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Correction: High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing
Sujaya Kumar
Vishwanath
*a,
Benny
Febriansyah
b,
Si En
Ng
a,
Tisita
Das
c,
Jyotibdha
Acharya
d,
Rohit Abraham
John
a,
Divyam
Sharma
a,
Putu Andhita
Dananjaya
e,
Metikoti
Jagadeeswararao
b,
Naveen
Tiwari
a,
Mohit Ramesh Chandra
Kulkarni
a,
Wen Siang
Lew
e,
Sudip
Chakraborty
*c,
Arindam
Basu
f and
Nripan
Mathews
*ab
aSchool of Materials Science & Engineering, Nanyang Technological University, 639798, Singapore. E-mail: sujayav@iisc.ac.in; nripan@ntu.edu.sg
bEnergy Research Institute@NTU (ERI@N), Nanyang Technological University, 637553, Singapore
cMaterials Theory for Energy Scavenging (MATES) Lab, Harish-Chandra Research Institute(HRI) Allahabad, HBNI, Chhatnag Road, Jhunsi, Prayagraj (Allahabad), 211019, India. E-mail: sudiphys@gmail.com
dSchool of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
eSchool of Physical and Mathematical Sciences, Nanyang Technological University, Singapore
fDepartment of Electrical Engineering, City University of Hong Kong, Hong Kong
First published on 29th August 2024
Abstract
Correction for ‘High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing’ by Sujaya Kumar Vishwanath et al., Mater. Horiz., 2024, 11, 2643–2656, https://doi.org/10.1039/D3MH02055J.
The authors regret an error in the Acknowledgements section of the published article, in which an incorrect project code number was reported for the Competitive Research Programme (CRP): “NRF-CRP14-2014-03” should be replaced with “NRF-CRP25-2020-0002”.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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