Jie
Yan‡
a,
Yixin
Wu‡
a,
I-Che
Peng‡
b,
Yi
Pan‡
a,
Shek-Man
Yiu
a,
Ken-Tsung
Wong
c,
Wen-Yi
Hung
*b,
Yun
Chi
*a and
Kai-Chung
Lau
*a
aDepartment of Materials Sciences and Engineering, Department of Chemistry, and Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong. E-mail: yunchi@cityu.edu.hk; kaichung@cityu.edu.hk
bDepartment of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung 20224, Taiwan. E-mail: wenhung@mail.ntou.edu.tw
cDepartment of Chemistry, National Taiwan University, Taipei 10617, Taiwan
First published on 8th August 2023
Ir(III) based carbene complexes are highly sought after in the field of organic light-emitting diodes (OLEDs), as they are expected to solve the thorny issue of efficient and durable blue phosphors. Hence, three tris-bidentate Ir(III) based carbene complexes, namely, f-ct4a–c, were synthesized and fully characterized by both spectroscopic and structural methods, presenting a bulky 2,6-dimethylphenyl substituent on the imidazo[4,5-b]pyrazin-2-ylidene fragment, and a distinctive N-aryl (i.e., either phenyl or 4-t-butylphenyl) appendage and cyclometalating group. These complexes exhibited sky-blue emission with a peak max. located between 473 and 482 nm and a photoluminescent quantum yield (PLQY) of 50–68% recorded in degassed toluene, and furthermore, a much-improved PLQY of 71–87% upon doping in the 2,8-bis(diphenylphosphoryl)dibenzo[b,d]thiophene (PPT) host matrix. Remarkably, the f-ct4b based OLED device and respective hyper-OLED device exhibited blue Commission Internationale de L’Eclairage CIEx,y coordinates of (0.19,0.47) and (0.11,0.44), and max. external quantum efficiencies (EQEs) of 17.4% and 21.5%, respectively, demonstrating their potential in future OLED applications.
Next, tuning their emission to standard RGB colour is also of particular importance for OLED applications. Many Ir(III) complexes have already shown red and green electroluminescence with satisfactory long term stability, but not for the blue ones.4 This is attributed to their high excitation energy for blue emission that could severely limit its emission efficiency and stability. Specifically, in contrast to the typical red and green phosphors with relatively short radiative lifetime of ∼1 μs and below, the inherent long radiative lifetime of blue phosphors, i.e., ≫1 μs, which is a result of the diminished metal-to-ligand charge transfer (MLCT) contribution in the excited state manifolds and reduced spin–orbit coupling, has caused significant efficiency roll-off, exciton–exciton and exciton–polaron annihilation for devices at a higher driving current density.5 Furthermore, it is well understood that the parasitic annihilation processes between excited states could lead to the hot excited states with energy well above the ground-state, i.e., ≥6 eV, causing unavoidable chemical deterioration for the blue phosphors upon excitation.6 Therefore, efficient blue phosphors with both greater long term stability and shortened radiative lifetime are urgently needed for better device efficiency wanted in future commercial applications.7
There are many intrinsic factors that could affect the fundamentals of blue phosphors.8 However, homoleptic Ir(III) carbene complexes were known to be the best possible candidates due to their highly destabilized metal centred (MC) dd excited states,9 which is attributed to their six Ir–C bonding vectors; i.e., the strongest metal–chelate bonding known to all transition-metal complexes. Ultimately, this molecular design improved their intrinsic stability and emission efficiency at the same time. These properties are far superior to those of their predecessor, namely: FIrpic, in which its intrinsic instability and dominant ππ* transition character in the excited state have seriously hampered the overall performances and long-term durability of the fabricated OLED devices.10 Moreover, the notably destabilized lowest unoccupied molecular orbital (LUMO) of the Ir(III) carbene complexes afforded high energy emission in the near UV region, as shown in m.f-Ir(pmi)311 and m.f-Ir(pmb)3.12 Subsequently, shifting emission to the true-blue region has been achieved by insertion of skeletal N atoms adjacent to the carbene entities as shown in m-Ir(tbpbp)3 and analogues,13f-Ir(pmp)3,14f-Ir(pmpz)3,15f-1tBu and f-2tBu,16D and derivatives,17f-Ir(tpz)3,15Ir3 and Ir4,18 and f-Ir(cb)3.19 Selective drawings are depicted in Scheme 1, among which many imidazo[4,5-b]pyrazin-2-ylidene based derivatives have already been utilized in the fabrication of efficient and relatively durable blue emissive OLED devices, particularly those with functional N-aryl appendages such as f-Ir(cb)3 and analogues.
![]() | ||
Scheme 1 Representative drawings of near UV and blue emissive Ir(III) complexes reported in the literature. |
Herein, our approach is to modify the existing blue emissive Ir(III) carbene complexes with adequate performances, i.e., homoleptic complexes such as f-Ir(cb)3 and analogues,19 as well as a similar set of Ir(III) complexes bearing t-butyl substituted imidazo[4,5-b]pyrazin-2-ylidene chelates, i.e., f-ct1a–d,20 and tuned their physical and photophysical properties to suit the possible requirements demanded by the PhOLED devices of the future. We have selected the 2,6-dimethylphenyl fragment as the designated functional group in replacement for the t-butyl substituent on the carbene fragments, as the imposed steric encumbrance of similar substituents is expected to suppress the dopant-host interaction and further boost the OLED device efficiency as shown in the literature.21 Moreover, the same steric encumbrance prevented electronic delocalization between the 2,6-dimethylphenyl group and carbene core structure; thereby, it offered a slightly reduced bandgap demanded for genuine blue emission. As depicted in this article, the studied phosphors revealed excellent performance with EQE > 20% and relatively suppressed efficiency roll-off, confirming the usefulness of this synthetic approach and investigation.
Next, we employed this pro-chelate, iridium reagent [IrCl3(tht)3] and sodium acetate as the catalyst to prepare the required Ir(III) based carbene complexes.28 Accordingly, heating of the trios in refluxing o-dichlorobenzene (bp = 180 °C) afforded a mixture of three fac- isomers, namely: a yellow f-ct4a, a yellow f-ct4b, and a light-yellow f-ct4c in an approx. ratio of 1:
5
:
3, respectively. Analogous reactions conducted in refluxing 1,2,4-trichlorobenzene (bp = 213 °C) afforded the same mixture of f-ct4a, f-ct4b and f-ct4c, but in a slightly different ratio of 1
:
10
:
5. A schematic drawing of these Ir(III) based carbene complexes is depicted in Scheme 3. In addition, heating purified samples of f-ct4b and f-ct4c in the presence of both p-toluenesulfonic acid and sodium acetate at 213 °C for 48 hours also afforded a similar distribution of isomeric products, with no obvious decomposition. This result is greatly different from the control experiments with heating in the presence of either no sodium acetate catalyst or, alternatively, sodium acetate but without the added sulfonic acid, both of which afforded no isomerization after prolonged heating in refluxing 1,2,4-trichlorobenzene. Hence, the detected isomerization could be initiated by protonation of the unique cyclometalating aryl group, forming a mono-dentate carbene entity with two free aryl pendants, followed by reversible generation of respective Ir–C bonding at one of the aryl pendants during heating.29 A recent report on homoleptic Ir(III) complexes bearing metalated N-heterocyclic carbenes may also provide clues to the possible intermediates and pathway of isomerization processes.30
![]() | ||
Fig. 4 UV-Vis absorption and photoluminescence spectra of all studied tris-bidentate Ir(III) complexes in toluene at RT. |
The vertical excitation energies of the S0 → S1 transition were calculated to be 423, 428 and 428 nm for f-ct4a, f-ct4b and f-ct4c, respectively (Table 2), which are correlated with their experimental lowest-energy absorption tails around 400 nm (Fig. 4). The respective excitation energies for the S0 → T1 transition, which is usually used to represent the T1 → S0 emission at the equilibrium structure of S0, were 459, 457 and 459 nm for f-ct4a, f-ct4b and f-ct4c, respectively (Table 2), corresponding well to the experimental phosphorescence (PLλmax at 482, 478 and 473 nm; see Fig. 4 and Table 1). The MAD (mean absolute deviation) between the calculated vertical energies of the S0 → T1 transition and the experimental emission wavelengths is about 0.11 eV (2.5 kcal mol−1). Moreover, the calculated adiabatic emission energy (468, 464 and 469 nm, Table 3) is far better than the vertical values, and the MAD is as small as 0.06 eV (or 1.4 kcal mol−1).
abs λmaxa (nm) | em λmax (nm) | FWHMb (nm) | PLQY (%)c | τ obs (ns) | τ rad (ns) | k r (105 s−1)e | k nr (105 s−1)e | |
---|---|---|---|---|---|---|---|---|
a Those were recorded at a conc. of 10−5 M in toluene at RT; extinction coefficient (ε) is given in parentheses with a unit of 104 M−1 cm−1. b Full width at half maximum. c Coumarin 102 (C102) in methanol (PLQY = 87% and λmax = 480 nm) was employed as the standard. d Observed lifetimes were obtained from transient PL measurement. e τ rad = τobs/PLQY, kr = PLQY/τobs and knr = (1 – PLQY)/τobs. | ||||||||
f-ct4a | 312 (3.8), 360 (3.6), 399 (3.2) | 482 | 65 | 50 | 754 | 1508 | 6.6 | 6.6 |
f-ct4b | 354 (3.1), 400 (2.6) | 478 | 65 | 66 | 1270 | 1924 | 5.2 | 2.7 |
f-ct4c | 320 (3.1), 346 (3.3), 401 (2.6) | 473 | 63 | 68 | 1913 | 2813 | 3.5 | 1.7 |
Furthermore, natural transition orbital (NTOs)33 analyses were executed to express the S0 → T1 transition as a single pair of orbitals. The predominant NTO pairs found for the S0 → T1 transition are presented in Fig. 5. As can be seen, the occupied NTOs are delocalized over both the Ir(III) atom and carbene cyclometalates (in π orbitals); while the virtual NTOs are mainly localized over the carbene coordinative fragments (in π* orbitals). Although the NTO analysis is based on the dominant molecular orbital pairs, the contribution of the NTO pairs may not reveal the full properties of S0 → T1 excitation. For example, the calculated eigenvalues for S0 → T1 NTOs of f-ct4a is 0.747 (Fig. 5), implying that 74.7% of S0 → T1 excitation is contributed by the “HOMO → LUMO” transition. There is no obvious difference in the results obtained from NTO analysis from those (70.8%) obtained in the original TD-DFT calculation (Table 2).
E HOMO (eV) | H–L gapa (eV) | Excitation | λ [nm eV−1] | f | MO contribution (>20%)b | Assignmentc | Sum contributiond (%) | |||||
---|---|---|---|---|---|---|---|---|---|---|---|---|
MLCT (%) | ILCT (%) | LC (%) | LMCT (%) | MC (%) | ||||||||
a The EHOMO and H–L gap are computed at optimized S0 structures at the B3LYP-D3(BJ)/def2-SVP level with the polarizable continuum model (PCM) for modelling the toluene solvent. b The results were calculated by TD-DFT using the B3LYP functional with PCM for toluene (cf., the ESI). c The percentage of all characters of S0 → T1 excitation was calculated using the IFCT (Hirshfeld) method. d The sum contribution is: MLCT + ILCT + LC − LMCT. | ||||||||||||
f-ct4a | −5.41 | 3.48 | S0 → T1 | 459/2.70 | 0 | HOMO → LUMO (70.8%) | 25.8 | 47.2 | 23.4 | 1.0 | 2.9 | 95.4 |
S0 → S1 | 423/2.93 | 0.0782 | HOMO → LUMO (89.4%) | |||||||||
f-ct4b | −5.45 | 3.48 | S0 → T1 | 457/2.71 | 0 | HOMO → LUMO (72.4%) | 27.2 | 32.7 | 35.9 | 1.2 | 2.9 | 94.6 |
S0 → S1 | 428/2.90 | 0.0449 | HOMO → LUMO (89.4%) | |||||||||
f-ct4c | −5.43 | 3.50 | S0 → T1 | 459/2.70 | 0 | HOMO → LUMO (76.2%) | 27.2 | 22.7 | 45.4 | 1.4 | 3.4 | 93.9 |
S0 → S1 | 428/2.90 | 0.0780 | HOMO → LUMO (81.1%) |
The inter-fragment charge transfer (IFCT) method, which is available from the Multiwfn software package,34 was also employed to quantify the contributions of relevant molecular orbitals (MOs) to the selected electronic transition. This manipulation is aimed to provide a better picture of the S0 → T1 excitation process, and the percentage of MLCT, ILCT, ligand-centered (LC), ligand-to-metal charge transfer (LMCT) and metal-centered (MC) contributions is depicted in Table 2. The variation of krvs. ligand rearrangement may be understood as: reducing the number of p-t-butylphenyl cyclometalate units attached to the metal centre (Ir) would slightly increase the MLCT characters from 25.8% (f-ct4a) to 27.2% (f-ct4b) and to 27.2% (f-ct4c), but greatly reduce the ILCT characters from 47.2% to 32.7% and to 22.7%, respectively. The higher percentage (47.2%) and effective ILCT contribution may be correlated with the 3-fold symmetry of the p-t-butylphenyl cyclometalate ligands in f-ct4a. With the increment in the LC characters (23.4% to 35.9% and to 45.4%, from f-ct4a to f-ct4b and f-ct4c), the IFCT method clearly suggests that the S0 → T1 excitation of all Ir(III) complexes involved mixed MLCT, ILCT and LC transitions. The combined contribution (Table 2) of “MLCT + ILCT + LC–LMCT” of 95.4%, 94.6% and 93.9% for f-ct4a, f-ct4b and f-ct4c correlates well with the measured kr values (in μs−1, Table 1) of 0.66 (f-ct4a), 0.52 (f-ct4b) and 0.35 (f-ct4c) obtained from solution.
Following the IFCT prediction, we performed theoretical calculations of the emission radiative lifetime (τrad) and rate (kr). If the phosphorescence is considered as a long-lived process, the triplet manifold of the studied complexes is expected to have sufficient time to relax into a lower-energy geometry. Thus, the emission energy calculated at the optimized structure (T1) should provide physical insight into the emission properties of Ir(III) complexes. However, it has been pointed out that, although some literature precedents using the optimized structure (T1) can give good prediction to the experimental τrad, other works of τrad using the ground state geometry (S0) also give a better correlation to the experimental data.35 As the “actual” emitting structure is an intermediate between the ground state (S0) and excited state (T1),36 we here apply the spin–orbit coupling (SOC)-TDDFT method to predict τrad and kr using both the optimized S0 and T1 geometries.
Table 3 depicts the calculated emission energies, together with τrad and kr using both the optimized S0 and T1 geometries. For all these complexes, calculations based on both the arithmetic average and Boltzmann average of the SOC substates gave similar results. Thus, only the arithmetic averages are discussed here. For the T1 → S0 emission of f-ct4a, the τrad is predicted to be 0.99 μs (at the S0 geometry) and 2.66 μs (at the T1 geometry). The deviations from experimental τrad (1.508 μs, Table 1) to the τrad obtained at the S0 and T1 geometries are recorded to be +0.51 and −1.15 μs, respectively. It appears that the true emitting intermediate of f-ct4a is closer to the S0. For the f-ct4b, the experimental τrad (1.924 μs) is closer to the calculated value of 1.84 μs (at the T1 geometry) than the value of 0.81 μs (at the S0 geometry), hinting that the true emitting intermediate of f-ct4b lies in the vicinity to the T1 geometry. For the f-ct4c, as there is no obvious difference between the calculated values of 2.79 μs (at the S0 geometry) and 3.25 μs (at the T1 geometry) and the experimental τrad data (2.813 μs), thus the emitting intermediate of f-ct4c is predicted to resemble both the S0 and T1 geometries. It is worth noting here, the uncertainty (∼1.7 μs) of τrad for other Ir(III) complexes predicted with the SOC-TDDFT method is relatively large.37 From the above analysis, it is suggested that the phosphorescence process of f-ct4a with a relatively short τrad happened near the S0 structure, while f-ct4b and f-ct4c with much longer lifetimes may emit near the T1 structure.
Emission (T1 → S0) | λ [nm eV−1] | λ [nm eV−1] | τ rad (μs) | k r (μs−1) |
---|---|---|---|---|
a The adiabatic emission energy obtained from the difference between the optimized structures of T1 and S0 states using the B3LYP functional with the polarizable continuum model (PCM) in toluene for modelling (cf., the ESI). b The vertical emission energy between T1 and S0 states using the SOC-TDDFT method in ORCA at optimized structures of S0 (in normal font) and T1 (in italic and bold font in parentheses). c The τrad and kr are calculated by the arithmetic average/Boltzmann average (at 298 K) of the three SOC substates of T1, at optimized structures of S0 (in normal font) and T1 (in italic and bold font in parentheses). | ||||
f-ct4a | 468/2.65 | 466/2.66 (540/2.29) | 0.99/1.01 (2.66/2.96) | 1.02/0.99 (0.38/0.34) |
f-ct4b | 464/2.67 | 464/2.67 (562/2.21) | 0.81/0.92 (1.84/2.10) | 1.23/1.09 (0.54/0.48) |
f-ct4c | 469/2.64 | 465/2.66 (556/2.23) | 2.79/3.24 (3.25/3.57) | 0.36/0.31 (0.31/0.28) |
The performance characteristics of these OLED devices are presented in Fig. 6 and Table 4. Notably, the f-ct4b-based device exhibited the most favorable performance among all examined OLED devices, achieving a luminance (L) of 25982 cd m−2 at 18 V (182 mA cm−2), with a peak emission at 498 nm and CIE coordinates of (0.19, 0.47). Additionally, this device demonstrated a maximum external quantum efficiency (EQEmax), current efficiency (CEmax), and power efficiency (PEmax) of 17.4%, 45.0 cd A−1, and 21.9 lm W−1, respectively. In comparison, devices containing 20 wt% of f-ct4a and f-ct4c in PPT displayed lower maximum efficiencies (EQEmax of 14.7% and 14.1%, respectively). The host-dopant energy transfer was further investigated through steady-state and transient photoluminescence (PL) measurements of PPT films doped with 20 wt% of f-ct4a, f-ct4b, and f-ct4c (Fig. S4, ESI†). Moreover, the device performances seem to follow the trend of both the emission lifetimes (τ) and PLQY (ΦPL) of emitters dispersed in the host material, i.e. the higher the device performances, the higher the PLQY and the shorter the observed lifetime τ. The PLQY values of 76%, 81% and 71% as well as the exponential lifetimes τ of 2.20 μs, 2.02 μs and 2.97 μs were recorded for the associated doped thin films, respectively, which is consistent with the overall performances of PhOLED devices.
DtBuCzB [wt%] | V on [V] | L/J at 18 Vb [cd m−2/mA cm−2] | EQE/CE/PE at max. [%/cd A−1/lm W−1] | EQE/CE/PE at 103 cd m−2 [%/cd A−1/lm W−1/V] | λ max [nm] | FWHM [nm] | CIE [x,y] | |
---|---|---|---|---|---|---|---|---|
a Turn-on voltage at 0.1 cd m−2. b Luminance with the driving current density recorded at 18 V. c λEL: EL emission peak maximum. | ||||||||
f-ct4a | 0 | 5.9 | 20![]() |
14.7/35.6/15.4 | 9.0/21.6/5.5/12.3 | 490 | 66 | 0.18,0.44 |
1 | 5.6 | 22![]() |
15.3/30.5/14/3 | 8.5/16.9/4.4/12.2 | 489 | 32 | 0.12,0.41 | |
2 | 5.6 | 20![]() |
15.0/29.9/13.2 | 9.2/18.4/4.7/12.2 | 489 | 31 | 0.11,0.42 | |
f-ct4b | 0 | 5.0 | 25![]() |
17.4/45.0/21.9 | 13.1/33.9/9.43/11.3 | 498 | 71 | 0.19,0.47 |
1 | 5.0 | 30![]() |
21.5/45.1/23.7 | 14.7/30.8/8.73/11.1 | 490 | 31 | 0.11,0.44 | |
2 | 5.0 | 30![]() |
20.8/43.4/22.4 | 14.2/29.8/8.51/11.0 | 490 | 31 | 0.11,0.44 | |
f-ct4c | 0 | 5.7 | 15![]() |
14.1/34.0/14.6 | 8.7/21.0/5.2/12.7 | 489 | 69 | 0.17,0.43 |
1 | 5.3 | 28![]() |
17.5/33.7/15.8 | 11.3/21.8/5.8/11.9 | 489 | 30 | 0.11,0.40 | |
2 | 5.3 | 22![]() |
17.0/34.6/16.0 | 10.6/21.7/5.6/12.2 | 490 | 30 | 0.11,0.44 |
Furthermore, Förster Resonance Energy Transfer (FRET) was known to be one practical method in enhancing the performances of phosphorescent OLED devices.39 Encouraged by the recent successes in the fabrication of highly efficient hyper-OLED devices,40 we employed these newly developed Ir(III) based carbene emitters as phosphorescent sensitizers to further explore their potential for such application. As expected, adequate device efficiencies were expected if there existed fast FRET from sensitizers to the terminal emitters. Particularly, MR-TADF terminal emitters are the preferred choice for giving narrowband blue emission.41 With this in mind, we examined hyper-OLEDs by incorporating f-ct4a, f-ct4b, and f-ct4c as sensitizers along with 1–2 wt% of DtBuCzB42 as a blue terminal emitter (Fig. 6 and Table 4). When 1 wt% of DtBuCzB was doped into the device with f-ct4b as the sensitizer, its performance improved significantly, resulting in the best EQEmax of 21.5%, CEmax of 45.1 cd A−1 and PEmax of 23.7 lm W−1, accompanied by a narrowband electroluminescence (EL) profile (CIE = 0.11, 0.44), which is identical to the typical emission profile exhibited by DtBuCzB. However, when the doping concentration was increased to 2 wt%, the EQEmax was found to slightly decrease to 20.8%, which could be attributed to the unwanted Dexter energy transfer and concentration quenching. In contrast, the other hyper-OLED devices utilizing f-ct4a and f-ct4c as sensitizers, in combination with 1 wt% DtBuCzB, exhibited lower EQEmax of 15.3% and 17.5%, respectively.
Hence, our current findings underscore the crucial role of Ir(III) carbene phosphors in controlling the performance of both phosphorescent OLED and hyper-OLED devices. This is particularly important as all studied Ir(III) emitters possess identical core structures, except for the relative disposition of peripheral substituents on surrounding chelates. The optimization of device configurations and the selection of appropriate sensitizer-dopant combinations are pivotal in achieving high-efficiency OLEDs with desirable emission properties. These insights contribute to the ongoing efforts in advancing OLED technology and pave the way for the development of future display and lighting applications.
Additionally, among three OLED devices bearing distinctive phosphors, f-ct4b based Ph OLED devices exhibited CIEx,y coordinates of 0.19,0.47, an EQEmax of 17.4% and a high luminance of 25982 cd m−2 at 18 V. It served as the champion of these emitters. Moreover, the corresponding hyper-OLED device with f-ct4b as the sensitizer and DtBuCzB as the terminal emitter exhibited narrowband blue emission with CIEx,y coordinates of 0.11,0.44, an EQEmax up to 21.5%, and an impressive luminance of 30
674 cd m−2 at 18 V. These results showed the high capability of bulky peripheral substituents around carbene cyclometalates (both t-butyl and 2,6-dimethylphenyl) in the improvement of the final characteristics of OLED devices, which sheds light on the future designs of efficient blue phosphors and respective OLED devices.
Footnotes |
† Electronic supplementary information (ESI) available: General synthetic procedures of chelates and Ir(III) complexes, structural data for single crystal X-ray diffraction study, original electrochemical data, detailed results of TD-DFT and OLED investigations, and performance characteristics of OLED devices, and original 1H NMR spectra of the studied Ir(III) emitters. CCDC 2247086, 2247203 and 2247210. For ESI and crystallographic data in CIF or other electronic format see DOI: https://doi.org/10.1039/d3tc02398b |
‡ J. Y., Y. W., I. P. and Y. P. contributed equally to this work. |
This journal is © The Royal Society of Chemistry 2023 |