Interfacial band bending and suppressing deep level defects via Eu-MOF-mediated cathode buffer layer in an MA-free inverted perovskite solar cell with high fill factor

Tahir Imran; Hafiz Sartaj Aziz; Tayyaba Iftikhar; Munir Ahmad; Haibing Xie; Zhenghua Su; Peiguang Yan; Zonghao Liu; Guangxing Liang; Wei Chen; Shuo Chen

doi:10.1039/D4EE02894E

Interfacial band bending and suppressing deep level defects via Eu-MOF-mediated cathode buffer layer in an MA-free inverted perovskite solar cell with high fill factor†

Tahir Imran,

^a Hafiz Sartaj Aziz,^a Tayyaba Iftikhar,^b Munir Ahmad,^a Haibing Xie,^c Zhenghua Su,

^a Peiguang Yan,

^a Zonghao Liu,^d Guangxing Liang,

*^a Wei Chen*^d and Shuo Chen

*^a

Author affiliations

* Corresponding authors

^a Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
E-mail: lgx@szu.edu.cn, chensh@szu.edu.cn

^b Guangdong Key Laboratory of Biomedical Measurements and Ultrasound Imaging, School of Biomedical Engineering, Shenzhen University Medical School, Shenzhen University, Shenzhen 518060, China

^c Institute for Advanced Study, Shenzhen University, Shenzhen, Guangdong 518060, China

^d Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, China
E-mail: wnlochenwei@hust.edu.cn

Abstract

Perovskite solar cells (PSCs) utilizing lead halides stand out as promising options within photovoltaic technology, characterized by their remarkable efficiency, cost-effectiveness, and scalable fabrication methodologies, as their efficiency approaches 26.1% in a single junction solar cell. To solve the problem of deep-level surface defects and regulate band alignment at the interfaces, lead thiocyanate (Pb(SCN)₂) as an additive is utilized in FACsPbI₃-based PSCs. Additionally, a novel europium metal oxide framework (Eu-MOF) integrated into the buffer layer was demonstrated to partially infiltrate into PCBM, influencing the interfacial band bending. This cathode buffer layer (CBL) enhances electron transport while impeding the hole backflow at the back cathode interface. The Pb(SCN)₂ constituted device with Me-4PACz as the HTL and Eu-MOF modified CBL in the inverted structure boosted the efficiency up to 25.11% with excellent current density and fill factor of 25.85 mA cm⁻² and 85.11%, respectively. The champion device maintained 94% of its initial efficiency after 1000 h aging under a white LED equivalent of 1-sun illumination in ambient air at 65 °C.

Energy & Environmental Science

Interfacial band bending and suppressing deep level defects via Eu-MOF-mediated cathode buffer layer in an MA-free inverted perovskite solar cell with high fill factor†

Abstract

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Interfacial band bending and suppressing deep level defects via Eu-MOF-mediated cathode buffer layer in an MA-free inverted perovskite solar cell with high fill factor

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