Gamma-induced stress, strain and p-type doping in MBE-grown thin film MoTe2

Abstract

A thorough examination of the stability of a 2D MoTe₂ thin film exposed to high-dose gamma radiation (γ) is addressed in this study. This study compares the film before and after irradiation (10–600 kGy dosage) to report the impact of γ radiation on the surface morphology, work function, tensile strain and charge redistribution in the MoTe₂ thin film. The radiation damage to the film is monitored by optical micrographs (OM) and with atomic force microscopy (AFM) and conceptualized by thermal strain in the film. Raman spectroscopy has been used to analyze the shifting and to address the strain that arises due to irradiation in its vibrational mode. Kelvin probe force microscopy (KPFM) has been performed to evaluate the work function of the film, which increases by 0.14 eV for the 600 kGy γ-irradiated sample, implying shifting of the Fermi-level to the valence band of the spectrum and thus it results in p-type doping in the film. Owing to the reduced atomic mass and high energy of tellurium atoms, γ-irradiation causes tellurium vacancies, which lead to the formation of dangling bonds at unoccupied sites. When oxygen is adsorbed at these reactive spots, a charge-transfer mechanism takes place. This mechanism involves the transfer of electrons from the thin MoTe₂ film to the adsorbed oxygen, forming oxides and causing p-type doping. Furthermore, p-doping is verified by the valence band shifting by 1.27 eV in 600 kGy in γ-irradiated samples in X-ray photoelectron spectroscopy. This comprehensive study shows how γ irradiation affects the chemical and physical characteristics of the MoTe₂ thin film. Consequently, it shows that if devices integrating MoTe₂ thin films are meant to be used in high-dose radiation conditions, the adsorbate concentrations, radiation shielding and required lifetimes must be carefully evaluated.