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Correction: First-principles calculations of interfacial thermal transport properties between SiC/Si substrates and compounds of boron with selected group V elements
Zhehao
Sun
,
Kunpeng
Yuan
,
Xiaoliang
Zhang
* and
Dawei
Tang
*
Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy and Power Engineering, Dalian University of Technology, Dalian, 116024, China. E-mail: zhangxiaoliang@dlut.edu.cn; dwtang@dlut.edu.cn
First published on 7th August 2024
Abstract
Correction for ‘First-principles calculations of interfacial thermal transport properties between SiC/Si substrates and compounds of boron with selected group V elements’ by Zhehao Sun et al., Phys. Chem. Chem. Phys., 2019, 21, 6011–6020, https://doi.org/10.1039/C8CP07516F.
Fig. 7 was shown incorrectly, the correct Fig. 7 is shown herein.
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| Fig. 1 Interfacial thermal conductance as a function of atomic masses. The black straight line is atomic mass of compounds of boron with group V elements. The blue and red straight lines represent the atomic mass of SiC and Si, respectively. The circles are the calculated values of interfacial thermal conductance. | ||
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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