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Correction: Electrical characteristics and photodetection mechanism of TiO2/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction
Teng
Zhan
ac,
Jianwen
Sun
b,
Tao
Feng
ac,
Yulong
Zhang
b,
Binru
Zhou
ac,
Banghong
Zhang
ac,
Junxi
Wang
ac,
Pasqualina M.
Sarro
d,
Guoqi
Zhang
d,
Zewen
Liu
*b,
Xiaoyan
Yi
*ac and
Jinmin
Li
*ac
aResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road 35A, 100083, Beijing, China. E-mail: spring@semi.ac.cn; jmli@semi.ac.cn
bSchool of Integrated Circuits, Tsinghua University, 100084, Beijing, China. E-mail: liuzw@tsinghua.edu.cn
cCollege of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
dDepartment of Microelectronics, Delft University of Technology, 2628 CD Delft, The Netherlands
First published on 27th February 2023
Abstract
Correction for ‘Electrical characteristics and photodetection mechanism of TiO2/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction’ by Teng Zhan et al., J. Mater. Chem. C, 2023, 11, 1704–1713, https://doi.org/10.1039/D2TC04491A.
The authors regret an error in the abstract of the published article: the text “(i) the Schottky emission mechanism at a low reverse voltage (0–1 V) before the current is fully turned on.” should be changed to “(i) the Schottky emission mechanism at a low reverse voltage (0 to −1 V) before the current is fully turned on.” This change does not affect the main conclusions of the manuscript. The authors would like to apologize for any inconvenience caused.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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