Issue 40, 2024

Spin dependent tunneling and strain sensitivity in a Co2MnSb/HfIrSb magnetic tunneling junction: a first-principles study

Abstract

Half-metallic Co-based full Heusler alloys have captured considerable attention of researchers in the realm of spintronic applications, owing to their remarkable characteristics such as exceptionally high spin polarization at the Fermi level, ultra-low Gilbert damping, and a high Curie temperature. In this comprehensive study, employing the density functional theory, we delve into the electronic stability and ballistic spin transport properties of a magnetic tunneling junction (MTJ) comprising a Co2MnSb/HfIrSb interface. An in-depth investigation of k-dependent spin transmissions uncovers the occurrence of coherent tunneling for the Mn–Mn/Ir interface, particularly when a spacer layer beyond a certain thickness is employed. It has been found that the Co-terminated Co2MnSb/HfIrSb interface shows perpendicular magnetic anisotropy, while those with Mn–Sb and Mn–Mn termination exhibit in-plane magnetic anisotropy. Furthermore, our spin-dependent transmission calculations demonstrate that the Mn–Mn/Ir interface manifests strain-sensitive transmission properties under both compressive and tensile strain and yields a remarkable three-fold increase in majority spin transmission under tensile strain conditions. We find a tunnel magnetoresistance of ∼500% under a bi-axial strain of −3%, beyond which the tunnel resistance is found to be theoretically infinite. These compelling outcomes place the Co2MnSb/HfIrSb junction among the highly promising candidates for nanoscale spintronic devices, emphasizing the potential significance of the system in the advancement of the field.

Graphical abstract: Spin dependent tunneling and strain sensitivity in a Co2MnSb/HfIrSb magnetic tunneling junction: a first-principles study

Supplementary files

Article information

Article type
Paper
Submitted
03 May 2024
Accepted
23 Sep 2024
First published
25 Sep 2024

Phys. Chem. Chem. Phys., 2024,26, 26064-26075

Spin dependent tunneling and strain sensitivity in a Co2MnSb/HfIrSb magnetic tunneling junction: a first-principles study

J. Bhattacharya, A. Rawat, R. Pati, A. Chakrabarti and R. Pandey, Phys. Chem. Chem. Phys., 2024, 26, 26064 DOI: 10.1039/D4CP01850H

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements