Seong-Hoon
Jang
*ab,
Randy
Jalem
b and
Yoshitaka
Tateyama
bc
aInstitute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan. E-mail: jang.seonghoon.b4@tohoku.ac.jp
bResearch Center for Energy and Environmental Materials (GREEN), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
cLaboratory for Chemistry and Life Science, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8501, Japan
First published on 5th August 2024
The search for inorganic solid electrolytes suitable for the realization of solid-state batteries with structural stability and high ion conductivity at room temperature remains a significant challenge. In this study, we employed a multi-stage density functional theory molecular dynamics (DFT-MD) sampling workflow, focusing on Na-ion sulfides with trivalent (M) and pentavalent (M′) metal ions and an expanded selection of parent structures (Ω). This led to the identification of two promising sampling spaces (M,M′,Ω) = (Ga,P,Na4SiS4) and (Si,Ta,Na4SiS4). The predictions were validated through multi-temperature DFT-MD calculations, wherein σNa,300K ≳ 10−3 S cm−1 are attained within a thermodynamic phase stability range of 9 < Ehull < 25 meV per atom (Ehull is convex hull decomposition energy): Na4Ga0.5P0.5S4, Na3.75Ga0.375P0.625S4, Na4.25Ga0.625P0.375S4, Na3.75Si0.75Ta0.25S4, Na3.625Si0.625Ta0.375S4, and Na3.5Si0.5Ta0.5S4. These compounds are highly suggested for experimental synthesis and investigation. Moreover, our brute-force and highly generalized sampling technique is expected to be applicable in uncovering other solid electrolyte classes, thus potentially contributing to the advancement of solid-state battery technology.
While numerous high-throughput sampling techniques have been rigorously developed for the material search of SEs,11–14 we built our own multi-stage density functional theory molecular dynamics (DFT-MD) sampling workflow in a bid to efficiently find stable Na-ion sulfides with high σNa,300K as demonstrated in our previous study.15 Encompassing various ions [M and M′ denote two distinct metal ions characterized by varying valence states, denoted as ν(M) and ν(M′), respectively, and n, m, and m′ are the contents of Na-, M-, and M′-ions, respectively] while maintaining parent structures Ω (given by NanΩMmS4; nΩ is the content of Na ions in the structure), our analysis yielded that a significant proportion of several promising candidates with σNa,300K > 10−3 S cm−1 features ν(M) = 3 and ν(M′) = 5, M = Si with ν(M) = 4, and M = Ta with ν(M′) = 5.
In this study, leveraging the methodology and knowledge from our previous study,15 we aim to expand the scope of candidate parent structures Ω considering the promising combinations of (M,M′), freeing Ω from a direct association with M (Ω = NanΩMΩS4; MΩ is the host metal ion for Ω, not necessarily being M). This new approach will broaden the exploration scope for material space, thereby enhancing the efficiency of identifying uncharted but synthesizable materials possessing superior target properties such as σNa,300K. Our objective was to investigate whether (M,M′) may exhibit increased stability in different polymorphs. Initially, we thoroughly explored the material space (M,M′,Ω) while maintaining a fixed value of m = m′ = 0.5 for : 112 cases of (M,M′,Ω) in total. This selection, driven by the maximization of mixing entropy, resulted in the attainment of the highest value of σNa,300K as reported in the preceding study.15 Within this framework, we identified two stable sampling spaces (Si,Ta,Na4SiS4) and (Ga,P,Na4SiS4), both showing high promise for σNa,300K. Subsequently, we extended our exploration by varying the values of m and m′ within (Si,Ta,Na4SiS4) and (Ga,P,Na4SiS4). This expanded approach resulted in the discovery of crystal structures with not only promising σNa,300K but also significantly decreased convex hull decomposition energy per atom Ehull, thereby greatly improving our ability to predict stable crystal frameworks Ω capable of accommodating M and M′.
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Fig. 1 Sampling protocol to identify stable Na-ion sulfide solid electrolytes with high conductivity at room temperature. The protocol comprises two parts: sampling for ![]() |
Next, we employed 11 compositions with varying m (and correspondingly, m′) for (M,M′,Ω) = (Ga,P,Na4SiS4) and (Si,Ta,Na4SiS4) by adding 9 compositions (Na4SiS4, Na4Ga0.125Si0.75P0.125S4, Na4Ga0.25Si0.5P0.25S4, Na4Ga0.375Si0.125P0.375S4, Na3.75Ga0.375P0.625S4, Na4.25Ga0.625P0.375S4, Na3.875Si0.875Ta0.125S4, Na3.75Si0.75Ta0.25S4, and Na3.625Si0.625Ta0.375S4) to the existing 2 compositions (Na4Ga0.5P0.5S4 and Na3.5Si0.5Ta0.5S4). The same procedure for the structure search was executed again. We generated a substantial number of random site arrangements for these supercells by adding a dataset size of ndata = 10, 842, 306, 118 for the 9 compositions. From these arrangements, we selected the lowest EEwald case for each composition by adding ndata = 9.27–29 In the subsequent step of DFT geometry optimizations, we fully relaxed the site positions and lattice parameters for the selected arrangements. Then, we estimated σNa,300K and Na-ion activation energies Ea by performing DFT-MD simulations with τ = 1 fs and τ = 100 ps at different temperatures T = 500, 600, 700, 800, and 900 K.
Composition | Ω | a (Å) | b (Å) | c (Å) | V (Å3) | E hull (meV per atom) | |
---|---|---|---|---|---|---|---|
Na4Al0.5P0.5S4 (Na96Al12P12S96) | Na4SiS4 | 41.87 | 8.917 | 13.86 | 5174 | 14.6 | 4.10 × 10−3 |
Na4Al0.5V0.5S4 (Na96Al12V12S96) | Na4SiS4 | 41.90 | 8.780 | 14.08 | 5181 | 16.8 | 3.25 × 10−3 |
Na4Al0.5Nb0.5S4 (Na96Al12Nb12S96) | Na4SiS4 | 42.20 | 8.951 | 14.15 | 5346 | 17.2 | — |
Na4Al0.5Sb0.5S4 (Na96Al12Sb12S96) | Na4SnS4 | 15.74 | 15.74 | 13.86 | 3434 | 13.9 | 1.52 × 10−3 |
Na4Al0.5Ta0.5S4 (Na96Al12Ta12S96) | Na4SiS4 | 42.23 | 8.954 | 14.14 | 5346 | 19.4 | — |
Na 4 Ga 0.5 P 0.5 S 4 (Na 96 Ga 12 P 12 S 96 ) | Na 4 SiS 4 | 41.76 | 8.977 | 13.87 | 5201 | 15.8 | 1.03 × 10 −2 |
Na4Ga0.5V0.5S4 (Na96Ga12V12S96) | Na4SiS4 | 42.02 | 8.807 | 14.05 | 5200 | 17.3 | 3.04 × 10−3 |
Na4Ga0.5Nb0.5S4 (Na96Ga12Nb12S96) | Na4SiS4 | 42.24 | 8.989 | 14.13 | 5366 | 17.7 | 1.10 × 10−3 |
Na4Ga0.5Sb0.5S4 (Na96Ga12Sb12S96) | Na4SnS4 | 15.76 | 15.76 | 13.90 | 3449 | 15.5 | 3.73 × 10−4 |
Na4Ga0.5Ta0.5S4 (Na96Ga12Ta12S96) | Na4SiS4 | 42.30 | 8.997 | 14.11 | 5369 | 19.7 | 2.35 × 10−4 |
Na4In0.5P0.5S4(Na96In12P12S96) | Na4SnS4 | 15.93 | 15.93 | 13.65 | 3464 | 30.8 | 1.66 × 10−3 |
Na4In0.5V0.5S4 (Na96In12V12S96) | Na4SnS4 | 15.83 | 15.83 | 13.82 | 3464 | 35.9 | 5.16 × 10−5 |
Na4In0.5Nb0.5S4 (Na96In12Nb12S96) | Na4SnS4 | 15.84 | 15.84 | 13.97 | 3503 | 23.5 | 8.41 × 10−3 |
Na4In0.5Sb0.5S4 (Na96In12Sb12S96) | Na4SnS4 | 15.92 | 15.92 | 13.96 | 3536 | 17.4 | — |
Na4In0.5Ta0.5S4 (Na96In12Ta12S96) | Na4SnS4 | 15.85 | 15.85 | 13.97 | 3507 | 26.0 | 2.44 × 10−5 |
Na 3.5 Si 0.5 Ta 0.5 S 4 (Na 84 Si 12 Ta 12 S 96 ) | Na 4 SiS 4 | 41.65 | 8.937 | 14.08 | 5241 | 24.1 | 3.34 × 10 −2 |
As illustrated in our previous study, is limited by the short timescale for site-to-site jumps at low T, however, it serves as a computationally efficient metric for identifying promising candidates with high σNa,300K.15 Besides, in our previous study, given the fixed v(M) and v(M′), we identified two key descriptors for achieving high σNa,300K: the average widest Na–3S solid angle max(ΩNaSx) for NaSx polyhedra and the average Na–S bond length dNa–S.15 These descriptors with high values would facilitate the release of self-diffusing Na-ions from the cages of NaSx. Notably, Na4Ga0.5P0.5S4 and Na3.5Si0.5Ta0.5S4 exhibit high values for not only
but also max(ΩNaSx) and dNa–S (see Fig. 2), indicating their potential for excellent σNa,300K. Based on these observations, our focus shifted towards investigating (M,M′,Ω) = (Ga,P,Na4SiS4) and (Si,Ta,Na4SiS4) with varying m.
The outcomes of the geometric optimizations conducted for the 11 compositions across (M,M′,Ω) = (Ga,P,Na4SiS4) and (Si,Ta,Na4SiS4) are presented in Table 2 as well. It is noteworthy that a decrease in the Si content (that is, the deviation from Ω) results in an increase in the value of Ehull. For all the investigated compositions, Ehull remains below 25 meV per atom, signifying their structural (meta)stability and the feasibility of their synthesis. We represent several examples of the visualized crystal structures in Fig. 3a and 4a. In addition, their bandgap energies Eg, a metric for electron-insulating properties, exhibited high values: around 3 eV for most cases.
Composition | a (Å) | b (Å) | c (Å) | V (Å3) | E hull (meV per atom) | E g (eV) |
---|---|---|---|---|---|---|
Na4SiS4 (Na96Si24S96) | 41.61 | 8.791 | 13.88 | 5077 | 0 | 4.03 |
Na4Ga0.125Si0.75P0.125S4 (Na96Ga3Si18P3S96) | 41.71 | 8.820 | 13.88 | 5106 | 4.26 | 2.98 |
Na4Ga0.25Si0.5P0.25S4 (Na96Ga6Si12P6S96) | 41.86 | 8.843 | 13.87 | 5136 | 8.27 | 3.12 |
Na4Ga0.375Si0.25P0.375S4 (Na96Ga9Si6P9S96) | 41.60 | 8.912 | 13.88 | 5145 | 8.88 | 3.12 |
Na4Ga0.5P0.5S4 (Na96Ga12P12S96) | 41.76 | 8.977 | 13.87 | 5201 | 15.8 | 2.44 |
Na3.75Ga0.375P0.625S4 (Na90Ga9P15S96) | 40.81 | 8.953 | 13.93 | 5091 | 19.7 | 3.00 |
Na4.25Ga0.625P0.375S4 (Na102Ga15P9S96) | 42.21 | 8.996 | 13.98 | 5308 | 20.7 | 2.92 |
Na3.875Si0.875Ta0.125S4 (Na93Si21Ta3S96) | 41.66 | 8.782 | 13.95 | 5102 | 5.20 | 3.03 |
Na3.75Si0.75Ta0.25S4 (Na90Si18Ta6S96) | 41.75 | 8.782 | 14.00 | 5134 | 9.26 | 3.02 |
Na3.625Si0.625Ta0.375S4 (Na87Si15Ta9S96) | 41.77 | 8.767 | 14.10 | 5134 | 14.7 | 2.70 |
Na3.5Si0.5Ta0.5S4 (Na84Al12Ta12S96) | 41.65 | 8.937 | 14.08 | 5241 | 24.1 | 2.85 |
In Table S2,† we provide the values for σNa,T and DNa,T obtained through multi-temperature DFT-MD calculations for (M,M′,Ω) = (Ga,P,Na4SiS4). Furthermore, in Fig. S1a–g,† we present mean squared displacement (MSD) curves, most of which exhibit linear responses against the sampled time intervals τMSD. As indicated in their insets, the trajectories at T = 500 K showed limited interconnectivity until the Si-ion content becomes zero. The interconnected trajectories, indicative of site-to-site jumps, are noticeable in Na4Ga0.5P0.5S4, Na3.75Ga0.375P0.625S4, and Na4.25Ga0.625P0.375S4. This observed trend is also reflected in the Arrhenius plot, where we estimated the interpolated Ea and the extrapolated σNa,300K (see Fig. 3b). For these three samples, Ea was suppressed to less than 350 meV, while σNa,300K either exceeded or remained around 10−3 S cm−1. We note that a possible explanation of an order of magnitude discrepancy between and σNa,300K ≈ 10−3 S cm−1 for Na4Ga0.5P0.5S4 is the insufficient timescale for site-to-site jumps considered in
. It is noteworthy that a decrease in the Na-ion content, as seen in Na3.75Ga0.375P0.625S4, resulted in a suppression of Ea and an enhancement of σNa,300K, likely due to the creation of the additional free space for Na-ion self-diffusions. As illustrated in Fig. 3c, achieving σNa,300K ≳ 10−3 S cm−1 for (M,M′,Ω) = (Ga,P,Na4SiS4) would be realized at the expense of decreased phase stability (15 < Ehull < 21 meV per atom, which are relative to zero decomposition energy of the pristine structure Ω): Na4Ga0.5P0.5S4, Na3.75Ga0.375P0.625S4, and Na4.25Ga0.625P0.375S4.
In Table S2,† we also provide the values for σNa,T and DNa,T obtained through multi-temperature DFT-MD calculations for (M,M′,Ω) = (Si,Ta,Na4SiS4). Additionally, in Fig. S2a–d,† we present linear MSD curves against τMSD. As indicated in their insets, even at T = 500 K, trajectories exhibited interconnectivity, even for the relatively low doping levels of the Ta-ion. Notably, the interconnected features were predominantly observed around Ta-ions, wherein Na vacancies exist. This trend is reflected in the Arrhenius plot (see Fig. 4b). For instance, in the case of Na3.875Si0.875Ta0.125S4, Ea = 413 meV and σNa,300K = 4.93 × 10−5 S cm−1 were estimated. Furthermore, with an increase in the Ta-ion doping level (or a decrease in the Na-ion content), Ea was further suppressed, accompanied by an enhancement of σNa,300K. In the case of Na3.5Si0.5Ta0.5S4, Ea = 215 meV and σNa,300K = 1.35 × 10−2 S cm−1 were estimated. As illustrated in Fig. 4c, achieving σNa,300K ≳ 10−3 S cm−1 for (M,M′,Ω) = (Si,Ta,Na4SiS4) would be realized at the expense of decreased phase stability (9 < Ehull < 25 meV per atom): Na3.75Si0.75Ta0.25S4, Na3.625Si0.625Ta0.375S4, and Na3.5Si0.5Ta0.5S4. The high values of σNa,300K ≳ 10−3 S cm−1 for Na4Ga0.5P0.5S4 and Na3.5Si0.5Ta0.5S4 partly justify the use of m = m′ = 0.5 in the initial step of the sampling protocol. We also discuss the electrochemical stability windows for the 11 compositions in the Discussion S2.†
![]() | (1) |
The model exhibits a substantial R2-value (R2 = 0.711) and an F-value of 87.0 with a significantly low p-value (p < 0.001), while all t-tests for the constant term and the three coefficients revealed p < 0.001. The variance inflation factors (VIF) were sufficiently small, indicating an absence of multicollinearity issues: VIF = 1.02, 1.06, and, 1.08 for the first, second, and third coefficients, respectively. Here, r(M) denotes the Shannon ionic radius for a metal ion M.31,32 The data plot for this model is presented in Fig. 5.
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Fig. 5 Data plot for the multivariate regression model against Ehull calculated by using DFT (presented in Table S1†) with a substantial R2-value (R2 = 0.711). For the model, eqn (1) was adopted with ndata = 110. |
The first term n − nΩ suggests that Ehull would increase if the Na-ion sites are added (rather than omitted) during structural modifications from the pristine Ω. The second term suggests that Ehull would increase when the average valence for M and M′ deviates from that of MΩ. The third term
suggests that Ehull would increase with a larger average ionic radius for M and M′ compared to that of MΩ. In light of these findings, two sampling spaces, namely (M,M′,Ω) = (Ga,P,Na4SiS4) and (Si,Ta,Na4SiS4), with high σNa,300K, are deemed appealing for experimental realizations. For Na4Ga0.5P0.5S4 with Ehull = 15.8 meV per atom, it is given that n − nΩ = 0,
, and
. Similarly, for Na3.5Si0.5Ta0.5S4Ehull = 24.1 meV per atom, it is given that n − nΩ = −0.5,
, and
. The numerical analyses elucidate that a combination of Ga, P, and Ta would constitute an appropriate blend for the parent structure Na4SiS4.
These predictions were subsequently validated through multi-temperature DFT-MD calculations. Notably, σNa,300K ≳ 10−3 S cm−1 were attainable within a range of 9 < Ehull < 25 meV per atom: Na4Ga0.5P0.5S4, Na3.75Ga0.375P0.625S4, Na4.25Ga0.625P0.375S4, Na3.75Si0.75Ta0.25S4, Na3.625Si0.625Ta0.375S4, and Na3.5Si0.5Ta0.5S4. Based on our observations, we expect that the co-doping of Ga, P, and Ta into the parent structure Na4SiS4, leading to the formation of compositions Na4+g−p−tGagSi1−g−p−tPpTatS4, would present an intriguing avenue for further investigation in future studies. The limitation of this study should be noted also; although σNa,300K were optimized at m = m′ = 0.5, as observed in Na4Ga0.5P0.5S4 and Na3.5Si0.5Ta0.5S4, other choices of m (m′) in the initial step of the sampling protocol are worth exploring. Future studies should assess these alternatives.
We believe that these two identified sampling spaces, characterized by both thermodynamic stability and fast Na-ion conductivity, warrant further experimental investigations. Additionally, this brute-force sampling technique has the potential to explore other classes of solid electrolytes, which could be pivotal in the ongoing advancement of solid-state battery technology.
Footnote |
† Electronic supplementary information (ESI) available: Details of sampling protocol, comprehensive dataset for lattice constants, unit cell volumes, and convex hull decomposition energies for (M,M′,Ω) at m = m′ = 0.5, and the results of the multi-temperature diagnosis. See DOI: https://doi.org/10.1039/d4ta02522a |
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