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Correction: Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems

Seyeong Yang a, Taegyun Kim a, Sunghun Kim a, Daewon Chung a, Tae-Hyeon Kim d, Jung Kyu Lee a, Sungjoon Kim b, Muhammad Ismail a, Chandreswar Mahata a, Sungjun Kim *a and Seongjae Cho *c
aDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea. E-mail: sungjun@dongguk.edu
bDepartment of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea
cDepartment of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, South Korea. E-mail: felixcho@ewha.ac.kr
dSchool of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA

Received 10th August 2023 , Accepted 10th August 2023

First published on 23rd August 2023


Abstract

Correction for ‘Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems’ by Seyeong Yang et al., Nanoscale, 2023, https://doi.org/10.1039/D3NR01930F.


One of the grant numbers given in the original article (2020M3F3A2A01082593) should instead be as follows: 2021M3F3A2A02037889. The acknowledgements of the manuscript should therefore read:

“This research was supported by the National R&D Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT under grants 2021M3F3A2A02037889 and 2021M3F3A2A01037927.”

The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.


This journal is © The Royal Society of Chemistry 2023
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