Zdeněk
Weiss
*a,
Jaroslav
Čapek
a,
Zdeněk
Kačenka
ab,
Ondřej
Ekrt
a,
Jaromír
Kopeček
a,
Monika
Losertová
c and
Dalibor
Vojtěch
b
aFZU – Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 00, Praha 8, Czech Republic. E-mail: weissz@fzu.cz
bUniversity of Chemistry and Technology, Faculty of Chemical Technology, Department of Metals and Corrosion Engineering, Technická 5, Dejvice, 166 28, Praha 6, Czech Republic
cDepartment of Materials Engineering and Recycling, Faculty of Materials Science and Technology, VSB – Technical University of Ostrava, 17. listopadu 2172/15, Poruba, 708 00, Ostrava, Czech Republic
First published on 11th March 2024
Depth profile analysis of a hydrogenated Ti–6Al–4V alloy by glow discharge optical emission spectroscopy (GDOES) is described. Besides the earlier reported ‘hydrogen effects’, causing changes in emission intensities of other elements if hydrogen is present, the analysis of hydrogen itself was found to be affected by the redistribution of hydrogen in the region adjacent to the analyzed spot, due to sample heating and the thereby increased hydrogen diffusivity. A simple model of heat transfer within the sample during the GDOES analysis is proposed and the surface temperature of the analyzed spot is estimated to be ≈365 °C, in the given experimental setup.
GDOES is a relatively well accessible method, capable of analyzing hydrogen. In the conventional analysis by GDOES of metals and alloys, a robust, accurate and self-consistent calibration/quantification scheme exists.8 The central relation linking glow discharge emission intensities of analytical lines, IE,M, and the concentrations cE,M of the respective elements, analyzed in a matrix (sample) M, is as follows:
IE,M = REcE,MqM | (1) |
GDOES analyses were made using the GDA750HR spectrometer (Spectruma GmbH., Germany), with a DC discharge in argon and a 2.5 mm-internal anode diameter Grimm-type spectral source with a 7 mm-diameter sealing o-ring (see the schematic diagram in ref. 11). The optical system of the instrument consists of an f = 0.75 m Paschen–Runge vacuum polychromator with 34 fixed channels with photomultipliers, creating a spectral resolution of ≈25 pm. A constant discharge voltage/discharge current of 850 V/15 mA in argon was used in the measurements. Sputter rate-corrected calibration was established on this instrument, based on certified reference materials of titanium with impurities and various titanium alloys, the closest of which to the Ti–6Al–4V composition were the materials 101X Ti3 A (MBH Analytical Ltd, UK), IARM 178C (ARMI International, USA) and RTi 13-10 (SUS GmbH, Germany). A two-point calibration was set up for hydrogen, based on pure titanium and a TiH2 layer on Ti.12 Calibration for oxygen was made using several low-oxygen titanium samples, and, as a high point, an iron oxide layer on steel (calamine).14 Emission yields were calculated by linear regression, as the slopes of the intensity vs. (c.q) plots, while subtracting the spectral background of the respective line.8
To be able to correct for hydrogen effects in some elements, GDOES spectra of pure elements were collected in pure argon and the (Ar + 0.25% H2) mixture, at the same discharge current and voltage, using the GDS500A spectrometer (LECO Corp., USA). This is an instrument with CCD detectors and a spectral resolution of ≈65 pm. Emission lines used for the elements analyzed are listed in Table 1, together with intensity ratios of these lines in pure Ar and the Ar–H2 mixture, denoted as ξAr–ArH, and the corresponding hydrogen-correction factors (see eqn (2) and the description of the correction procedure under Results).
λ/nm | ξ Ar–ArH | α E | |
---|---|---|---|
Ti 399 | 399.864 | 0.457 | −0.350 |
H 121 | 121.467 | ||
C 165 | 165.701 | ||
N 149 | 149.262 | ||
O 130 | 130.217 | ||
Al 396 | 396.152 | 0.552 | −0.289 |
V 411 | 411.178 | 0.411 | −0.380 |
Independent bulk analysis of hydrogen in the samples under study was performed by inert gas fusion (IGF)7 using the G8 Galileo ONH analyzer, Bruker AXS GmbH, Germany. Depth distributions of heavy elements Ti, Al, and V after the sample was ground away (see below) were also established by energy-dispersive X-ray spectroscopy (EDX) using the instrument EDAX Octane Super 60 mm2, while a wedge-shaped groove was first created on the sample surface by a xenon focused ion beam (FIB) using scanning electron microscope (SEM) Tescan FERA 3, so that the resulting lateral dimension corresponding to the depth beneath the surface is over 200 μm. The microstructure of the hydrogenated TiAl6V4 material under study was established by electron backscatter diffraction (EBSD) using an FEI 3D Quanta 3D field-emission-gun DualBeam scanning electron microscope.
As glow discharge sputtering proceeds deeper into the sample, a peculiar behavior is observed: the hydrogen-rich zone beneath the oxide, the beginning of which is apparent in Fig. 1 at depths below ≈5 μm, extends down to ≈30 μm and is followed by a zone virtually free of hydrogen. To obtain information from greater depths than those accessible by glow discharge sputtering, the samples were ground, step-by-step, down to the depths of several hundred μm and analyzed by GDOES. The observed depth distributions after each grinding step were very similar: on top, there is always a hydrogen-rich zone, followed by a material virtually free of hydrogen, see Fig. 2, after ≈700 s of sputtering. This is surprising, as the average hydrogen content established by IGF is ≈0.6% throughout the sample and no signs of any discontinuities in hydrogen distribution were found by sectioning the sample and subsequent IGF analyses of individual sections. Also, the emission intensity of the H 121 line in the hydrogen-rich zone is much higher than what would correspond to the actual hydrogen concentration established by IGF. Hydrogen concentrations, as resulting from GDOES analyses based on the calibration by TiH2, are therefore unrealistically high (see the plots in Fig. 1 and 2).
The concern in this work was about the composition rather than accurate depths, hence, the profiles shown in Fig. 2 are displayed as composition versus time of sputtering instead of composition versus depth, so that H-effects on excitation processes (emission yields) of the other elements can be separated from intensity variations caused by a drop of the sputtering rate, also related to the presence of hydrogen.11 In this way, the interpretation of the resulting GDOES depth profiles can be simplified. Linear hydrogen corrections of the type
![]() | (2) |
αE = η(ξAr–ArH(E) − 1) | (3) |
The results described above suggest that, most likely, hydrogen from the bulk material in which it was uniformly distributed, diffuses during the GDOES analysis towards the analyzed surface and enters the discharge at a higher rate than without diffusion, leaving behind a zone depleted of hydrogen. There is a brief discussion of the mechanisms that are likely involved in the following section.
Temperature distribution T within the sample, beneath the analyzed surface, is a function of spatial coordinates and time, and is described by the heat conduction equation,17
![]() | (4) |
![]() | (5) |
![]() | (6) |
![]() | (7) |
![]() | (8) |
This equation can be solved analytically and its solution is
![]() | (9) |
![]() | (10) |
Temperature at the analyzed spot of such a bulk sample can then be roughly estimated by considering unidirectional heat flux perpendicular to the analyzed surface for r ≤ R, followed by radially symmetrical propagation of the heat, eqn (7), for r > R (see Fig. 3).
Heat propagation for r ≤ R can be treated based on eqn (6), separately for each segment (annulus) between (r, r + dr). The solution with a constant temperature T(R) at the hemisphere r = R, independent of the azimuthal angle, assumes a non-uniform temperature distribution over the analyzed spot, reaching a maximum at the center. Its average value can be estimated by replacing the hemisphere r = R by a cylinder, with the base at the analyzed spot and an effective thickness, Reff, equal to the averaged distance between the base and the surface of the hemisphere r = R. Simple geometrical considerations lead to the value Reff = ⅔R. According to eqn (6) and coming back to the model (notation) depicted in Fig. 3, the average surface temperature at the analyzed spot will be
![]() | (11) |
![]() | (12) |
This, combined with eqn (11), gives
![]() | (13) |
![]() | (14) |
If, instead of the ‘average’ temperature Ta, the temperature in the center of the analysed spot, Tm, is of interest, the factor ⅔ in eqn (11) needs to be replaced by one. Eqn (13) then becomes
![]() | (15) |
![]() | (16) |
By comparing this with eqn (6) it is possible to assess how the surface temperature of a thin sample will differ from the surface temperature in the center of the analyzed spot of a bulk sample at the same discharge conditions.
The samples described here were 3 mm thick slabs, ≈7.5 mm wide and 15 mm long, and the radius of the analyzed spot was R ≈ 1.2 mm. Such sample is neither “thin”, to conform with the presumptions of eqn (6), nor does it resemble a hemisphere. However, at such geometry, heat flux occurs at a non-negligible rate also in directions not perpendicular to the analyzed surface. Hence, an appropriate formula to estimate the surface temperature in the center of the analyzed spot is eqn (15), with R = 1.2 mm and Rs = 3 mm. The heat flux (U·i), for a discharge running at 850 V and 15 mA, is 12.75 W. The thermal conductivity coefficient at room temperature of Ti6Al4V is k ≈ 7 W m−1 K−1 and linearly increases with temperature, to ≈20 W m−1 K−1 at 1100 K (827 °C).18 With k = 7 W m−1 K−1, eqn (15) gives Tm = 648 °C. This means that the temperature dependence of k can in no way be neglected and the considerations presented above should be refined by solving eqn (4) and (7) with a temperature-dependent k instead of k being a constant. Or, for simplicity, eqn (15) can still be used for a raw estimate, however, with a higher thermal conductivity coefficient than the mentioned value of 7 W m−1 K−1. For example, for k = 12.74 W m−1 K−1, eqn (15) gives Tm = 365 °C. At this temperature, the function k = k(T) mentioned above gives exactly the same value of k (a self-consistent solution). The thermal conductivity coefficient deeper in the sample, for r > R, will be lower than the suggested value of 12.74 W m−1 K−1, and close to the surface it will be higher. For a more accurate estimate of Tm, the heat transfer equation would have to be solved with temperature-dependent thermal conductivity. The estimated temperature distribution within the sample, on the axis perpendicular to the analyzed area and going through its center, calculated for k = 12.74 W m−1 K−1, is given in Fig. 4. The depth of the erosion crater corresponding to 600 s of sputtering (Fig. 2), i.e., a typical depth l at which the effects under study occur, is only ≈30 μm, and temperature at such depths will be very close to the surface temperature of the sample (see Fig. 4). This is why the surface temperature is so important in these considerations.
![]() | ||
Fig. 4 The estimated temperature distribution along the line perpendicular to the analyzed area and crossing its center, for k = 12.74 W m−1 K−1, according to the model described in the text. |
Ti6Al4V is a duplex alloy consisting of two phases: a hexagonal close-packed phase (hcp, α) and a body-centered cubic phase (bcc, β). Hydrogen stabilizes the β phase, lowers the temperature of the α → β transition and changes the α/β ratio in the microstructure in favor of the β phase. At high hydrogen concentrations, precipitation of hydrides may occur. However, in the present study, no hydrides were observed by EBSD in the hydrogenated material and hydrogen is present largely as a solid solution in the β phase. Diffusivity of hydrogen in the β phase is much higher than in α, almost by 3 orders of magnitude at room temperature.19 The structure of the hydrogenated material, see Fig. 5, is composed of α lamellae in the β matrix, which, together with a dense network of grain boundaries, provides plenty of fast-diffusion pathways for hydrogen, facilitating its high diffusivity mentioned below.
![]() | ||
Fig. 5 The structure of the material under study, as revealed by electron backscatter diffraction (EBSD). Red: α phase (hcp), turquoise: β phase (bcc). |
The hydrogenated Ti6Al4V alloy was studied by hydrogen desorption measurements.5,16 A massive release of hydrogen from the bulk of such material was found to occur between 300 °C and 450 °C, however, the first desorption peak was observed at temperatures as low as ≈200 °C and assigned to hydrogen trapped at dislocations.5 The second peak, assigned to hydrogen trapped at grain boundaries, occurred at ≈320–340 °C.5 A further hydrogen evolution at 450–500 °C was assigned to the decomposition of hydrides,5 which, however, are not present in the material reported here. This means that, in GDOES analysis, an excess flux of hydrogen to the discharge indeed occurs, beyond what would correspond to the flux generated by the sputtering of a material with the originally constant hydrogen concentration. This excess hydrogen comes from the depth of the sample and its transport towards the surface causes gradual depletion of the originally hydrogen-rich subsurface layers. The rate of this transport can be estimated as follows: the diffusion coefficient D of hydrogen in Ti6Al4V exhibits an Arrhenius-type temperature dependence,
![]() | (17) |
ΦH(r, t) = D(r, t)∇cH(r, t) | (18) |
![]() | (19) |
The emission intensity IH(t) of the hydrogen line will no longer reflect the original depth distribution of hydrogen within the sample, cH(x, t = 0), where x is the same coordinate as that used in the one-dimensional notation in eqn (5), but the instantaneous surface concentration of hydrogen at the time of sputtering, cH (x = 0, t), where cH (x = 0, t) is the solution of eqn (19), plus the additional flux of hydrogen due to diffusion.
As the hydrogen-depleted zone grows thicker and becomes exposed to the discharge, it ultimately becomes a barrier for further hydrogen transport from the depth and the hydrogen emission intensity will drop, in conformance with the observation. Moreover, the excess flux of hydrogen in the early stages of the analysis impairs hydrogen quantification in GDOES depth profiles if this effect is not accounted for in calibration, also in conformity with the observations. The depth at which an almost complete depletion by hydrogen occurs is l ≈ 30 μm, after ≈600 s of sputtering (see Fig. 2). Considering the value of D mentioned above, the characteristic diffusion velocity D/l would be ≈13 μm s−1, which is more than two orders of magnitude higher than the sputtering rate of the sample§, ξ ≈ 30 μm/600 s = 0.05 μm s−1. This is why a virtually hydrogen-free zone develops below the sputtered surface.
Besides that, the resulting hydrogen depth profiles may also be distorted by the redistribution of hydrogen beneath the analyzed surface, due to the elevated temperature below the analyzed spot. It was shown that such transport of hydrogen occurs in the analysis of hydrogenated 3D-printed Ti6Al4V. Hydrogen from deeper-lying layers of the sample diffuses towards the surface and causes an excess flow of hydrogen to the plasma, beyond what would correspond to the sputtering of the sample material with a constant bulk concentration of hydrogen. Not only does this enhance hydrogen emission intensities in the beginning of the analysis, but also a hydrogen-depleted zone gradually develops below the layer being sputtered, hydrogen transport through this zone is hindered, and, after some time of sputtering, hydrogen emission intensities drop. These variations of the hydrogen signal in GDOES analysis of such materials should not be misinterpreted as an originally uneven hydrogen distribution (prior to the analysis). If hydrogen is present only in the top-most layer of the sample and the depth profile extends deeper into the material, the total amount of hydrogen can still be established by integration: all the hydrogen present ultimately enters the plasma and the diffusion within the sample will only change the depth scale, however, the integral of the hydrogen depth profile across the whole analysed depth will remain virtually unaffected.21
To suppress hydrogen transport in the sample during analysis, a more efficient sample cooling would be necessary, down to cryogenic temperatures. Such cooling should be turned on only after the sample is placed onto the Grimm lamp and the discharge region pumped down, to avoid the condensation of atmospheric moisture on the surface to be analyzed. Also, the sealing of the discharge source against the atmosphere should be taken care of, as the common fluorocarbon (Viton) o-rings get stiff below ≈−26 °C.22 Another possibility would be to reduce the power dissipated in the sample by working with pulsed discharge with a small duty cycle instead of the constant dc mode of operation. A drawback of this method is a reduced sputtering rate, unwelcome when deep depth profiles are analyzed.
The concepts and considerations presented here are applicable also in GDOES analysis of other hydrogen-containing materials such as e.g. electrodeposited metallic coatings or coatings prepared by chemical vapor deposition (CVD) with hydrogen-containing precursors such as CH4, SiH3, PH3, B2H6, etc. The procedure to estimate the surface temperature of a sample in GDOES analysis, as described in Section 4, may also be useful when analysing materials with a poor thermal conductance or various thermally labile substances or layers. It is worth mentioning that cathode heating is an issue also in glow discharge mass spectrometry (GDMS).23
Footnotes |
† This adjective is used here to distinguish the samples to be analysed (= “unknown”) from calibration measurements, in which “known” reference materials are measured, to collect calibration data. |
‡ Sample radius, R0, cancels itself in expressing the constant b and does not figure in the final formula. |
§ Unlike the quantity qM from eqn (1), i.e., sputtered mass per unit time, ξ is the sputtered depth per unit time. |
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