, ESI).

Table 3 Piezoelectric parameters of the structures
MSX2 Tension (%) U (eV) e 21 (10−10 C m−1) e 22 (10−10 C m−1) d 21 (pm V−1) d 22 (pm V−1)
ZrSCl2 0 0 1.754 −19.836 0.264 −0.875
ZrSCl2 5 0 0.530 −11.489 0.441 −2.570
ZrSBr2 0 0 1.476 −19.387 0.255 −0.820
ZrSBr2 5 0 0.401 −10.965 0.440 −2.456
ZrSI2 0 0 1.236 −21.474 0.243 −0.807
ZrSI2 5 0 0.234 −10.551 0.349 −2.027
NbSCl2 0 3 4.379 −37.886 0.922 −2.654
NbSBr2 0 3 0.537 −13.883 0.137 −0.540
NbSBr2 5 3 0.159 −9.832 0.904 −4.653
NbSI2 0 3 0.356 −13.069 0.101 −0.420
NbSI2 5 3 0.000 −8.951 0.548 −2.991


3.4 Electronic properties

The band structures and densities of states (DOSs) were calculated based on the magnetic ground states to uncover the mechanism of FE switching and magnetism. FE ZrSX2 are direct bandgap semiconductors with flat bands around the CBMs (Fig. S20 and Table S7, ESI). FE NbSX2 are indirect bandgap semiconductors (Fig. 3, Fig. S21 and Table S7, ESI). PE ZrSX2, PE NbSCl2, and PE NbSBr2 have small direct bandgaps with the CBM and VBM at Γ points (Fig. 3, Fig. S21 and Table S7, ESI). Moreover, the FE ZrSX2 materials are direct bandgap semiconductors according to the HSE06 method, whose CBMs and VBMs meet the requirements of photocatalysts (Fig. S22 and Table S7, ESI).
image file: d4tc00463a-f3.tif
Fig. 3 Band structures of (a) FE and (b) PE NbSBr2, PDOSs of (c) FE and (d) PE NbSBr2, PDOSs of Nb atoms in (e) FE and (f) PE NbSBr2, and PDOSs of S atoms in (g) FE and (h) PE NbSBr2 with U = 3 eV.

The partial density of states (PDOSs) illustrate the hybridization between metal and non-metal atoms (Fig. S23–S27, ESI). Around the CBMs, the spin-polarizations dominantly originate from the d-orbitals of metal atoms, while the p-electrons of non-metal atoms contribute mostly to the VBMs of ZrSX2 (Fig. S23 and S24, ESI). Differently, the d-electrons of niobium atoms dominate the states near the VBMs of NbSCl2 and NbSBr2. Furthermore, the spin-polarizations near the CBMs in ZrSX2 mainly originate from the dz2 orbital. In contrast, significant spin-splitting around the VBMs induced by the dz2 orbitals and CBMs by the dxy and dyz orbitals leads to magnetic moments of 0.863, 0.870, and 0.868μB per Nb for NbSCl2, NbSBr2, and NbSI2, respectively. The charge distribution reflects the bonding among atoms. The ELF contour around the center of M–X bonds is near 0, revealing ionic interaction (Fig. S25 and S26, ESI). According to Goodenough–Kanamori–Anderson rules,80–83 the super-exchange usually leads to AFM characteristics in FE NbSX2 when the average angles of cation–anion–cation bond angles are around 90°. The average angles of θ1 and θ2 as well as α1 and α2 are 90° (Fig. 1 and Table S1, S8, ESI), confirming the AFM nature. Therefore, the super-exchange is responsible for the AFM state observed in NbSX2 because of their semiconducting nature.84–87

Similar to metal oxide dihalides, the off-center displacements of metal atoms give rise to multiferroic characters. The bandgaps of the FE phases are much larger than their PE counterparts (Table S7, ESI), and a similar trend has been reported in 2D VOCl2.19 We find that the energy levels of the dxz orbitals are much lower in the FE phases than those in the PE phases, leading to d electrons with low energies (Fig. 3e, f and Fig. S27, S29, and S30, ESI). The energies of FE phases are lower than those of the PE phases, which can be elucidated by the PJTE mechanism.88 According to the PJTE mechanism, similar to Ti4+, Zr4+ exhibits a d0 configuration. In contrast, Nb4+ demonstrates a d1 configuration like Ti3+ and V4+.89 Zr4+ leads to a zero magnetic moment, whereas Nb4+ is endowed with magnetism, leading to multiferroic characteristics in NbSX2. Unpaired electrons are found in Nb4+, whereas all the electrons are paired in Zr4+, causing the spin-splitting in Nb4+. There is spin-splitting in the t1u orbitals of S atoms in FE NbSX2, leading to magnetic moments of over 0.06μB per sulfur. However, the magnetic moments are 0 in ZrSX2 and PE NbSX2.

3.5 Piezoelectric properties

To further investigate the FE switching in ZrSX2, the piezoelectric parameters were obtained. The piezoelectric strain coefficients are defined as53,90
 
d21 = (e21C22e22C12)/(C11C22C122)(15)
 
d22 = (e22C11e21C12)/(C11C22C122),(16)
where eij is piezoelectric stress coefficients and Cij is stiffness tensors. Due to smaller C22 and larger off-center displacement of metal atoms, the strain coefficients become significant under tension along the direction of FE switching (Table 3). The piezoelectric stress coefficients are much higher than those of some 2D Janus transition metal dichalcogenides,91 as well as the h-BN monolayer.92 At a tension of 5%, the Poisson's ratios along the [010] axes are much lower than those along the [100] axes. Consequently, negative Poisson's ratios are found in NbSX2 (Fig. S14, ESI). Moreover, the variations of X–M–X angles are more significant than those of S–M–X angles at a tension (Table S8, ESI), leading to higher Poisson's ratios along the [100] axes rather than the [010] axes. Similar trends are found in penta-BCP because of the major fluctuation of bond angles.90 By considering FE switching stability, piezoelectric stress and strain coefficients, we see that NbSX2 can be applied for sensors and energy conversion.93,94

4. Conclusions

In summary, we propose a 2D family MSX2 (M = Zr and Nb; X = Cl, Br, and I) and investigate their stability, magnetic, electronic, and piezoelectric properties on the basis of the first-principles calculations for multiferroicity. We find that FE ZrSX2, PE ZrSX2, and FE NbSX2 are stable, and the FE switching of NbSX2 is stable at room temperature. The off-center displacements of M ions induce differences between the electronic structures of the FE and PE phases. It is expected that designed structures can be applied to nanoscale spintronic devices. This work may provide guidance on the design of 2D materials with promising multiferroicity.

Conflicts of interest

There is no conflict to declare.

Acknowledgements

This work was supported by the Science and Technology Development Fund (FDCT) from Macau SAR (0050/2023/RIB2, 0023/2023/AFJ, 006/2022/ALC, and 0111/2022/A2), Multi-Year Research Grants (MYRG-GRG2023-00010-IAPME and MYRG2022-00026-IAPME) from the Research & Development Office at the University of Macau, and the Shenzhen-Hong Kong-Macao Science and Technology Research Programme (Type C) (SGDX20210823103803017) from Shenzhen.

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