Open Access Article
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Correction: Recent progress in eutectic gallium indium (EGaIn): surface modification and applications
Wensong
Ge
a,
Rui
Wang
a,
Xiaoyang
Zhu
*a,
Houchao
Zhang
a,
Luanfa
Sun
a,
Fei
Wang
a,
Hongke
Li
a,
Zhenghao
Li
a,
Xinyi
Du
a,
Huangyu
Chen
a,
Fan
Zhang
a,
Huifa
Shi
a,
Huiqiang
Hu
b,
Yongming
Xi
b,
Jiankang
He
c,
Liang
Hu
*d and
Hongbo
Lan
*a
aKey Laboratory of Additive Manufacturing and Applications in Universities of Shandong, Shandong Engineering Research Center for Additive Manufacturing, Qingdao University of Technology, Qingdao 266520, China. E-mail: zhuxiaoyang@qut.edu.cn; hblan99@126.com
bDepartment of Spinal Surgery, The Affiliated Hospital of Qingdao University, Qingdao 266003, China
cXi’an Jiaotong University, Xi’an 710049, China
dKey Laboratory of Biomechanics and Mechanobiology, Ministry of Education, Beijing Advanced Innovation Center for Biomedical Engineering, School of Biological Science and Medical Engineering, Beihang University, Beijing 100191, China. E-mail: cnhuliang@buaa.edu.cn
First published on 22nd January 2024
Abstract
Correction for ‘Recent progress in eutectic gallium indium (EGaIn): surface modification and applications’ by Wensong Ge et al., J. Mater. Chem. A, 2024, 12, 657–689, https://doi.org/10.1039/D3TA04798A.
The authors regret an error in the spelling of affiliation b, that affiliation d was incorrect, and that author Liang Hu’s email address was listed alongside the incorrect affiliation in the original article. The correct affiliation list is as presented here.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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