Two-dimensional HfS2–ZrS2 lateral heterojunction FETs with high rectification and photocurrent

Abstract

Multifunctional devices are an indispensable choice to fulfil the increasing demand for miniaturized and integrated circuit systems. However, bulk material-based devices encounter the challenge of miniaturized all-in-one systems with multiple functions. In this study, we designed a field effect transistor (FET) based on a monolayer HfS₂–ZrS₂ lateral heterojunction. It possesses simultaneous and obvious rectifying behavior and photodetection characteristics in the visible light region, such as the rectification ratio of ∼10¹², photocurrent density of 13.3 nA m⁻¹, responsivity of 57 mA W⁻¹, and extinction ratio of 108. Notably, the rectification ratio of the single-gate FET is larger than that of the dual-gate FET under the negative gate voltage. These results indicate that monolayer lateral heterojunction-based FETs can provide an effective route to integrate rectifying and photodetection functions in single optoelectronic nanodevices.