Open Access Article
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Correction: Low-energy interlayer phonon assisted carrier recombination in Z-scheme van der Waals heterostructures for photocatalysis
Hejin
Yan
,
Qiye
Guan
,
Hongfei
Chen
,
Xiangyue
Cui
,
Zheng
Shu
,
Dan
Liang
,
Bowen
Wang
and
Yongqing
Cai
*
Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China. E-mail: yongqingcai@um.edu.mo
First published on 26th July 2023
Abstract
Correction for ‘Low-energy interlayer phonon assisted carrier recombination in Z-scheme van der Waals heterostructures for photocatalysis’ by Hejin Yan et al., J. Mater. Chem. A, 2022, 10, 23744–23750, https://doi.org/10.1039/D2TA04935J.
The authors regret that there was an error repeated throughout the published manuscript. Throughout the article, including in the article’s title and contents page description, the word “intralayer” mistakenly appeared instead of the correct word “interlayer”. There are three exceptions to this:
“[…] the CBMMoSe2 to VBMWSi2N4 path will compete with a direct intralayer hopping from CBMMoSe2 to VBMMoSe2.” (lines 14–16, column 1, p. 23747).
“[…] besides direct intralayer charge recombination (from CBMTMD to VBMTMD).” (lines 27 and 28, column 1, p. 23747).
“[…] while the contribution from the intralayer recombination is found to be negligible.” (line 30, column 1 to line 1, column 2, p. 23748).
In these three exceptions, “intralayer” appears correctly within the original published article. Everywhere else “intralayer” should be replaced by “interlayer”.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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