Open Access Article
Kangjae
Lee‡
ab,
Jaehyuk
Shim‡
ab,
Hyunsoo
Ji‡
ab,
Jungho
Kim
f,
Hyeon Seok
Lee
ab,
Heejong
Shin
ab,
Megalamane S.
Bootharaju
ab,
Kug-Seung
Lee
c,
Wonjae
Ko
ab,
Jaewoo
Lee
ab,
Kang
Kim
ab,
Seungwoo
Yoo
ab,
Sungeun
Heo
ab,
Jaeyune
Ryu
ab,
Seoin
Back
*f,
Byoung-Hoon
Lee
*de,
Yung-Eun
Sung
*ab and
Taeghwan
Hyeon
*ab
aCenter for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
bSchool of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
cPohang Accelerator Laboratory (PAL), Pohang University of Science and Technology (POSTECH), Pohang, Republic of Korea
dKU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02481, Republic of Korea
eDepartment of Integrative Energy Engineering, College of Engineering, Korea University, Seoul 02481, Republic of Korea
fDepartment of Chemical and Biomolecular Engineering, Institute of Emergent Materials, Sogang University, Seoul 04107, Republic of Korea
First published on 25th April 2024
Universal incorporation of metals into cobalt spinel oxide (CSO) has emerged as a versatile and promising strategy to enhance catalytic performance. However, the uncontrolled reactivity of early transition metal and metalloid precursors with water has presented a significant challenge in achieving atomic-scale metal incorporation within CSO. This study presents a groundbreaking approach for the atomic-scale integration of diverse dopants, including Hf, Ta, W, Ti, Pd, Ga, and Ge, while elucidating the atomic stabilization sites for these metal cations within CSO. Notably, certain metals, such as Ta, W, and Ge exhibit greater stability at the surface rather than within the core of CSO, resulting in a Co2+-enriched surface that serves as a both catalytically active and protective shell. Exploiting these remarkable features, Ta-doped Co3O4 demonstrates the lowest overpotential, registering a mere 378 mV at 10 mA cm−2, while maintaining its catalytic activity for over 140 hours in acidic electrolyte.
Broader contextSpinel oxides with AB2O4 crystal structure have attracted significant attention due to their versatility in accommodating various metal compositions and the corresponding range of physicochemical properties. Cobalt spinel oxide, for instance, shows promise as a cost-effective catalyst for oxygen evolution reaction (OER). However, incorporation of metal elements into cobalt spinel oxide has been predominantly limited to first-row transition metal elements. Herein, we incorporate a wide range of elements into cobalt spinel oxide from early-transition metals to metalloids (including Hf, Ta, W, Ti, Ga, Ge, and Pd), which offers new possibilities. In addition, our research pinpoints specific stabilization sites for these metal elements within cobalt spinel oxide, with Ta, W, and Ge predominantly stabilized on the surface, resulting in a significant increase in surface Co2+ species. This dopant-enriched shell serves both as an active layer and a protective layer, enhancing the performance of acidic OER. Leveraging these remarkable features, Ta-doped Co3O4 demonstrates the lowest overpotential, registering a mere 378 mV at 10 mA cm−2, while maintaining its catalytic activity for over 140 hours in acidic electrolytes. |
Designing catalytic systems for the oxygen evolution reaction (OER) in acidic conditions is a subject of great interest.17–21 The primary challenge in advancing acidic OER lies in the slow kinetics and the reliance on precious metals like Ru and Ir.22–25 Notably, the CSO system has showcased substantial potential as a non-noble metal catalyst for acidic OER, offering a promising alternative to scarce and expensive noble metals.26–28 A key strategy to address these challenges involves the deliberate incorporation of metal cations into a specific cobalt oxide platform.29 Despite the suggested approach, current research has been predominantly limited to the integration of first-row transition metal ions, such as Fe, Mn, Ni, Cu, and Zn, which limits the range and scope of potential enhancements in the catalytic performance and durability of Co3O4.30–34 Establishing a universal synthetic protocol enabling the incorporation of a diverse range of metal cations into the CSO system would usher in a new realm of possibilities for exploring novel catalytic materials.35,36
However, the process of identifying and effectively incorporating suitable cations for substitution in CSO remains elusive, primarily due to the limited understanding of the physicochemical characteristics governing the integration of a diverse range of metal cations into CSOs. Moreover, the inclusion of third-row early transition metals, such as Hf, Ta, and W, poses an even more intricate challenge, given their uncontrolled reaction with water, often leading to the undesired formation of heterogeneous oxides.37,38 This chemical reaction obstructs the precise atomic-scale incorporation of these metals into Co3O4,39,40 preventing the synthesis and catalytic applications of single atom catalysts based on third-row early transition metal doped in CSO.41
In this work, we provide a comprehensive understanding of the incorporation of metal cations into CSO. First, we have developed a versatile synthetic method that enables synthesizing various metal-doped CSO materials, including metal cations from early transition metals and metalloids. The metal organic framework (MOF) played a pivotal role in the successful synthesis of Hf, Ta, W, Ti, Pd, Ga, and Ge-incorporated CSO without the unwanted formation of hetero-metal-oxide species. Secondly, we have elucidated that each metal species occupies distinct stabilization sites within the cobalt spinel structure. Ta, W, and Ge tend to stabilize at the octahedral sites on the surface of CSO, significantly increasing the surface Co2+ species. This dopant-rich shell and the high density of surface Co2+ provide active and protective layers, resulting in high-performance in acidic OER. For instance, Ta-doped Co3O4 exhibited the lowest overpotential of 378 mV at 10 mA cm−2, and maintained its activity for over 140 hours in acidic electrolytes. Our in situ X-ray absorption spectroscopy (XAS) and inductively coupled plasma (ICP) analysis indicate that this protective shell effectively suppresses over-oxidation and the dissolution of Co species during the reaction.
Powder X-ray diffraction (XRD) analysis revealed the presence of peaks corresponding exclusively to CSO crystal planes, indicating that no secondary heterogeneous metal phases were formed during the oxidation process (Fig. S3, ESI†). Atomic-resolution high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) clearly showed the atomic-scale incorporation of metal dopants throughout the CSO (Fig. 1b–d). In conjunction with the STEM images, we conducted XAS to gain deeper insights into the local atomic structure of single-atom dopants. According to the X-ray absorption near edge spectroscopy (XANES) and X-ray photoelectron spectroscopy (XPS) data, the single-atom metal dopants possessed oxidation states similar to their metal oxide counterparts (Fig. 1e–g and Fig. S4, ESI†). However, the peak shape of the white line for the dopants differentiates from that of their respective metal oxide references. Specifically, upon the incorporation of metal dopants into the cobalt spinel structure, only peak broadening was observed for Hf, whereas peak splitting into two different peaks was observed for Ta and W in L3-edge XAS spectra. The Hf, Ta, and W L3-edge XAS spectra illustrate the transition of core electrons from the occupied 2p to the vacant 5d states of the respective metals. The observed peak splitting in the L3-edge spectrum results from the increased energy gap between the t2g and eg states within the 5d orbitals. This phenomenon can be attributed to the robust octahedral hybridization of orbitals due to enhanced metal-oxygen coordination. These results reveal that the Hf, Ta, and W atoms are effectively stabilized in the octahedral sites of CSO.43 This arrangement would foster enhanced orbital hybridization between the metal dopants and CSO, leading to the broadening of the 5d orbital energy gap. Furthermore, the extended X-ray absorption fine structure (EXAFS) analyses indicate the atomic dispersion of metal dopants, as the bond length between metal and oxygen slightly decreases upon the incorporation of dopants into the CSO structure (Fig. 1h–j).
In addition to early transition metals from the sixth row of the periodic table, including Hf, Ta, and W, we successfully incorporated Pd, Ga, Ge, and Ti dopants into the CSO using the same synthetic procedure. The characterization data, including STEM, energy-dispersive X-ray spectroscopy (EDS), and EXAFS, consistently confirm the atomic dispersion of single-atom dopants within the CSO (Fig. S5–S8, ESI†).
Unlike XPS, which offers surface-specific information, the Co K-edge XAS data provide insights into the bulk properties. As shown in Fig. 2b, all the metal-doped CSOs exhibit a uniform XANES structure and oxidation state, indicating that the Co oxidation state within the bulk oxide remains nearly unchanged. Moreover, the Co K-edge EXAFS, as shown in Fig. 2c, revealed no discernible differences in the local structure of the bulk CSO. Therefore, in contrast to the cobalt species on the surface, it appears that the bulk cobalt species remain unaffected by the incorporation of various types of metal ions. These combined data from XANES and XPS reveal that the dopants are primarily stabilized on the surface rather than within the bulk of CSO.
To characterize the specific sites of the stabilized metal dopants, we calculated the atomic ratio between metal dopants and cobalt on both the surface and the bulk of CSO. The atomic ratio of the surface (Msurf = (atomic percent of metal dopants by XPS)/(atomic percent of Co by XPS)) was derived from the XPS results (Table S2, ESI†) and the atomic ratio of the bulk (Mbulk = (atomic percent of metal dopants by ICP-AES)/(atomic percent of Co by ICP-AES)) was calculated based on the ICP-AES data (Table S3, ESI†). A high Msurf/Mbulk ratio (group 2) implies that the metal dopants are predominantly stabilized on the surface of CSO, whereas a low Msurf/Mbulk ratio (group 1) suggests that the metal dopants are evenly distributed throughout both the surface and bulk sites. Notably, Ta, W, and Ge exhibit high Msurf/Mbulk ratios, exerting a considerable impact on the surface electronic structure and leading to a high density of surface Co2+ species (Fig. 2d). On the other hand, Pd, Ga, Hf and Ti demonstrate low Msurf/Mbulk ratios, which have minimal influence on the surface properties of CSO. We further calculated the stabilization energies of two slab structures: one with a dopant located in the first layer and the other with the dopant in the third layer. We assume that these positions correspond to the surface and the bulk position, respectively (Fig. S10 and S11, ESI†). The qualitative results are generally in agreement with the experimental observations, where Ta, Ge and W with large energy differences between two layers show a preference for surface positions, whereas Ga, Pd, Ti and Hf tend to prefer bulk positions.
From all these data, we conclude that the choice of metal dopants significantly impacts the surface characteristics of CSO, as illustrated in Fig. 2e. Notably, Ta, W, and Ge, categorized as group 2 metals, result in CSOs with dopant-rich shells that contain a high density of Co2+ species on the surface. This result is corroborated by energy-filtered transmission electron microscopy (EF-TEM) and XPS depth profile. EF-TEM images demonstrate the uniform coverage of the surface with Ta single atoms (Fig. S12, ESI†). XPS depth profile shows that Ta is more stabilized on the near surface rather than in the bulk (Fig. S13, ESI†). Because increased content of Ta species near the surface affects the peripheral Co electronic structure, Co species located closer to the surface tends to be more reduced, which is supported by Co 2p angle resolved-XPS (AR-XPS) spectra (Fig. S14, ESI†). Moreover, we analyzed the Bader charges of Co atoms before and after the Ta doping (Fig. S15, ESI†). The Bader charge values of Co atoms near the Ta dopant decrease by 0.15, which is consistent with Co 2p XPS. Additionally, scanning electron microscopy (SEM) analysis reveals that the dopant-rich shell serves as a protective layer,45 preserving the dodecahedron morphology of ZIF-67 during calcination in the air (Fig. S16, ESI†).
:
5) and Ta1Co3−xO4 (10
:
1), representing higher and lower Ta content compared to Ta1Co3−xO4, respectively (as detailed in Table S4, ESI†). In both cases, while the activity exhibited a decrease compared to Ta1Co3−xO4, it remained superior to that of the bare Co3O4. We then investigated the OER catalytic activity of Ta1Co3−xO4, where Co1 is Co atom located right next to the Ta dopant, while Co2 is the one far from the Ta single atom (Fig. S17, ESI†). The pristine Co3O4 is known to bind OER adsorbates weakly, making the *OH adsorption a rate-determining step (RDS) with the ηOER of 0.554 VRHE.10 Once the Ta is doped, the binding affinity of OH* increased, changing the RDS to *O and *OOH formation for Co1 and Co2, respectively. ηOER decreased to 0.334 VRHE for Co1 and 0.489 VRHE for Co2. In contrast, the Ta single atom exhibited a high ηOER of 0.933 VRHE with the *OOH formation step being the RDS. This indicates that incorporation of Ta within Co3O4 could enhance the OER activity, primarily by activating surface Co species. In Fig. 3c, we provide a summary of the overpotentials required to achieve a current density of 10 mA cm−2 for all the measured samples. Notably, the most active Ta1Co3−xO4 catalyst demonstrated an overpotential of 378 mV, 88 mV lower than that of Co3O4. Taken together, these studies demonstrate the significance of precise and controlled metal incorporation as a powerful tool for optimizing the OER performance of CSO systems (Table S5, ESI†).
We further investigated the durability trends across all the samples by comparing the increases in their overpotentials at a current density of 10 mA cm−2 (Fig. 3d). The metals with the high Msurf/Mbulk ratios (Ta, W, and Ge) showed a striking enhancement in acidic OER stability, suggesting that the dopant-rich shell could effectively function as a protective barrier in the face of harsh oxidative conditions. Among these, Ta1Co3−xO4 exhibited the most remarkable catalytic stability with no discernible decay in its activity observed over a 140-hour period, recording a degradation rate of 1.04 mV h−1. In contrast, Co3O4 exhibited a rapid deterioration in activity after 19 hours, with a degradation rate of 11.67 mV h−1, 11 times higher than that of Ta1Co3−xO4. Additionally, we assessed the stability of Ga1Co3−xO4 as a representative of metals belonging to the low Msurf/Mbulk group (encompassing Ga, Hf, Ti, and Pd), which displayed minimal progress in terms of oxidative stability.
To further analyze the catalytic stability of Ta1Co3−xO4 and Co3O4, we quantified the degree of cobalt ion dissolution following 24 hours of operation in an acidic OER environment (Fig. 3e).48 The ICP results reveal that the introduction of Ta to the Co3O4 surface effectively mitigated the dissolution of cobalt species. Once the surface was stabilized during the reaction, Ta1Co3−xO4 displayed a notably stabilized trend in dissolution, in stark contrast to the continuous dissolution observed in Co3O4. We calculated S-number based on the ICP results at 6-hour and 18-hour intervals (Fig. S18, ESI†). For Ta1Co3−xO4, the S-number values were approximately 2.148 × 103 at the 6-hour mark and 5.138 × 103 at the 18-hour mark. In contrast, the S-number values for Co3O4 were approximately 1.730 × 103 at 6 hours and 2.130 × 103 at 18 hours. These values differed significantly, with Ta1Co3−xO4 exhibiting a 1.24-fold at 6 hours and a 2.41-fold at 18 hours compared to Co3O4. This discrepancy shows the enhanced stability achieved through the incorporation of Ta on the surface, with the difference in stability becoming more pronounced as time progresses.
Furthermore, an in situ XAS study was conducted on Ta1Co3−xO4 to investigate changes in the electronic structure during electrochemical reaction (Fig. 4d). Remarkably, in situ XANES spectra of Ta1Co3−xO4 showed negligible alteration in oxidation state as the applied voltage increased in acidic electrolytes, demonstrating the dopant-rich shell and high density of surface Co2+ suppresses the overoxidation of Co species during OER.
Additionally, ex situ investigations of XPS were carried out on post-OER samples (Fig. 4e).49 The distinct Co2+ XPS peaks of Ta1Co3−xO4 were observed after OER, indicating that the Co2+ species in the form of Ta–O–Co are significantly more stable compared to Co3+ species in oxidative condition. The stability of the Ta single atom, as evidenced by the HAADF-STEM image, along with the absence of hetero-phase formation, supports the conclusion that the Co metal species in close proximity to the Ta single atom remain stable during OER. During the course of the reaction, the less stable surface Co3+ species dissolve, leaving behind Co2+ species alongside Ta dopants, which play a pivotal role in enhancing the durability of Ta1Co3−xO4 in acidic electrolytes. Conversely, the Co 2p XPS spectra of Co3O4 control exhibit minimal changes after OER, which can be attributed to the ongoing dissolution of surface Co species during the OER process. This observation is consistent with the findings from the aforementioned 24-hour ex situ ICP analysis, which revealed a persistent dissolution of Co ions in the Co3O4 control, while no further dissolution of Co was observed in Ta1Co3−xO4 after the initial 5 hours (Fig. 3e). Ta 4f XPS of Ta1Co3−xO4 showed that the oxidation state of Ta maintained after OER (Fig. 4f). We also calculated dissolution potentials (Udiss) of tetrahedral Co2+ atoms in both pure Co3O4 and Ta1Co3−xO4 to evaluate the stability of Co2+ species after the incorporation of Ta (Fig. S19, ESI†). A higher Udiss indicates higher stability against the dissolution during acidic OER. We found that the Udiss of tetrahedral Co2+ increased from 1.25 VSHE to 1.58 VSHE upon doping with Ta, signifying that Ta dopants effectively prevent the dissolution of tetrahedral Co2+. Collectively, the dopant-rich shell serves to preserve the presence of surface Co2+ species throughout the reaction, effectively inhibiting the dissolution of surface Co species.
To investigate the possibility of a newly constructed surface structure contributing to enhanced OER performance as Co3+ species dissolve, we conducted CS-TEM analysis on the catalyst surface after OER. It turned out that lattice near the surface maintained the initial CSO structure without forming new amorphous or crystalline surface structures (Fig. S20, ESI†). Moreover, the Co L-edge XAS spectra of post-OER catalysts consistently show an absence of alteration in the surface structure after acidic OER (Fig. S21, ESI†).
:
1).
Ta1Co3−xO4 (10
:
1) was synthesized using the same procedure employed for the synthesis of Co3O4, except that Ta(CH3CH2O)5 was used during the synthesis of ZIF-67. 0.2 mmol of Ta(CH3CH2O)5 was well dispersed in MeOH solution. Maintaining the total volume of the solution at 80 mL, all solutions were mixed together with vigorous stirring to obtain violet solution.
:
5).
Ta1Co3−xO4 (10
:
5) was synthesized using the same procedure employed for the synthesis of Co3O4, except that Ta(CH3CH2O)5 was used during the synthesis of ZIF-67. 1 mmol of Ta(CH3CH2O)5 was well dispersed in MeOH solution. Maintaining the total volume of the solution at 80 mL, all solutions were mixed together with vigorous stirring to obtain violet solution.
:
8, along with 30 μl of a 5% Nafion solution. Subsequently, the resulting mixtures underwent ultrasonication for approximately 1 hour to achieve uniform ink dispersion. Using a spin-coating technique, 17.64 μl of the dispersed ink was deposited onto a glassy carbon electrode, resulting in a catalyst loading of 0.45 mg cm−2. Subsequently, linear sweep voltammetry (LSV) with an 100% iR correction was conducted at an ambient temperature of 25 °C, employing a scan rate of 0.01 V s−1 and a working electrode rotating at 1600 rpm. For stability assessments on carbon papers, 5 mg of the catalyst was dispersed in a 1 mL solution consisting of 970 μl isopropanol and deionized (DI) water in a volume ratio of 8
:
2, complemented by the addition of 30 μl of a 5% Nafion solution. Following approximately 1 hour of ultrasonication, the resulting ink was evenly deposited onto a carbon paper substrate via air spraying, achieving a loading of 3 mg cm−2. To ensure accurate mass loading, the carbon paper's weight was measured both before and after the air spraying process. In the case of the commercial IrO2 catalyst, the loading was adjusted to 1 mg cm−2.
The S-number values were calculated from the catalyst on a carbon paper during the stability test. The S-number was calculated according to eqn (1),
A four-layered cobalt spinel (001) slab structure was modelled using the corresponding optimized bulk structure (mp-18748). A vacuum space of 15 Å was added in the z-direction and the bottom two layers were fixed to their bulk positions. Starting with this optimized slab structures, transition metal doped structures were created by substituting the octahedral Co in the first and the third layer with dopant atoms. We note that the positions of the dopant in the first and third layers represent the surface and bulk positions, respectively. To calculate the dissolution potentials, defective structures were generated by removing octahedral or tetrahedral Co atoms from the first layer.
The theoretical overpotential for OER was calculated using the computational hydrogen electrode (CHE) method.57 This method equates the chemical potentials of the proton-electron pair (H+ + e−) with half of H2 gas under standard conditions. Following the adsorbate evolution mechanism (AEM),58 which involves four consecutive proton–electron transfers (* + H2O → *OOH → *O + H2O → *OH → * + O2), the Gibbs free energy change for each step was calculated as follows:
![]() | (1) |
![]() | (2) |
![]() | (3) |
![]() | (4) |
,
,
,
, GH2, GH2O are the Gibbs free energies of bare surface, O, OH, OOH-adsorbed surfaces, H2 and H2O gas, respectively. The Gibbs free energies were calculated by adding free energy correction values to DFT energies, where the correction term consists of zero-point energies, enthalpic and entropic contributions. These correction values were calculated using the Harmonic oscillator and the Ideal gas approximation for adsorbates and gas molecules, respectively, as implemented in atomic simulation environment (ASE).59 The theoretical overpotential was determined as the difference between the equilibrium potential of 1.23 V and the largest Gibbs free energy change, i.e., ηOER = max(ΔG1,ΔG2,ΔG3,ΔG4)/e − 1.23 V.
The electrochemical stability of Co against the dissolution was investigated considering the following reaction:
| Cox−1Oy + Coz+ + ze− ⇌ CoxOy | (5) |
| ΔGdiss = ECoxOy − ECox−1Oy − ECoz++ze− | (6) |
| = (ECoxOy − ECox−1Oy − ECo) + (ECo − ECoz++ze−) | (7) |
| = ΔGform,Co,Spinel + ΔGCo | (8) |
![]() | (9) |
is the standard reduction potential of Co, F is the Faraday constant, R is the gas constant and T is the absolute temperature, which was set to 298.15 K. [Coz+] is the concentration of Coz+, which was assumed to be 10−6 M.60 We note that the dissolution of Co as Co2+ was considered (Co2+ + 2 e− ⇌ Co, E° = −0.28 V), which is known to be more favorable than the formation of Co3+ (Co3+ + 3 e− ⇌ Co, E° = +0.45 V). The dissolution potential of Co (Udiss) is given by![]() | (10) |
Footnotes |
| † Electronic supplementary information (ESI) available. See DOI: https://doi.org/10.1039/d4ee00058g |
| ‡ These authors contributed equally to this work. |
| This journal is © The Royal Society of Chemistry 2024 |