Open Access Article
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Correction: Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems
Seyeong
Yang
a,
Taegyun
Kim
a,
Sunghun
Kim
a,
Daewon
Chung
a,
Tae-Hyeon
Kim
d,
Jung Kyu
Lee
a,
Sungjoon
Kim
b,
Muhammad
Ismail
a,
Chandreswar
Mahata
a,
Sungjun
Kim
*a and
Seongjae
Cho
*c
aDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea. E-mail: sungjun@dongguk.edu
bDepartment of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea
cDepartment of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, South Korea. E-mail: felixcho@ewha.ac.kr
dSchool of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA
First published on 23rd August 2023
Abstract
Correction for ‘Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems’ by Seyeong Yang et al., Nanoscale, 2023, https://doi.org/10.1039/D3NR01930F.
One of the grant numbers given in the original article (2020M3F3A2A01082593) should instead be as follows: 2021M3F3A2A02037889. The acknowledgements of the manuscript should therefore read:
“This research was supported by the National R&D Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT under grants 2021M3F3A2A02037889 and 2021M3F3A2A01037927.”
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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