Qing
Shen‡
a,
Chengliang
He‡
a,
Shuixing
Li
*a,
Lijian
Zuo
ab,
Minmin
Shi
a and
Hongzheng
Chen
*a
aState Key Laboratory of Silicon Materials, MOE Key Laboratory of Macromolecular Synthesis and Functionalization, International Research Center for X Polymers, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China. E-mail: lishuixing89@163.com; hzchen@zju.edu.cn
bZhejiang University-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 310014, P. R. China
First published on 17th January 2023
Developing non-fused-ring electron acceptors (NFREAs) is a promising strategy toward high-efficiency and low-cost organic solar cells (OSCs), for which an in-depth understanding of the donor:acceptor (D:A) pairing principles is essential. Herein, we designed and synthesized a tetra-thiophene-cored NFREA with outward branched alkyl chains, BO-4T, and performed a systematic study by mapping four polymer donors, namely D18, PM6, PBDB-T, and J52, with BO-4T to investigate the carrier dynamics and molecular packing. It was unveiled that the narrowed energetic offset and broadened absorption coverage of the D:A blends were favorable for maximizing the voltage and photocurrent of OSCs, respectively, and the suitable phase separation induced by the miscibility between the D:A couple was critical for achieving high crystallinity and good charge-transport properties. Finally, with lower energy loss and less charge recombination, PM6 worked the best with BO-4T, demonstrating a high efficiency of 14.33%, which is among the best for OSCs based on NFREAs. Therefore, this work provides valuable guidelines for selecting polymer donors to match NFREAs.
Early in 2018, our group proposed an approach involving utilizing noncovalent intramolecular interactions, e.g., F⋯H interactions, for replacing the fused structure to design NFREAs, yielding DF-PCIC with an efficiency over 10% and high thermal stability.24 Such a design also reduced the synthetic steps, thus lowering the material costs. Later, a more simplified NFREA, ICTP consisting of only one benzene ring and two thiophene rings as the molecular backbone and O⋯H intramolecular interaction, was also designed by our group. Further modifications of an outward linear alkyl chain on the thiophene ring and fluorination on the terminals led to a PCE of over 10% in such a completely non-fused structure.25,26 Bo et al. also reported tetra-thiophene rings as a feasible choice for constructing NFREAs and an efficiency over 12% could be achieved by altering the substituted alkyl chains on the four thiophene rings.27 Very recently, based on a tetra-thiophene ring backbone, Hou et al. introduced rigid 2,4,6-triisopropylphenyl as the substituent for the central bi-thiophene rings, yielding A4T-16. Such an arrangement enabled a 3D-interpenetrated crystalline structure, leading to a high PCE of 15.2% with an outstanding fill factor (FF) of 0.798.28 Continuous efforts have investigated NFREAs for higher efficiencies, but mainly focus on how the molecular structures of NFREAs affect the device performance.18,29–36 Less attention has been devoted to the polymer donors mapping with a NFREA, which is critical, since the crystallization dynamics in the BHJ photoactive layer are controlled by the both donor and acceptor.4,37 An understanding of how varied polymer donors regulate the crystalline packing of the photoactive layer with a NFREA is essential to guide the future design of highly efficient OSCs based on low-cost NFREAs.
Under the above backgrounds, we here performed a study on mapping the polymer donors with a NFREA. First, based on the tetra-thiophene ring backbone, we designed and synthesized a NFREA with high steric 2,4,6-triisopropylphenyl as the substituents on the central bi-thiophene rings and outward branched alkyl chains, 2-butyloctyl (2-BO), as the substituents on another two thiophene rings, yielding BO-4T (Fig. 1). The crystalline packing structure study of BO-4T via single-crystal analysis revealed condensed π–π stacking and a predominant face-on molecular orientation, beneficial for superior charge transport in the acceptor domains. Then, four wide bandgap polymer donors of D18, PM6, PBDB-T, and J52 were selected to pair with BO-4T for a systematical study on D–A matching in NFREA-based OSCs (see Fig. 1a for the chemical structures). The effects of the polymer donors' energetics, absorption, and aggregation properties on the carrier dynamics and crystallization behaviors, and thus the whole device performances were investigated. With more benefits in voltage and FF, the D–A combination of PM6:BO-4T demonstrated the highest PCE of 14.33%, representing one of the highest efficiencies for NFREA-based OSCs. When evaluating the cost and performance of the materials, BO-4T possessed a prominent figure-of-merit (FOM) value of 23.25 among several representative acceptors, indicating its advantage in terms of low material costs.
Density functional theory (DFT) theoretical calculations were performed at the B3LYP/6-31 G(d,p) level for obtaining the optimal geometry, and showed a planar conformation for BO-4T (Fig. S8†), favoring the packing of adjacent molecules. To verify the effects of 2,4,6-triisopropylphenyl and 2-BO substituents on the geometry, the internal rotation barrier between two adjacent structural units was calculated (Fig. 1c and d). TP-BO was the molecular fragment composed of the thiophene unit in the core and π-bridge, and BO-IC was composed of a π-bridge and terminal. It was found that the trans conformation of two thiophene rings was the more stable state than the cis conformation for TP-BO. As for BO-IC, the outward branched alkyl chains induced strong steric hindrance effects, making the conformation with the formation of O⋯S noncovalent interaction the stable state and inducing an especially large rotation barrier (∼45.0 kJ mol−1) from the stable state to the meta-stable state (Es→ms). Besides, 2,4,6-triisopropylphenyl and 2-BO substituents helped endow BO-4T with a planar geometry, which was beneficial for intramolecular charge transfer and intermolecular charge transport. In addition, the electrostatic potential (ESP) distribution of BO-4T was also calculated and is depicted in Fig. 1e. The positive ESP distributions suggested its good electron-accepting capacity.38
Fig. 2 (a) UV-vis absorption spectra of BO-4T in CHCl3 solution and thin film. (b) GIWAXS scattering intensity profiles along the in-plane and out-of-plane directions of BO-4T film. (c) 2D GIWAXS image of the pristine BO-4T film. (d) Single-crystal structure of BO-4T (CCDC: 2223269). (e) Crystal-packing structure of BO-4T. (f–h) Multi-molecular configurations extracted from the single-crystal structure. |
The single crystal of BO-4T was obtained via the liquid diffusion method in order to gain an in-depth understanding of the molecular geometry and intermolecular stacking. The molecular configuration is shown in Fig. 2d. The two thiophenes in the core were in the same plane with a dihedral angle close to 0°. While the dihedral angle between the core and the attached thiophene π-bridge was 7.58°, and the dihedral angle between the π-bridge and terminal was 3.18°. The distance between the sulfur atom in the π-bridge and the oxygen atom in the end group was 2.66 Å, smaller than the sum of the S and O van der Waals radii (3.32 Å), indicating the formation of O⋯S interaction. Meanwhile, the rigid group in the core was almost perpendicular to the thiophene ring, which was able to inhibit over-sized intermolecular aggregation. Both the conformation in the single crystal and the geometry obtained via the DFT calculations mentioned above verified the good planarity of BO-4T. Furthermore, it can be seen from Fig. 2e that effective π–π stacking was formed between the end groups, and the π–π stacking distances between the end groups were 3.37 and 3.34 Å, agreeing well with the GIWAXS results. The small π–π stacking distances may be ascribed to the good molecular planarity. The value of lamellar packing distance calculated from the GIWAXS scattering profile could also be found in the single-crystal diffraction analysis (Fig. 2f), which revealed that the crystalline nature of BO-4T could be maintained in the spin-coated film to some extent.11,44 As shown in Fig. 2g and h, the intermolecular stacking of BO-4T was highly regular with effective J-aggregation, which was consistent with the J-aggregation observed in film absorption, which is conducive to the formation of effective intermolecular charge-transfer channels.39 The above results indicate that through rational structure design, the obtained BO-4T had a defined molecular conformation and favorable stacking behaviors with a face-on molecular orientation in the thin film, which provides a good case for rationally designing NFREAs.
Active layer | V OC (V) | J SC (mA cm−2) | J cal (mA cm−2) | FF | PCEb (%) | E loss (eV) |
---|---|---|---|---|---|---|
a Integrated current densities from EQE curves. b Average PCEs from 20 devices. c Energy loss was calculated via the equation of Eloss = Eg − qVOC. | ||||||
D18:BO-4T | 0.964 (0.958 ± 0.007) | 19.97 (20.14 ± 0.36) | 19.56 | 0.58 (0.56 ± 0.01) | 11.24 (10.83 ± 0.23) | 0.524 |
PM6:BO-4T | 0.897 (0.896 ± 0.002) | 22.94 (22.79 ± 0.13) | 22.37 | 0.70 (0.69 ± 0.00) | 14.33 (14.09 ± 0.12) | 0.596 |
PBDB-T:BO-4T | 0.820 (0.821 ± 0.004) | 22.62 (22.46 ± 0.30) | 22.12 | 0.58 (0.56 ± 0.01) | 10.80 (10.29 ± 0.28) | 0.678 |
J52:BO-4T | 0.741 (0.745 ± 0.003) | 23.11 (23.02 ± 0.35) | 22.60 | 0.68 (0.67 ± 0.01) | 11.63 (11.47 ± 0.16) | 0.756 |
For the short-circuit current density (JSC), except for the D18:BO-4T system, all the other three systems demonstrated high JSC values of ∼23 mA cm−2, illustrating that lowering the driving force was not the main barrier to achieving efficient charge separation in the non-fullerene systems. However, the D18:BO-4T system exhibited a significantly lower JSC of 19.97 mA cm−2 despite it having the lowest energy loss, which was related with an unfavorable blend morphology and severe charge recombination, as discussed below. The highest JSC of the J52:BO-4T system benefited from a broader absorption coverage in the short-wavelength range (Fig. 3e), which was consistent with the absorption spectrum of the blend films (Fig. S11†).
As for the FF, it varied largely. The highest FF of 0.70 was achieved for the PM6:BO-4T-based device, and the second highest FF of 0.68 was achieved for J52:BO-4T-based device. For comparison, a worse FF of 0.58 was presented in both D18:BO-4T-based and PBDB-T:BO-4T-based devices. These observations implied there may exist significant differences in the blend morphology or crystalline behaviors among these four systems.41,48
Combining all the above, the PM6:BO-4T system performed well in terms of all three device parameters, thus resulting in the best PCE of 14.33%, while the other three systems showed worse performances, with PCEs varying between 10.80–11.63%, due to shortcomings either in the voltage or fill factor.
Next, external quantum efficiency (EQE) tests were carried out to cross-check the photocurrent generation, and the results are shown in Fig. 3e and Table 1. Except for the D18:BO-4T-based device, the other three devices exhibited an over 80% photon-to-electron response from 500 to 800 nm. The integrated Jcal values from the EQE curves were 19.56, 22.37, 22.12, and 22.60 mA cm−2 for OSCs based on D18:BO-4T, PM6:BO-4T, PBDB-T:BO-4T, and J52:BO-4T, respectively, in accordance with those derived from their J–V curves.
In order to investigate the charge-transport properties of the blend films, space-charge-limited current (SCLC) tests were conducted in hole-only devices (ITO/PEDOT:PSS/active layer/MoO3/Ag) and electron-only devices (ITO/ZnO/active layer/PDINN/Ag) to measure the hole and electron mobilities (Fig. S12†). The PM6:BO-4T blend possessed the highest electron mobility (μe) of 9.40 × 10−4 cm2 V−1 s−1 and the highest hole mobility (μh) of 8.65 × 10−4 cm2 V−1 s−1, giving the most balanced μe/μh ratio of 1.09. The J52:BO-4T blend was the next best, with a μe of 7.49 × 10−4 cm2 V−1 s−1 and a μh of 4.33 × 10−4 cm2 V−1 s−1, giving a μe/μh ratio of 1.73. The high carrier mobility and balanced μe/μh ratio contributed to the excellent JSCs and FFs of PM6:BO-4T- and J52:BO-4T-based OSCs. In contrast, the D18:BO-4T blend exhibited the lowest μe of 2.32 × 10−4 cm2 V−1 s−1 and a relatively low μh of 1.33 × 10−4 cm2 V−1 s−1, giving a μe/μh ratio of 2.13, while the PBDB-T:BO-4T blend possessed a relatively high μe of 6.40 × 10−4 cm2 V−1 s−1 but an extremely low μh of 0.25 × 10−4 cm2 V−1 s−1, resulting in the least balanced μe/μh ratio of 25.13, which led to awful JSC and FF values for devices based on D18:BO-4T and PBDB-T:BO-4T.
To further explore the photon-to-electron process for understanding the differences in the device parameters, we studied the relationship between the photocurrent density and effective voltage of the OSCs (Fig. 3f) to explore the bias-dependent exciton-dissociation and charge-collection behaviors. Photocurrent density (Jph) versus effective voltage (Veff) curves were used to evaluate the exciton-dissociation efficiencies (Pdisss) and charge-collection efficiencies (Pcolls) in OSCs.49 The results showed that the OSC based on PM6:BO-4T possessed the highest Pdiss (97.62%) and Pcoll (80.41%), followed by the J52:BO-4T-based device, which was consistent with the high JSC and FF values in the PM6:BO-4T and J52:BO-4T systems. By contrast, the Pdiss and Pcoll of the D18:BO-4T-based OSC were the lowest (94.60% and 71.86%, respectively), which indicated an inefficient charge generation for the lower JSC and FF, and so it was for the PBDB-T:BO-4T system. From the radar plots of six device parameters (Fig. 3g), we could easily identify that the D18, PBDB-T, and J52-based systems have both merits and demerits, while the PM6-based system performed the most comprehensively.
Furthermore, the dependences of JSC and VOC on the light intensity (Plight) were tested to explore the charge recombination in devices. The slopes (n) obtained from the equation VOC ∝ nkT/qln(Plight) could be used as an indicator for identifying the recombination behavior, where a larger n represents a higher proportion of monomolecular recombination.50 It was found that the D18:BO-4T blend exhibited the highest proportion of monomolecular recombination, which may be due to the formation of large phase-separation domains, while PM6:BO-4T could suppress the monomolecular recombination. The relationship between JSC and Plight could be described as JSC ∝ Plightα, where the closer the α value is to 1, the lower a component of bimolecular recombination exists.50 It is worth mentioning that the α of the PM6:BO-4T-based OSC was the highest (0.997), implying the least extent of bimolecular recombination. The recombination situations verified the best performance of the PM6:BO-4T system.
In order to evaluate the photoelectric performance versus the synthetic complexity (SC) of BO-4T-based OSCs, we calculated the figure-of-merit (FOM = PCE/SC) value of BO-4T and compared it with those of some other classic acceptors (Y6, BTP-eC9, IT-4F, ITIC, and DF-PCIC), and the detailed calculation process is listed in the ESI (Fig. S13–S18 and Table S2†). The result showed that BO-4T had the highest FOM owing to its lowest SC, which indicated the potential of BO-4T in the fabrication of OSCs with high efficiency and low cost.
Surface | θ water (°) | θ DIM (°) | γ (mN m−1) | χ D–A |
---|---|---|---|---|
a The Flory–Huggins interaction parameter between the donor and acceptor was calculated through the equation of . | ||||
BO-4T | 94.51 | 47.9 | 57.34 | — |
D18 | 103.65 | 64.53 | 42.59 | 1.09 |
PM6 | 101.09 | 63.26 | 43.03 | 1.03 |
PBDB-T | 103.02 | 61.59 | 45.70 | 0.66 |
J52 | 103.79 | 63.04 | 44.35 | 0.83 |
We then carried out atomic force microscopy (AFM) measurements to investigate the top surface morphological properties of the blend films (Fig. 4b). From the height images, we could find out that the root mean square (RMS) roughness values of the D18:BO-4T and PM6:BO-4T blend films were larger than that of the PBDB-T:BO-4T and J52:BO-4T blend films, which could be attributed to the fluorinated BDT unit enabling D18 and PM6 to have stronger crystallinity, thus resulting in stronger intermolecular aggregation. From the phase images, it could be identified that the PBDB-T:BO-4T and J52:BO-4T blend films showed well-mixed homogeneous surfaces due to the good miscibility between the donor and acceptor, which is conducive to the dissociation process, but with the risk of bimolecular recombination. This was, to some extent, the reason for the low FF of PBDB-T:BO-4T. This risk was also present for J52:BO-4T, but was compensated by the orientation and crystallization, as discussed later. While for D18:BO-4T and PM6:BO-4T films with reduced miscibility between the donor and acceptor, an obvious nanoscale phase-separation structure could be observed. However, relative to the PM6:BO-4T film, the phase separation in the D18:BO-4T film may be too large for mitigating monomolecular recombination and assisting exciton dissociation, thus resulting in the low JSC and FF. Besides, PM6 had suitable miscibility with BO-4T to form suitable phase separation, which was conducive to exciton dissociation and the charge-transfer process, resulting in the best device performance.
Furthermore, GIWAXS characterization was performed to investigate the crystallinity and orientation of the blend films (Fig. 5 and Table S3†).41 All the blend films exhibited dominant (010) diffraction peaks at qz = 1.84 Å−1 (d = 3.40 Å) in the OOP direction, and the differences in π–π stacking distance among them were not significant. However, there were differences in the crystal coherence length (CCL). Among them, PM6:BO-4T and J52:BO-4T possessed relatively larger CCLs (29.2 Å and 29.1 Å, respectively), indicating the better crystallinity, which contributed to their higher FFs. While PBDB-T:BO-4T had the smallest CCL, which was not conducive to charge transport, corresponding to its lowest FF. In the IP direction, the (001) diffraction peaks could be observed at qr = 0.276 Å−1 (d = 22.8 Å) for PM6:BO-4T and J52:BO-4T blends, and the PBDB-T:BO-4T blend was stacked a little closer with the (001) peak at qr = 0.330 Å−1 (d = 19.0 Å). While the D18:BO-4T blend exhibited the largest lamellar spacing with the (001) peak at qr = 0.268 Å−1 (d = 23.4 Å), which may give support to its lowest voltage loss as aforementioned.53 It is noteworthy that the (002) peak, which originally appeared at qr = 0.452 Å−1 (d = 13.9 Å) for the pristine acceptor, could also be found in the blend films, roughly as shown in the second dashed line in Fig. 5b, reflecting that the strong crystallization ability of the BO-4T allowed its stacking characteristics to be preserved to some extent in the blend film. In addition, the above films all exhibited a large proportion of face-on orientation characteristics, which was favorable for the charge transport and could, to some extent, be attributed to the face-on orientation of the BO-4T itself. The above results provide proof that the crystallization and orientation behavior of the active layer can be effectively regulated by the rational structure design of the acceptors and carefully selected polymer donors.
Fig. 5 (a) 2D GIWAXS images of the blend films. (b) GIWAXS intensity profiles of the corresponding films along the in-plane (blue lines) and out-of-plane (red lines) directions. |
Footnotes |
† Electronic supplementary information (ESI) available. CCDC 2223269. For ESI and crystallographic data in CIF or other electronic format see DOI: https://doi.org/10.1039/d2ta09500a |
‡ These authors contributed equally to this work. |
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