Open Access Article
Hyejin Rhyuac,
Seonjeong Leea,
Myunghyun Kangb,
Daeho Yoon
c,
Sung Myung
*a,
Wooseok Song
a,
Sun Sook Lee
a and
Jongsun Lim
a
aThin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
bAdvanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
cDepartment of Advanced Material Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
First published on 27th April 2023
The rising importance of gas detection has prompted rigorous research on flexible and transparent high-performance gas sensors. We demonstrated a sensor for NO2 detection at room temperature, in which our device was fabricated via screen printing on a flexible substrate, and MoS2 and single-walled carbon nanotube (SWCNT) were coated on a specific area by the self-assembly method. This fabrication process is rapid, facile, and cost-effective. The proposed sensor enables precise and stable NO2 gas sensing from 50 ppb to 100 ppm. This method should also be applicable to the selective detection of other gases.
For application in electrical devices, MoS2 nanosheets have been synthesized via the exfoliation of bulky MoS2 or chemical vapor deposition through the sulfurization of molybdenum precursors.9–12 Recently, composites of polymers and 2D semiconducting nanostructures, such as those of MoS2, have been synthesized to overcome the sensitivity limitations of 2D TMD-based sensors.13–16 Because 2D carbon-based materials are highly sensitive to gases owing to their intrinsic electrical properties, hybrid layers based on 2D TMDs and graphene with high electron transfer rates and surface-to-volume ratios were utilized to enhance electrochemical and sensing behaviors.17–19
One-dimensional carbon nanostructures such as carbon nanotubes (CNTs), graphene oxide (GO), and reduced graphene oxide (rGO) were explored for application as gas sensors. Carbon-based materials have large surface areas for adsorbing gas molecules and high strength and stability.20–22 In addition, carbon-based materials such as single-walled carbon nanotubes (SWCNTs) were extensively studied as semiconductors for fabricating flexible and sensitive gas sensors, in which SWCNT-based networks are functionalized with polymers, oxide nanoparticles, and other compounds.23–25
NO2, which is emitted by fossil fuel consumption and diesel vehicles, is harmful to both humans and the environment, necessitating its efficient and cost-effective detection.26–29
In this study, NO2 gas sensors were fabricated via the selective assembly of nanostructures on the thermoplastic elastomers styrene-ethylene/butylene-styrene (SEBS) and polyurethane (PU), which are stretchable and intrinsically flexible.30–32 PU has a more hydrophilic surface than SEBS, which causes the MoS2 nanosheets and SWCNTs to selectively assemble on its surface. Therefore, PU patterns with a hydrophilic surface were utilized to assemble millions of MoS2/SWCNT nanosheets over large surface areas, while hydrophobic SEBS patterns were used to prevent any unwanted adsorption on nanostructures. Additionally, the MoS2/SWCNT nanosheets were placed uniformly over the PU surface. A metallic silver electrode was layered on the substrate using screen printing as well. Owing to the wide band gap and flexibility of the MoS2 nanosheets, the flexibility and gas detection performance of the gas sensors were improved through hybridization of the nanosheets with SWCNTs. The MoS2/SWCNT-based sensors exhibited NO2 gas sensitivities of up to 50 ppb at room temperature. As we only used screen printing and selective self-assembly for the fabrication of flexible gas sensors, this approach may lead to the facile industrial-level production of 2D TMD-based devices for practical applications.
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5 and stirred for 24 h at room temperature. The solution was used to fabricate a 120 μm-thick SEBS layer on a polyethylene terephthalate (PET) substrate via bar coating using a 4-side applicator. The applicator can be used to adjust the thickness of SEBS. Further, PU was then dissolved in N,N-dimethylformamide (DMF) in the mass ratio of 1
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4. PU patterns were fabricated on top of the SEBS layer by screen printing using shadow mask and squeeze in Fig. 1(b) and (c). MoS2 and SWCNTs were then spin-coated onto the PU and SEBS layers at 2000 rpm for 30 s in Fig. 1(d). Finally, as indicated in Fig. 1(f), the silver electrode was screen-printed on the PU with a channel of 1000 μm and a length of 100 μm shadow mask and squeeze.
The electrical properties of the sensors were measured using a semiconductor parameter analyzer (Keithley-4200, Keithley Instruments, USA). NO2, CO, H2S, NH3, acetone, and ethanol gases were individually injected into the sensing chamber to analyze the resistance of the sensors toward them; the sensors were placed 2 cm from the gas inlet, and gas-sensing measurements were carried out at room temperature and under 25% relative humidity.
Fig. 2(b) illustrates the XRD spectra of the MoS2 nanosheets; the characteristic peaks of the MoS2 nanosheets were observed at 11.52°, 33.90°, and 56.62°, corresponding to the (002), (100), and (110) planes, respectively. Fig. 2(c) represents the Raman spectra (λexc = 532 nm) displaying the signals for the in-plane vibrational mode (E12g) and out-of-plane vibrational mode (A1g) of MoS2 at 383.02 and 408.14 cm−1, respectively. Fig. 2(d) illustrates the XPS results for Mo 3d and S 2p. For Mo 3d, two strong peaks are located at 229.6 and 232.8 eV, which can be ascribed to Mo 3d5/2 and Mo 3d3/2. The small peak at 226.8 eV was assigned to the S 2s of MoS2. Other observed peaks at 162.4 and 163.6 eV were assigned to S in 2H–MoS2. This confirms the successful synthesis of MoS2.
Fig. 3(a) depicts the SEM images of PU and SEBS after the assembly of MoS2 and the SWCNTs. These results indicate that, upon spin coating, both MoS2 nanosheets and SWCNTs assembled selectively on the PU region, and SWCNTs could not be observed on the hydrophobic SEBS surface. Here, the density of MoS2/SWCNT adhering to the PU surface can be controlled by adjusting the concentration of the MoS2/SWCNT solution. The hydrophilic surface of PU adsorbed MoS2 and SWCNTs, and the hydrophobic SEBS layer repelled SWCNTs. The EDS measurements also confirmed the uniform assembly of MoS2/SWCNT network patterns on the PU substrate (Fig. 3(b)). The MoS2/SWCNT network on PU was composed of O, S, Mo, and C. Finally, a silver layer with a channel of 1000 μm and length of 100 μm was screen-printed on the PU surface. It acts as the conductive metallic layer required to complete the fabrication of the MoS2/SWCNT-based gas sensors. As indicated in the SEM images and EDS analyses of PU and SEBS boundary after the assembly of MoS2 and the SWCNTs, MoS2 nanosheets were assembled on both PU and SEBS, whereas the SWCNTs were observed only on PU (Fig. S1 in ESI†). Additionally, the MoS2/SWCNT assembled on PU was analyzed by using XPS in order to confirm the chemical state and bonding of MoS2/SWCNT in Fig. S2 in ESI.†
Fig. 4(a) shows the response of the sensor to 100 ppm NO2 observed during the two testing cycles at room temperature; the cyclic nature of the response demonstrates the sensor's repeatable gas response and recovery in Fig. S3 in ESI.† It is well-known that, in the presence of MoS2 and SWCNTs, NO2 acts as an electron acceptor while NH3 acts as an electron donor. These results clearly demonstrated the enhanced response of the MoS2/SWCNT system to both NO2 and NH3, in which the resistance of the device decreased with NO2 adsorption and increased with NH3 adsorption. In previous reports, p-type carbon materials, such as graphene or SWCNTs functionalized with n-type MoS2 nanosheets were found to behave as p-type materials. Similarly, the analyses led us to conclude that the proposed MoS2/SWCNT hybrid structure was a p-type semiconductor material. The sensing mechanism of the NO2 gas-sensor MoS2/SWCNT was explained as in previous references. As NO2 gathers a free electron from the MoS2 and SWCNTs, MoS2/SWCNT exhibits p-type semiconductor properties. The two components cause the generation of more holes when hybridized. Hence, when the sensor was exposed to NO2, its resistance decreased and sensitivity increased. We performed a cycling test to evaluate the stability of the gas sensors in Fig. 4(a). The curves exhibited reproducible responses when air and NO2 were injected alternately. The sensor exhibited a sensitivity of 88% to 100 ppm of NO2 at room temperature. The gas sensitivity was calculated as ΔR/Ra = (Rg − Ra)/Ra, where Ra and Rg are the resistances of the sensor to synthetic air and the target gas, respectively.14,33–35
At various NO2 concentrations, the detection limit for NO2 gas ranged from 50 ppb to 1 ppm (Fig. 4(b)). In Fig. 4(b), detection of 50 ppb of NO2 can be regarded as the minimum detection limit of the MoS2/SWCNT gas sensor, with a response value of 4.5%. These results indicate good performance compared to other studies for NO2 gas sensors using MoS2 and graphene hybrid materials in Table S1 in ESI.† When the concentration was increased from 50 ppb to 1 ppm, the response increased proportionally (Fig. 4(c)). As the relationship between concentration and sensitivity was linear, we concluded that the structure of the nanomaterial did not affect the sensing performance; therefore, the proposed fabrication method can be used with any nanoscale material, including nanowires, nanotubes, and nanoparticles. The response of the MoS2/SWCNT-based gas sensor to various other gases (CO, H2S, NH3, acetone vapor, and ethanol vapor) at room temperature was also investigated (Fig. 5). We tested 100 ppm of a specific gas at room temperature in two cycles. The responses to CO, H2S, and NH3 were 2.6%, 7.8%, and 14.8%, respectively, with no response to acetone or ethanol gases in Fig. 5(a)–(e). In contrast to the resistance change caused by NO2, the resistance of the MoS2/SWCNT-based gas sensor to NH3 and H2S gases increased with the adsorption of their molecules. This is because NO2 accepts electrons, whereas NH3 and H2S act as electron donors. The response value of 100 ppm NO2 was 11.3 times that of 100 ppm H2S and 5.9 times that of 100 ppm NH3 (Fig. 5(f)). This substantiates the gas sensor's excellent selectivity to NO2 at room temperature.
As illustrated in Fig. 4, the response of the sensor decreases for NO2 gas. First, the material is exposed to air, and O2 molecules are adsorbed and form O2− ions on the material surface.
| O2 (g) + e− → O2− (ads) |
Upon exposure to the material, NO2 gas becomes NO2− by accepting electrons from the O2− ions.
| NO2 (g) + e− → NO2− (ads) |
| NO2 (g) + O2− (ads) + 2e− → NO2− (ads) + 2O− |
This confirms that the gas-sensing material increased the concentration of holes on the surface of the material. As shown in Fig. 5(c), the transient resistance responses of the sensor to NO2 and NH3 were compared. In contrast to the resistance change caused by NO2, the resistance increased when exposed to NH3 because the MoS2/SWCNT sensor is a p-type semiconductor.
| O2 (g) + e− → O2− (ads) |
| 2NH3 (ads) + 3O2− → N2 (g) + 3H2O + 3e− |
| NH3 (ads) + OH− → NH2 + H2O + e− |
When the MoS2/SWCNT-based sensor was exposed to NH3, following this mechanism, the O species reacted with NH3. Then the electrons were released back to MoS2/SWCNT, causing an increase in the electron concentration in the conduction band of MoS2. The transferred electrons recombined with the carriers, thus decreasing the charge carrier concentration and consequently increasing the electrical resistance.34–36 Therefore, owing to the synergistic actions of MoS2 and SWCNTs, the MoS2/SWCNT-based gas sensor exhibited high sensitivity to NO2 gas.
Footnote |
| † Electronic supplementary information (ESI) available. See DOI: https://doi.org/10.1039/d3ra01183f |
| This journal is © The Royal Society of Chemistry 2023 |