Open Access Article
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Correction: Controlling barrier height and spectral responsivity of p–i–n based GeSn photodetectors via arsenic incorporation
Mohamed A. Nawwar*a,
Magdy S. Abo Ghazalaa,
Lobna M. Sharaf El-Deena,
Badawi Anisb,
Abdelhamid El-Shaerc,
Ahmed Mourtada Elsemand,
Mohamed M. Rashadd and
Abd El-hady B. Kashyout*e
aPhysics Department, Faculty of Science, Menoufia University, Menoufia, Shebin El-Koom, 32511, Egypt. E-mail: mohamed.nawwar@science.menofia.edu.eg
bSpectroscopy Department, Physics Research Institute, National Research Centre, 33 El Bohouth St., Dokki, Giza, 12622, Egypt
cPhysics Department, Faculty of Science, Kafrelsheikh University, KafrelSheikh, 33516, Egypt
dElectronic & Magnetic Materials Department, Advanced Materials Institute, Central Metallurgical Research & Development Institute (CMRDI), Helwan-Cairo, 11421, Egypt
eElectronic Materials Department, Advanced Technology and New Materials Research Institute, City of Scientific Research and Technological Applications (SRTA-City), New Borg El-Arab City, Alexandria 21943, Egypt. E-mail: akashyout@srtacity.sci.eg
First published on 11th May 2023
Abstract
Correction for ‘Controlling barrier height and spectral responsivity of p–i–n based GeSn photodetectors via arsenic incorporation’ by Mohamed A. Nawwar et al., RSC Adv., 2023, 13, 9154–9167, https://doi.org/10.1039/D3RA00805C.
The authors regret that the author associations with affiliations were incorrectly shown in the original manuscript. The corrected list of affiliations is as shown above.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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