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Correction: How fast do defects migrate in halide perovskites: insights from on-the-fly machine-learned force fields

Mike Pols , Victor Brouwers , Sofía Calero and Shuxia Tao *
Materials Simulation & Modelling, Department of Applied Physics, Eindhoven University of Technology, Eindhoven 5600 MB, The Netherlands. E-mail: s.x.tao@tue.nl

Received 13th February 2024 , Accepted 13th February 2024

First published on 23rd February 2024


Abstract

Correction for ‘How fast do defects migrate in halide perovskites: insights from on-the-fly machine-learned force fields’ by Mike Pols et al., Chem. Commun., 2023, 59, 4660–4663, https://doi.org/10.1039/D3CC00953J.


The authors regret that there was an error in the units listed for the reported diffusion parameters shown in Table 1, header row, column 3 of the original article. D0 (×10−6 s) should read D0 (×10−6 cm2 s−1). The correct units are shown in the updated table below.
Table 1 Overview of the diffusion parameters D0 and Ea for halide vacancies (VX) and halide interstitials (IX) in CsPbI3 and CsPbBr3
Perovskite Defect D 0 (×10−6 cm2 s−1) E a (eV)
CsPbI3 VI 0.7 ± 0.5 0.34 ± 0.04
CsPbI3 II 2.2 ± 1.0 0.20 ± 0.02
CsPbBr3 VBr 0.1 ± 0.2 0.29 ± 0.06
CsPbBr3 IBr 2.0 ± 0.5 0.21 ± 0.01


The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.


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