Open Access Article
Carlos
Macchi
a,
Guilherme Magalhaes
Petinardi
b,
Leonardo Almeida
Freire
b,
Miriam Susana
Castro
c,
Celso Manuel
Aldao
d,
Thaís Marcial
Luiz
e,
Francisco
Moura
e,
Alexandre Zirpoli
Simões
f,
Henrique
Moreno
fg,
Elson
Longo
g,
Alberto
Somoza
a,
Marcelo
Assis
*h and
Miguel Adolfo
Ponce
a
aInstitute of Materials Physics of Tandil, IFIMAT (UNCPBA) and CIFICEN (UNCPBA-CICPBA-CONICET), Tandil, Argentina
bFunctional Materials Development Group (GDMaF), Federal University of Itajubá, (UNIFEI), Itajubá, Brazil
cInstitute of Materials Science and Technology (INTEMA), University of Mar del Plata and National Research Council (CONICET), Mar del Plata, Argentina
dInstitute of Scientific and Technological Research in Electronics (ICYTE), University of Mar del Plata and National Research Council (CONICET), Mar del Plata, Argentina
eAdvanced Materials Interdisciplinary Laboratory (LIMAV), Federal University of Itajubá (UNIFEI), Itabira, Brazil
fSchool of Engineering and Sciences, São Paulo State University (UNESP), Guaratinguetá, Brazil
gCDMF, Federal University of São Carlos (UFSCar), São Carlos, Brazil
hDepartment of Physical and Analytical Chemistry, University Jaume I (UJI) Castellón, Spain. E-mail: marcelostassis@gmail.com
First published on 30th November 2023
In this study, several methods were employed to investigate the electrical characteristics of β-Ag2MoO4 systems, both Eu-doped and undoped, synthesized using the microwave-assisted hydrothermal method. The focus extended to understanding how synthesis time influences material defects, with doping fixed at 1%. A systematic shift in the silver vacancy (VAg) concentration was observed within the doped β-Ag2MoO4 system. Specifically, this study demonstrated that the incorporation of Eu3+ into polycrystalline β-Ag2MoO4 initially increases the VAg concentration. However, as the synthesis time progresses, the VAg concentration decreases, resulting in alterations in the resulting electrical properties, arising from the intricate interplay between the number of grain boundaries and carrier density. By combining information obtained from photoluminescence, positron annihilation lifetime spectroscopy, and impedance spectroscopy, a comprehensive conduction mechanism was formulated, shedding light on both doped and undoped β-Ag2MoO4 systems.
The use of Ag2MoO4 has shown enhanced properties, which are size and morphology-dependent when in nanoparticulate form.8 Particularly, the morphology of nanoparticles can be finely controlled through advanced synthesis methods (e.g., precipitation, sonochemical, conventional and microwave hydrothermal, etc.).7,14–17 The initial synthesis of β-Ag2MoO4 crystals, as reported by Wyckoff et al., employed a solid-state reaction method, offering limited control over particle shape and size.18 Subsequently, Teodoro et al. investigated the impact of highly energetic facets on the photoluminescent (PL) response of β-Ag2MoO4 nanocrystals with varying sizes and shapes prepared using the microwave hydrothermal method.19 This is particularly relevant as semiconductor performance is intricately linked to the quantity and nature of defects, which can be influenced by the synthesis method. Moreover, the doping of β-Ag2MoO4 crystals has the potential to enhance their properties.20–22
One significant advantage of doping silver compounds lies in the possibility of incorporating rare earth elements. Rare earth metals (REs) exhibit unique optical properties, primarily attributed to 4f–4f or 5d–4f transitions stemming from their electronic configurations.23 Eu3+ ions, in particular, are known for their distinct and well-defined emission bands24 arising from their electronic configuration 4f,6 where the outermost electrons shield the inner ones.25,26 Consequently, Eu-doping has a profound effect on the PL properties of the host matrix.26 Additionally, the incorporation of Eu3+ can elevate the concentration of oxygen vacancies (VO).
The concentration of VO (e.g.,
,
,
) and silver vacancies (e.g.,
, VAg–O, etc.) plays a pivotal role in governing the electronic behavior of transition metal oxide (TMO) semiconductors.27 These vacancies arise due to electron–hole recombination within the bandgap region and deviations from the perfect crystal lattice, leading to a reduction in the interfacial reaction energy barrier.28 Hence, understanding and manipulating defects in semiconductors have emerged as potent tools for fine-tuning their performance. In 2019, Sudarshan et al. successfully synthesized pure and Dy3+ doped β-Ag2MoO4 using a co-precipitation method at room temperature.29 Their work demonstrated that Dy3+ induces cation vacancies and surface defects, as evidenced by positron annihilation lifetime spectroscopy (PALS), confirming Dy3+ stabilization at Ag+ sites.
Despite existing studies in the field of defects, shallow discussions have prevailed in this area of knowledge, highlighting a clear need for in-depth exploration. In the present study, β-Ag2MoO4 powders doped with Eu3+ were synthesized using the microwave-assisted hydrothermal method. The concentration of Eu3+ was held constant (1%), while the synthesis time was varied (4, 8, 16 minutes). All samples underwent characterization through a combination of XRD, Rietveld refinement, micro-Raman spectroscopy, diffuse reflectance spectroscopy (DRS), field emission scanning electron microscopy (FE-SEM), and photoluminescence (PL) emissions. To elucidate the nature of defects, measurements were conducted using PALS and impedance spectroscopy (IS). Finally, a conduction mechanism was proposed based on the observed behavior, taking into account the results of PL, PALS, and IS.
m space group. No secondary phase peaks were identified. The lattice and Rietveld parameters compiled in Fig. S1 and Table S1† demonstrate a coherent refinement, as evidenced by the Rietveld parameters (χ2, Rwp, Rbragg). In addition to the Rietveld parameters, Table S2† summarizes the values associated with atomic coordinates, occupancy factor and anisotropic thermal factor for all samples. It is worth mentioning that the Rietveld method was carried out fixating the occupancy factor parameters considering a 1% Eu-doping for all samples. Additionally, Fig. 1b highlights a peak shift associated with the (311) crystallographic plane towards higher Bragg angles (2θ), which may be attributed to the incorporation of Eu3+ ions at Ag+ sites within the β-Ag2MoO4 structure. This incorporation leads to the formation of Eu3+ clusters that replace three Ag+ clusters, resulting in lattice relaxation, polarization of the structure, and the formation of oxygen vacancies and silver vacancies (VO/VAg). Depending on the synthesis time, the crystalline structure acquires greater symmetry, resulting in different electronic densities in the VO/VAg and variations in the influence of the Eu clusters on the semiconductor properties. The behavior of β-Ag2MoO4 can be explained by complex VO that can exist in three different charge forms: neutral (
), singly ionized (
), and double ionized (
).30 This is corroborated by a slight increase in the unit cell volume from ∼806.7 Å3 (Pure) to 807.4 and 807.5 Å3 (4Eu and 8Eu, respectively), and 808.2 Å3 (16Eu) as the synthesis time increases. Using the Williamson-Hall method (Fig. S2†), microstrain values were calculated for the samples, revealing a decrease in values when compared to the pure sample. This indicates a decompression in the crystallites of the sample, consistent with the results obtained from Rietveld refinement.
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| Fig. 1 (a) XRD spectra of the samples and; (b) detailed analysis of the (311) plane. (c) micro-Raman spectra of the samples and; (d) detailed analysis of the A1g Raman mode. | ||
Fig. 1c shows the micro-Raman spectra collected at room temperature for all samples. According to the group theory, there are 16 vibrational groups possible for β-Ag2MoO4: A1g; Eg; 3T2g; T1g; 4T1u; 2A2u; 2Eu; and 2T2u, of which 6 (A1g + Eg + 3T2g + T1g) are Raman active, and mode T1u is detectable in infrared spectra. However, subscripts “g” and “u” indicate an inversion center in the β-Ag2MoO4 structure, leading to a total of five Raman active modes. At ∼95 cm−1 mode T2g may be associated with the mobility of O2− ions within the β-Ag2MoO4 structure.6,31 Mode Eg, detected at ∼275 cm−1 can be associated with vibrations of the [AgO6] octahedral.8,32 The band at around ∼348 cm−1 is attributed to the T2g mode, which in turn is related to bending vibrations of O–Mo–O bonds in [MoO4] clusters. The asymmetric stretching of these bonds is responsible for the T2g mode, which is ascribed to the band located at approximately ∼750 cm−1.8,32 At ∼670 cm−1, ν1 was assigned to the anti-symmetric vibrational F2g mode of [MoO4] polyhedra. Finally, A1g mode can be detected at ∼865 cm−1, corresponding to the symmetric stretching of Mo–O bonds in the [MoO4] tetrahedra.8,32 Analogously, the modes orbiting the A1g – ν2 (∼820 cm−1) and ν3 (∼895 cm−1) can be ascribed to anti-symmetric stretching in the [MoO4].31 Teodoro et al.19 reported peak broadening and the presence of shoulder-like peaks associated with the A1g mode in β-Ag2MoO4 synthesized by the hydrothermal microwave method. The authors linked this behavior with inelastic scattering (i.e., bond length changes, which vary the vibrational mode frequency).8,32,33 None of the samples had a significant position shift of Raman bands. However, Fig. 1d shows a slight increase in the intensity of mode A1g with Eu3+ incorporation, which may be related to the formation of VAg within the crystal structure.31,34 Increasing synthesis time leads to changes in the chemical environment capable of promoting tetrahedral distortions, increasing symmetry and, consequently, increasing the structural order at a short-range. In particular, the mode located at 865 cm−1 which corresponds to the stretching mode of the Mo–O bond in the tetrahedral [MoO4] cluster, can be considered as a signature of the structural change of the β-Ag2MoO4 lattice provoked by the increasing of the soaking time. From the Raman spectra we can noted that the obtained powders are free of impurities since no active modes are evident in the spectra. These results are in agreement with XRD data. As Eu3+ substitutes Ag+, VAg are formed and changes in the symmetry as well as in the periodicity of atoms with different degrees of ordering at short range distances. From the Raman measurements, we fitted the peaks using the Lorentzian peak function, which gave us the FWHM values seen in Table S3 and Fig. S3.† A high degree of disorder in the structure is observed as synthesis time raises. Eu3+ doping induces the formation of large cationic intergranular vacancies leading to local polarization, and affecting the distribution of the energy levels within the bandgap region.
Fig. 2a–d exhibits FE-SEM images of the as-prepared β-Ag2MoO4 samples. The pure sample displays an agglomerate of irregular particles with undefined geometry (1.75 ± 0.39 μm × 4.29 ± 0.96 μm). As Eu3+ is incorporated at Ag+ sites within the β-Ag2MoO4 structure, the micrograph images reveal the formation of well-defined cubic-shaped particles (4Eu, 0.98 ± 0.63 μm), which grow significantly with synthesis time (8Eu, 6.47 ± 1.22 μm; 16Eu 6.82 ± 0.87 μm). Small structures randomly distributed on the surface of the particles, and whose contribution increase with synthesis time, significantly increase superficial roughness. From Wullf's construction (Fig. 2e), one can observe the behavior of the morphology in relation to the surface energies imposed on the system. According to Foggi et al., the ideal β-Ag2MoO4 system has surface energies for the (001), (011), and (111) planes of 1.90, 1.28, and 3.46 J m−2.8 It is observed that the ideal morphology is characterized by the complete exposure of the (011) surface due to its lower energy. Therefore, different morphologies can be achieved by stabilizing the (001) and (111) surfaces. By stabilizing the surface energy of (111), an octahedral morphology is gradually reached, while stabilizing the surface energy of (001) leads to a gradual transition to a cubic morphology. This reduction in energy needs to be at least 1.28 J m−2 for complete exposure of the (001) surface. Consequently, it can be seen that Eu3+ plays a fundamental role as a dopant in stabilizing the (001) surface energy, allowing for its selective use in the design of new materials. This surface is composed of surface clusters [AgO5.VO], making it more active for photocatalytic and antimicrobial applications. This result is aligned with what was observed by Almeida et al.,3 where it is demonstrated that an increase in the concentration of Eu3+ in the β-Ag2MoO4 lattice results in the appearance of a small concentration of cubes. The concentration of cubes can be enhanced through the synthesis method, but previously works did not show selectivity for cubes,19,35,36 with Eu3+ being the primary morphology-directing agent.
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| Fig. 2 FE-SEM images of the samples (a) Pure, (b) 4Eu, (c) 8Eu, and (d) 16Eu. (e) Wullf construction of the β-Ag2MoO4 morphologies. | ||
Fig. 3a shows the PL emission spectra recorded at room temperature for all samples excited by a 355 nm. PL emissions between 400–550 nm form a broad excitation band associated with the β-Ag2MoO4 matrix, which was referred to as O2−/Eu3+ charge transfer band (CTB) by Dorenbos.38 This band can be considered as a combination of three charge transfer mechanisms, which are: (1) relocation of electrons from O2− to Mo6+; (2) transference of electrons between Eu3+ 4f states to Mo6+ valence band; and (3) electronic transition between filled up O2− 2p orbitals to vacant 4f Eu3+ orbitals. A broad emission in the blue region, between 390 and 550 nm (λmax ≈ 450 nm), is characteristic of the β-Ag2MoO4 matrix (Fig. 3b). Almeida et al.3 reported this behavior as a result of changes in the order of [MoO4] tetrahedra and [AgO6] octahedra, leading to local polarization, and affecting the distribution of the energy levels within the bandgap region. Thus, the PL emissions of the matrix are significantly determined by Ag–O/Mo–O distortions, due to their influence on the electronic properties of the material.28
The PL spectra (Fig. 3a) of the Eu-doped samples are significantly different from that of pure sample, showing sharp bands between 550 and 750 nm. These bands can be associated with inter configurational f–f electronic transitions (5D0 → 7FJ) in the Eu3+ ions occurring at 595 nm (5D0 → 7F1), 616 nm (5D0 → 7F2), 655 nm (5D0 → 7F3), and 703 nm (5D0 → 7F4).39 Some of these transitions are hypersensitive to the crystal field and may be useful for understanding the host lattice and local symmetry,39,40 while 5D0 → 7F1 transitions are insensitive to a local symmetry, 5D0 → 7F2 transitions correspond to electronic dipole transitions, which provide rich information on the local chemistry around Eu3+ ions39,41,42 As the (5D0 → 7F2) transition at 616 nm is more intense than (5D0 → 7F1) transition at 595 nm we can infer that Eu3+ ions are located in a site without inversion of symmetry. In this way, the relative area ratio of the 5D0 → 7F2 to 5D0 → 7F1 transitions provides information about the local distortions in the clusters into which Eu3+ cations have been incorporated within the structure.43 The values obtained for the 4Eu, 8Eu, and 16Eu samples were 3.66, 5.36, and 6.01, respectively. Consequently, it is observed that increasing the synthesis time in the microwave hydrothermal system leads to an increase in local distortions associated with the Eu3+ clusters within the crystal lattice. This outcome aligns with what has been observed thus far, as an increase in short and long-range order occurs with the synthesis time, resulting in greater distortions in the neighborhood of the Eu3+ atoms due to a more organized crystal lattice.
Fig. 3c shows a practical model explaining the luminescence mechanism in Eu3+-doped β-Ag2MoO4 samples. A source of light supplies energy and promotes electrons from O 2p levels in the valence band (VB), to the conduction band (CB), made up of Mo 4d levels. Light emission occurs as the excited electrons radiatively decay from the CB to the VB. The incorporation of Eu3+ ions within the β-Ag2MoO4 generates an alternate path to emissions, in which the excited electrons decay from the CB to excited levels of the Eu3+ cations located within the bandgap region before reaching the VB. First, occupied 4f states decay non-radiatively to Eu3+ characteristic emission levels (5D0) and then radiatively to fundamental states (7Fj, j = 1, 2, 3, and 4) emitting on specific characteristic lengths. Fig. 3d exhibits the PL-associated coordinates in the chromaticity diagram (CIE–Commission internationale de l'eclairage 1931)44 using a 355 nm wavelength light as excitation source. Our results indicate a significant red shift in PL emission at the chromaticity diagram as [MoO4]-[EuO8] energy transfer becomes more efficient. Hence, the Eu-doped samples are red phosphorus, and β-Ag2MoO4 can be considered a good host for red Eu3+ emission sensing. One can observe that as synthesis time increases, the correlated color temperature of the Eu-doped samples increase (see Table S4†), and its coordinates become closer to the edge, indicating the emission consists of purer red – lower contribution of other colors in the gamut emission.3,39 Also, β-Ag2MoO4 acts like a good matrix for receptor of Eu3+ cations due to the energy transfer from the [MoO4] to the [EuO8] clusters. Based on these results we can infer that europium is an excellent activator of the red emitting phosphor due to its low 4f → 4f absorption efficiency in the near ultraviolet region.
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| Fig. 4 (a) Nyquist plots (Z*) obtained at 140 °C. The inset shows the Z* plots at 40 °C. (b) Cp and (c) Rp total electrical behavior as a function of frequency (Hz) at 40 and 140 °C for all samples. | ||
Fig. 4b and c exhibit total parallel equivalent capacitance (Cp) and the total parallel resistance (Rp) as a function of frequency. These plots clearly show a decrease in resistance as the temperature increases, indicating thermally activated conduction mechanism. Additionally, the capacitance increases with temperature, which can be ascribed to the activation of electronic traps as the temperature rises. The grain boundary capacitance could be extracted from the results at a high enough frequency. In the present case, values for the highest frequency we can reach (∼106 Hz) seem to be still decreasing with frequency, and, especially, they are very small to have confidence on the exact values that could be measured. On the other hand, the observed capacitance for f = 100 Hz mainly corresponds to the contribution of traps at the contacts. From the observed semicircles in the Nyquist plots, we can determine the grain boundary resistance (Rgb). On the Nyquist plots obtained at 40 °C, Rgb values can be determined from the only detected semicircle, whereas at 140 °C, Rgb values are those associated with the high-frequency semicircle. These results are displayed in Fig. 5a. At both 40 and 140 °C, the resistance decreases with the incorporation of Eu3+ within the β-Ag2MoO4 structure up to 8 minutes holding time (8Eu). Then Rgb increases for the sample 16Eu. Fig. 5b shows the capacitance (C) estimated at 100 Hz. Analogously to the Rgb, C increases in the Eu-doped samples, reaching a maximum for sample 8Eu, for sample 16Eu the Cgb values decrease. This result is consistent and can be ascribed to conductance through tunneling. Likewise, an increase in the value of C may be related to the narrowing of the depletion layer. The changing trend in Rgb and C found when the synthesis time changes from 8 to 16 minutes indicates a lowering density of Vag associated. It is worth noting that a defect density increase would be competing with structural changes during the synthesis. Indeed, larger grains would imply a lower number of interfaces and, hence, lower resistance and larger capacitance. However, structural changes cannot explain the larger value of Rgb and the lower values of C for sample 16Eu. This would indicate a lower acceptor density (Vag) since we are dealing with a p-type semiconductor, as explained by Lacerda et al.46 Then, in order to corroborate previous interpretations, in the following section an analysis of PALS is presented.
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| Fig. 5 (a) Grain boundary electrical resistance (Rgb) at 40 and 140 °C. These values were determined from the only detected semicircle at 40 °C in Fig. 4a. Instead at 140 °C the Rgb values are those associated with the high-frequency semicircle, and (b) shows the capacitance (c) estimated at 100 Hz (grain boundary capacitance (Cgb)). At both 40 and 140 °C the grain boundary capacitance values are associated at low frequency semicircle of Fig. 4a. | ||
Under this scenario, the relevant physical information regarding the changes occurring in the defect structure (nature and concentration of defects) due to doping of β-Ag2WO4 sample with Eu3+ and varying the synthesis time can be found in the first and second lifetime components. Positron lifetime and intensity parameters obtained from the PALS spectra decomposition for the different measured samples are presented in Fig. 6 As can be seen, for the pure sample, the first lifetime component is characterized by a lifetime of ∼183 ps and an associated intensity of ∼57% while the second lifetime component has a larger lifetime of ∼350 ps with an intensity of ∼43%. The addition of Eu3+ causes a rise in both positron lifetimes; τ1 value increases up to ∼201 ps and τ2 up to ∼375 ps. Moreover, the intensity I2 dropped at approximately 40%. The increase in the synthesis time provokes a systematic drop in τ1 values, ranging from ∼201 ps for the 4Eu sample up to ∼186 ps for the 16Eu sample. The same behavior can be observed in τ2 values, which vary between ∼375 ps and ∼350 ps for the 4Eu and 16Eu samples, respectively. Regarding the associate intensity to this component, I2 values increase with the synthesis time, from ∼40% to ∼46% for the 4Eu and 16Eu samples, respectively.
As usual in the literature when studying PALS using nanostructured powder-based systems, the second temporal component is attributed to the trapping and subsequent annihilation of positrons in extended volume defects, typically clusters of vacancies (VC) present on the surface of the nanograins or in the intergranular spaces, i.e., intergranular defects. Conversely, the shorter lifetime component is usually assigned to the trapping and subsequent annihilation of positrons in smaller defects, typically monovacancies located within the nanograins, known as intragranular defects.49–51 In complex systems, to analyze and interpret the information obtained from PALS is often challenging. One of these challenges is to obtain a reference sample representing a perfect crystal with a low enough defect concentration. PALS is an inherently comparative technique that relies on appropriate reference samples of the material under study. Additionally, these oxides can have coexisting vacancies of different types. In such cases, performing first-principles calculations of positron states is extremely useful for interpreting the measured lifetimes.50,52,53 In the present work, we have used the simplest calculation scheme to calculate the theoretical positron lifetimes for the bulk and different vacancy states that could be present in the pure β-Ag2WO4 structure. The details of the calculation procedure are reported by Espinosa et al.52 To model the pure β-Ag2WO4 lattice, we have used a supercell containing 448 atoms (2 × 2 × 2 replication of the cell used for the Rietveld refinement). In such a structure, a VO was created by removing an O atom; a molybdenum vacancy (VMo) by removing a Mo atom and a VAg by removing an Ag atom, all of them located in the center of the supercell. For the different positron states, the theoretical positron lifetime (τ) and the positron binding energy (Eb) were calculated, and the obtained results are reported in Table 1. The parameter Eb is defined as the difference between the ground energy of the delocalized positron and the energy of the positron trapped in the considered defect.50 A positive Eb value indicates that the considered defect acts as an effective positron trap.
| Positron state | τ (ps) | E b (eV) |
|---|---|---|
| Bulk | 163.9 | — |
| VO | 167.0 | −0.10 |
| VMo | 180.1 | +0.32 |
| VAg | 223.1 | +0.48 |
Footnote |
| † Electronic supplementary information (ESI) available. See DOI: https://doi.org/10.1039/d3dt03385f |
| This journal is © The Royal Society of Chemistry 2024 |