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Correction: Mechanical force-driven multi-state memory in WO3−δ thin films
Mingdi
Yang
a,
Zonglin
Lv
a,
Shan
Li
a,
Jiaqi
Li
a,
Jinpeng
Cao
a,
Junjie
Chen
a,
Yilin
Wang
b,
Kun
Lin
a,
Qiang
Li
*a,
Jun
Miao
a and
Xianran
Xing
*a
aBeijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China. E-mail: xing@ustb.edu.cn; qiangli@ustb.edu.cn
bCollege of Materials Science and Engineering, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China
First published on 23rd July 2024
Abstract
Correction for ‘Mechanical force-driven multi-state memory in WO3−δ thin films’ by Mingdi Yang et al., Inorg. Chem. Front., 2024, 11, 3919–3926, https://doi.org/10.1039/D4QI00789A.
The authors regret that the data in Fig. 3(i) were incorrect in the original article. The corrected figure is included below. Fig. S4 also contained incorrect data and this figure has been corrected in an updated supplementary information file.
 | ||
| Fig. 3 The resistive switching of the WO3−δ thin film with respect to mechanical force. (a) Schematic diagram of applying mechanical force by CAFM. (b) and (d) CAFM plots after different mechanical forces applied. (c) and (e) Corresponding current statistics charts. (f) I–V curves after different mechanical forces applied. (g) ON/OFF ratios. (h) and (i) I–V curve fittings for Schottky emission. | ||
In the corrected figure, Fig. 3(i) shows the Schottky fitting results of HRS induced by mechanical force, and the slope values are 8.56 (previously 9.49) in the negative voltage area and 13.16 (previously 10.65) in the positive voltage area. The corrected Fig. S4 shows the Schottky fitting results of HRS induced by voltage, and the slope values are 14.83 (previously 8.53) in the negative voltage area and 15.08 (previously 9.97) in the positive voltage area.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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